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High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors

IEEE electron device letters, 2008-05, Vol.29 (5), p.515-517

2008

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Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3097-3105

2009

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Off-state modulation of SOI floating-body

IEEE electron device letters, 2006-07, Vol.27 (7), p.588-590

2006

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Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs

IEEE electron device letters, 2006-04, Vol.27 (4), p.288-290

2006

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Stress induced defects and transistor leakage for shallow trench isolated SOI

IEEE electron device letters, 1999-05, Vol.20 (5), p.248-250

1999

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Stable SRAM cell design for the 32 nm node and beyond

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.128-129

2005

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A continuous compact MOSFET model for fully- and partially-depleted SOI devices

IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.821-825

1998

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Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.152-153

2010

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High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Study of hypernuclei by associated production

Physical review letters, 1991-05, Vol.66 (20), p.2585-2588

1991

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Measurement of Silicon Nanowires Carrier Mobility and Its Size Dependence

2008 Device Research Conference, 2008, p.189-190

2008

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Upside-down FETS

2008 IEEE International SOI Conference, 2008, p.23-24

2008

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DC and transient characterization of a compact Schottky body contact technology for SOI transistors

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1451-1456

1999

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Parasitic bipolar gain reduction and the optimization of 0.25-μm partially depleted SOI MOSFETs

IEEE transactions on electron devices, 1999-11, Vol.46 (11), p.2201-2209

1999

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LOCOS-induced stress effects on thin-film SOI devices

IEEE transactions on electron devices, 1997-04, Vol.44 (4), p.646-650

1997

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Parasitic bipolar gain reduction and the optimization of 0.25-/spl mu/m partially depleted SOI MOSFETs

IEEE transactions on electron devices, 1999-11, Vol.46 (11), p.2201-2209

1999

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Transient measurements of SOI body contact effectiveness

IEEE electron device letters, 1998-12, Vol.19 (12), p.499-501

1998

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Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths

2005 IEEE International SOI Conference Proceedings, 2005, p.178-179

2005

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Challenges and Opportunities for High Performance 32 nm CMOS Technology

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Extrapolation of DC device lifetime in body-floating and body-grounded SOI MOSFETS

1997 IEEE International SOI Conference Proceedings, 1997, p.178-179

1997

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Power-Gating Schemes for Ultra-Thin SOI (UTSOI) Circuits in Hybrid SOI-Epitaxial CMOS Structures

2006 International Symposium on VLSI Design, Automation and Test, 2006, p.1-2

2006

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Chapter 11 - Electronic transport properties of quantum dots

Nanostructured Materials and Nanotechnology, 2002, p.445-482

2002

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Mainstreaming of the SOI technology

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), 1999, p.1-4

1999

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Chapter 2 - Electronic transport properties of quantum dots

Handbook of Nanostructured Materials and Nanotechnology, Five-Volume Set, 2000, p.93-130

2000

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A continuous compact MOSFET model for SOI with automatic transitions between fully and partially depleted device behavior

International Electron Devices Meeting. Technical Digest, 1996, p.143-146

1996

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High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors

Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs

Off-state modulation of SOI floating-body

Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs

Stress induced defects and transistor leakage for shallow trench isolated SOI

Stable SRAM cell design for the 32 nm node and beyond

A continuous compact MOSFET model for fully- and partially-depleted SOI devices

Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Study of hypernuclei by associated production

Measurement of Silicon Nanowires Carrier Mobility and Its Size Dependence

Upside-down FETS

DC and transient characterization of a compact Schottky body contact technology for SOI transistors

Parasitic bipolar gain reduction and the optimization of 0.25-μm partially depleted SOI MOSFETs

LOCOS-induced stress effects on thin-film SOI devices

Parasitic bipolar gain reduction and the optimization of 0.25-/spl mu/m partially depleted SOI MOSFETs

Transient measurements of SOI body contact effectiveness

Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths

Challenges and Opportunities for High Performance 32 nm CMOS Technology

Extrapolation of DC device lifetime in body-floating and body-grounded SOI MOSFETS

Power-Gating Schemes for Ultra-Thin SOI (UTSOI) Circuits in Hybrid SOI-Epitaxial CMOS Structures

Chapter 11 - Electronic transport properties of quantum dots

Mainstreaming of the SOI technology

Chapter 2 - Electronic transport properties of quantum dots

A continuous compact MOSFET model for SOI with automatic transitions between fully and partially depleted device behavior

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