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IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-10
2020
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Next generation ferroelectric materials for semiconductor process integration and their applications
2021
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Journal of applied physics, 2018-05, Vol.123 (20)
2018
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Applied physics letters, 2022-01, Vol.120 (4)
2022
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Applied physics letters, 2022-01, Vol.120 (2)
2022
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Reports on progress in physics, 2020-08, Vol.83 (8), p.86501-086501
2020
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Electronics letters, 2020-10, Vol.56 (21), p.1108-1110
2020
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Applied physics letters, 2022-03, Vol.120 (12)
2022
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Applied physics letters, 2021-02, Vol.118 (6)
2021
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Semiconductor science and technology, 2014-10, Vol.29 (10)
2014
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Negative capacitance devices: sensitivity analyses of the developed TCAD ferroelectric model for HZO
2022
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IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2108-2114
2022
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2022 Device Research Conference (DRC), 2022, p.1-2
2022
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IEEE journal of the Electron Devices Society, 2022, Vol.10, p.593-599
2022
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2023 35th International Conference on Microelectronic Test Structure (ICMTS), 2023, p.1-6
2023
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2019 Device Research Conference (DRC), 2019, p.97-98
2019
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Solid-state electronics, 2012-06, Vol.72, p.73-77
2012
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Microelectronic engineering, 2011-07, Vol.88 (7), p.1148-1151
2011
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ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.255-258
2021
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ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.340-343
2022
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2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF), and Piezoelectric Force Microscopy Workshop (PFM), 2015, p.233-236
2015
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2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.19.7.1-19.7.4
2017
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Journal of electron spectroscopy and related phenomena, 2015-07, Vol.202, p.122-127
2015
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Ferroelectrics, 2016-06, Vol.497 (1), p.42-51
2016
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