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A 0.0023 mm ^2/ch. Delta-Encoded, Time-Division Multiplexed Mixed-Signal ECoG Recording Architecture With Stimulus Artifact Suppression

IEEE transactions on biomedical circuits and systems, 2020-04, Vol.14 (2), p.319-331

2020

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A 0.0023 mm[Formula Omitted]/ch. Delta-Encoded, Time-Division Multiplexed Mixed-Signal ECoG Recording Architecture With Stimulus Artifact Suppression

IEEE transactions on biomedical circuits and systems, 2020-04, Vol.14 (2), p.319

2020

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A 0.0023 mm2/ch. Delta-Encoded, Time-Division Multiplexed Mixed-Signal ECoG Recording Architecture with Stimulus Artifact Suppression

IEEE transactions on biomedical circuits and systems, 2019-12, Vol.14 (2), p.319-331

2019

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0.03% tacrolimus ointment applied once or twice daily is more efficacious than 1% hydrocortisone acetate in children with moderate to severe atopic dermatitis: results of a randomized double-blind controlled trial

British journal of dermatology (1951), 2004-03, Vol.150 (3), p.554-562

2004

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0·03% tacrolimus ointment applied once or twice daily is more efficacious than 1% hydrocortisone acetate in children with moderate to severe atopic dermatitis: results of a randomized double-blind controlled trial

British journal of dermatology (1951), 2004-03, Vol.150 (3), p.554-562

2004

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0.075% Epidural Ropivacaine And Bupivacaine Are Clinically Indistinguishable For Labor Analgesia

Anesthesiology (Philadelphia), 2000-04, Vol.2000 (4), p.NA

2000

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The 0.1-100 keV spectrum and variability of Mrk 421 in a high state

Monthly notices of the Royal Astronomical Society, 2000-02, Vol.312 (1), p.123-129

2000

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The 0.1–100 keV spectrum and variability of Mrk 421 in a high state

Monthly notices of the Royal Astronomical Society, 2000-02, Vol.312 (1), p.123-129

2000

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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8)

2016

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0.1-micron gate-length pseudomorphic HEMT's

IEEE electron device letters, 1987-10, Vol.EDL-8, p.489-491

1987

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0.1 micron Schottky-collector AlAs/GaAs resonant tunneling diodes

IEEE electron device letters, 1994-08, Vol.15 (8), p.295-297

1994

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0.1-mu m Gate-length pseudomorphic HEMT' s

IEEE electron device letters, 1987-10, Vol.8 (10), p.489-491

1987

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0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodes

IEEE electron device letters, 1994-08, Vol.15 (8), p.295-297

1994

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0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

IEEE electron device letters, 2015-05, Vol.36 (5), p.442-444

2015

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0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3076-3083

2016

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0.1-μm gate-length pseudomorphic HEMT's

IEEE electron device letters, 1987, Vol.8 (10), p.489-491

1987

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0.2 Micron length T-shaped gate fabrication using angle evaporation

IEEE electron device letters, 1983-04, Vol.4 (4), p.122-124

1983

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0.248/spl mu/m/sup 2/ and 0.334/spl mu/m/sup 2/ conventional bulk 6T-SRAM bit-cells for 45nm node low cost - general purpose applications

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.130-131

2005

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A 0.25-micron gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

IEEE electron device letters, 1989-10, Vol.10, p.437-439

1989

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A 0.25-mu m gate-length pseudomorphic HFET with 32-mW output powerat 94 GHz

IEEE electron device letters, 1989-10, Vol.10 (10), p.437-439

1989

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A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

IEEE electron device letters, 1989-10, Vol.10 (10), p.437-439

1989

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0.525/spl mu/m/sup 2/ 6T-SRAM bit cell using 45nm fully-depleted SOI CMOS technology with metal gate, high k dielectric and elevated source/drain on 300mm wafers

2005 IEEE International SOI Conference Proceedings, 2005, p.221-222

2005

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0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 mu m

Electronics letters, 2004-01, Vol.40 (1), p.1-1

2004

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0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm

Electronics letters, 2004-01, Vol.40 (1), p.1

2004

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The 0.7 to 3.3 megabase chromosomes from Candida, Kluyveromyces, and Pichia provide accurate size standards for pulsed field gel electrophoresis: Changing directions in electrophoresis

Electrophoresis, 1993, Vol.14 (4), p.290-295

1993

Volltextzugriff (PDF)

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A 0.0023 mm ^2/ch. Delta-Encoded, Time-Division Multiplexed Mixed-Signal ECoG Recording Architecture With Stimulus Artifact Suppression

A 0.0023 mm[Formula Omitted]/ch. Delta-Encoded, Time-Division Multiplexed Mixed-Signal ECoG Recording Architecture With Stimulus Artifact Suppression

A 0.0023 mm2/ch. Delta-Encoded, Time-Division Multiplexed Mixed-Signal ECoG Recording Architecture with Stimulus Artifact Suppression

0.03% tacrolimus ointment applied once or twice daily is more efficacious than 1% hydrocortisone acetate in children with moderate to severe atopic dermatitis: results of a randomized double-blind controlled trial

0·03% tacrolimus ointment applied once or twice daily is more efficacious than 1% hydrocortisone acetate in children with moderate to severe atopic dermatitis: results of a randomized double-blind controlled trial

0.075% Epidural Ropivacaine And Bupivacaine Are Clinically Indistinguishable For Labor Analgesia

The 0.1-100 keV spectrum and variability of Mrk 421 in a high state

The 0.1–100 keV spectrum and variability of Mrk 421 in a high state

0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0.1-micron gate-length pseudomorphic HEMT's

0.1 micron Schottky-collector AlAs/GaAs resonant tunneling diodes

0.1-mu m Gate-length pseudomorphic HEMT' s

0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodes

0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0.1-μm gate-length pseudomorphic HEMT's

0.2 Micron length T-shaped gate fabrication using angle evaporation

0.248/spl mu/m/sup 2/ and 0.334/spl mu/m/sup 2/ conventional bulk 6T-SRAM bit-cells for 45nm node low cost - general purpose applications

A 0.25-micron gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

A 0.25-mu m gate-length pseudomorphic HFET with 32-mW output powerat 94 GHz

A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz

0.525/spl mu/m/sup 2/ 6T-SRAM bit cell using 45nm fully-depleted SOI CMOS technology with metal gate, high k dielectric and elevated source/drain on 300mm wafers

0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 mu m

0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm

The 0.7 to 3.3 megabase chromosomes from Candida, Kluyveromyces, and Pichia provide accurate size standards for pulsed field gel electrophoresis: Changing directions in electrophoresis

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