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Environmental radiation impact on lifetimes and quasiparticle tunneling rates of fixed-frequency transmon qubits

Applied physics letters, 2022-02, Vol.120 (7)

2022

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Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs

IEEE electron device letters, 2006-04, Vol.27 (4), p.288-290

2006

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A continuous compact MOSFET model for fully- and partially-depleted SOI devices

IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.821-825

1998

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Anisotropic capillary instability of silicon nanostructures under hydrogen anneal

Applied physics letters, 2012-02, Vol.100 (9), p.093109-093109-3

2012

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Microfabrication of a mechanically controllable break junction in silicon

Applied physics letters, 1995-08, Vol.67 (8), p.1160-1162

1995

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Study of hypernuclei by associated production

Physical review letters, 1991-05, Vol.66 (20), p.2585-2588

1991

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Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

2010 Symposium on VLSI Technology, 2010, p.21-22

2010

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Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells

Physical review letters, 1996-02, Vol.76 (8), p.1328-1331

1996

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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

IEEE electron device letters, 2013-06, Vol.34 (6), p.723-725

2013

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Gate-all-around silicon nanowire MOSFETs and circuits

68th Device Research Conference, 2010, p.269-272

2010

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Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter

68th Device Research Conference, 2010, p.277-278

2010

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Precision, Double XTEM Sample Preparation of Site Specific Si Nanowires

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.330-331

2009

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Low-dimensional resonant tunnelling and Coulomb blockade: a comparison of fabricated versus impurity confinement

Semiconductor science and technology, 1994-11, Vol.9 (11S), p.1919-1924

1994

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High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors

IEEE electron device letters, 2008-05, Vol.29 (5), p.515-517

2008

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Stress induced defects and transistor leakage for shallow trench isolated SOI

IEEE electron device letters, 1999-05, Vol.20 (5), p.248-250

1999

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Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3097-3105

2009

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Stable SRAM cell design for the 32 nm node and beyond

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.128-129

2005

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Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

2013 IEEE International Electron Devices Meeting, 2013, p.20.2.1-20.2.4

2013

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DC and transient characterization of a compact Schottky body contact technology for SOI transistors

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1451-1456

1999

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LOCOS-induced stress effects on thin-film SOI devices

IEEE transactions on electron devices, 1997-04, Vol.44 (4), p.646-650

1997

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Energy-averaged weak localization in chaotic microcavities

Physical review. B, Condensed matter, 1996-01, Vol.53 (4), p.R1693-R1696

1996

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The association between intraoperative electroencephalogram-based measures and pain severity in the post-anaesthesia care unit

Anaesthesia and intensive care, 2011-09, Vol.39 (5), p.875-880

2011

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Off-state modulation of SOI floating-body

IEEE electron device letters, 2006-07, Vol.27 (7), p.588-590

2006

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Transient measurements of SOI body contact effectiveness

IEEE electron device letters, 1998-12, Vol.19 (12), p.499-501

1998

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High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions

2013 Symposium on VLSI Technology, 2013, p.T18-T19

2013

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Environmental radiation impact on lifetimes and quasiparticle tunneling rates of fixed-frequency transmon qubits

Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs

A continuous compact MOSFET model for fully- and partially-depleted SOI devices

Anisotropic capillary instability of silicon nanostructures under hydrogen anneal

Microfabrication of a mechanically controllable break junction in silicon

Study of hypernuclei by associated production

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Gate-all-around silicon nanowire MOSFETs and circuits

Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter

Precision, Double XTEM Sample Preparation of Site Specific Si Nanowires

Low-dimensional resonant tunnelling and Coulomb blockade: a comparison of fabricated versus impurity confinement

High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors

Stress induced defects and transistor leakage for shallow trench isolated SOI

Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs

Stable SRAM cell design for the 32 nm node and beyond

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

DC and transient characterization of a compact Schottky body contact technology for SOI transistors

LOCOS-induced stress effects on thin-film SOI devices

Energy-averaged weak localization in chaotic microcavities

The association between intraoperative electroencephalogram-based measures and pain severity in the post-anaesthesia care unit

Off-state modulation of SOI floating-body

Transient measurements of SOI body contact effectiveness

High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions

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