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Stack of two III-nitride laser diodes interconnected by a tunnel junction

Optics express, 2019-02, Vol.27 (4), p.5784-5791

2019

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GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Optical and quantum electronics, 2022, Vol.54 (1), Article 62

2022

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Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Optics express, 2022-07, Vol.30 (15), p.27004-27014

2022

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Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Journal of physics. D, Applied physics, 2014-02, Vol.47 (7), p.1-18

2014

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Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Optics express, 2021-01, Vol.29 (2), p.1824-1837

2021

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III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA0801

2022

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Stacking faults in plastically relaxed InGaN epilayers

Semiconductor science and technology, 2020-03, Vol.35 (3), p.34003

2020

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Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Optics express, 2020-11, Vol.28 (23), p.35321-35329

2020

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of applied physics, 2010, Vol.107 (2), p.024504-024504-4

2010

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Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Journal of crystal growth, 2013-03, Vol.367, p.115-121

2013

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Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2017-02, Vol.459, p.129-134

2017

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Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2017-05, Vol.465, p.43-47

2017

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The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

Applied physics letters, 2011-06, Vol.98 (23), p.231902-231902-3

2011

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Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Applied physics letters, 2012-04, Vol.100 (18), p.181603-181603-4

2012

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Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Journal of crystal growth, 2009-03, Vol.311 (7), p.1632-1639

2009

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Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Applied physics. A, Materials science & processing, 2014-06, Vol.115 (3), p.1015-1023

2014

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Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

Materials science in semiconductor processing, 2019-03, Vol.91, p.387-391

2019

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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Journal of crystal growth, 2016-12, Vol.456, p.73-79

2016

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Determination of gain in AlGaN cladding free nitride laser diodes

Applied physics letters, 2013-08, Vol.103 (6)

2013

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Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Journal of applied physics, 2011-09, Vol.110 (6), p.063110-063110-7

2011

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MBE fabrication of III-N-based laser diodes and its development to industrial system

Journal of crystal growth, 2013-09, Vol.378, p.278-282

2013

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Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

Applied physics letters, 2013-07, Vol.103 (5)

2013

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Stack of two III-nitride laser diodes interconnected by a tunnel junction

GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Stacking faults in plastically relaxed InGaN epilayers

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy

Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy

The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Determination of gain in AlGaN cladding free nitride laser diodes

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

MBE fabrication of III-N-based laser diodes and its development to industrial system

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

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