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Electrical properties of SiO2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Applied surface science, 2016-02, Vol.364, p.892-895

2016

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Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Journal of applied physics, 2016-11, Vol.120 (20)

2016

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Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Semiconductors (Woodbury, N.Y.), 2016, Vol.50 (1), p.103-105

2016

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Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors

Materials science forum, 2019-07, Vol.963, p.763-767, Article 763

2019

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Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers

Applied surface science, 2016-02, Vol.364, p.892-895

2016

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Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.347-350, Article 347

2015

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Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

Materials Science Forum, 2016-05, Vol.858, p.663-666

2016

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Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

Materials science forum, 2014, Vol.778-780, p.575-578

2014

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Specific features of the current-voltage characteristics of Si[O.sub.2]/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Semiconductors (Woodbury, N.Y.), 2016-01, Vol.50 (1), p.103

2016

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On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and Si[O.sub.2] produced by thermal oxidation in dry oxygen

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1581

2014

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On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1581-1585

2014

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Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

Materials science forum, 2014, Vol.778-780, p.261-264

2014

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Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Semiconductors (Woodbury, N.Y.), 2016-01, Vol.50 (1)

2016

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Strasbourg

Revue des sciences sociales de la France de l'Est, 1991, Vol.19 (1), p.12

Steger, Hanns-Albert

1991

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Sensitive detection of colorectal cancer in peripheral blood by septin 9 DNA methylation assay

PloS one, 2008-11, Vol.3 (11), p.e3759-e3759

2008

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Aberrant septin 9 DNA methylation in colorectal cancer is restricted to a single CpG island

BMC cancer, 2013-08, Vol.13 (1), p.398-398, Article 398

2013

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Circulating Methylated SEPT9 DNA in Plasma Is a Biomarker for Colorectal Cancer

Clinical chemistry (Baltimore, Md.), 2009-07, Vol.55 (7), p.1337-1346

2009

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DNA Methylation Biomarkers for Blood-Based Colorectal Cancer Screening

Clinical chemistry (Baltimore, Md.), 2008-02, Vol.54 (2), p.414-423

2008

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Fatigue assessment for selected connections of structural steel bridge components using the finite elements method

AIP Conference Proceedings, 2018, Vol.1922 (1)

2018

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Impact of Video Modeling and Scenario-Based Learning on Work Readiness for Transition-Age Students With Disabilities

The American journal of occupational therapy, 2021-08, Vol.75 (Supplement_2), p.7512520375-7512520375p1

2021

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SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study

Materials science forum, 2020-07, Vol.1004, p.850-855

2020

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Influence of Corrugated Web Geometry on Mechanical Properties of I-Beam: Laboratory Tests

Materials, 2021-12, Vol.15 (1), p.277

2021

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Finite Element Analysis of the Stability of a Sinusoidal Web in Steel and Composite Steel‑Concrete Girders

Materials, 2020-02, Vol.13 (5), p.1041

2020

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Electrical properties of SiO2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors

Electrical properties of SiO2/SiC interfaces on 2 degree -off axis 4H-SiC epilayers

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

Specific features of the current-voltage characteristics of Si[O.sub.2]/4H-SiC MIS structures with phosphorus implanted into silicon carbide

On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and Si[O.sub.2] produced by thermal oxidation in dry oxygen

On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Définition des populations cibles des médicaments : comment anticiper au mieux la définition des populations cibles en vue du remboursement ?

How to Best Define Target Populations of Medicines in View of Their Coverage by the National Health Insurance Scheme?

Strasbourg

Sensitive detection of colorectal cancer in peripheral blood by septin 9 DNA methylation assay

Aberrant septin 9 DNA methylation in colorectal cancer is restricted to a single CpG island

Circulating Methylated SEPT9 DNA in Plasma Is a Biomarker for Colorectal Cancer

DNA Methylation Biomarkers for Blood-Based Colorectal Cancer Screening

Fatigue assessment for selected connections of structural steel bridge components using the finite elements method

Impact of Video Modeling and Scenario-Based Learning on Work Readiness for Transition-Age Students With Disabilities

SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study

Influence of Corrugated Web Geometry on Mechanical Properties of I-Beam: Laboratory Tests

Finite Element Analysis of the Stability of a Sinusoidal Web in Steel and Composite Steel‑Concrete Girders

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