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A remote monitoring-enabled home exercise prescription for patients with interstitial lung disease at risk for exercise-induced desaturation

Respiratory medicine, 2023-11, Vol.218, p.107397-107397, Article 107397

2023

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Deep level near E(C) - 0.55 ev in undoped 4H-SiC substrates

Materials science forum, 2006-01, Vol.527-529, p.505-508

2006

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As-doped p-type ZnO produced by an evaporation∕sputtering process

Applied physics letters, 2004-11, Vol.85 (22), p.5269-5271

2004

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Radiation hardness of ZnO at low temperatures

Semiconductor science and technology, 2004-06, Vol.19 (6), p.752-754

2004

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Characterization of multiple carriers in GaN using variable magnetic-field Hall measurements

Journal of electronic materials, 2004-05, Vol.33 (5), p.412-417

2004

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On the nitrogen vacancy in GaN

Applied physics letters, 2003-10, Vol.83 (17), p.3525-3527

2003

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The path to ZnO devices: donor and acceptor dynamics

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.171-177

2003

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The path to ZnO devices: donor and acceptor dynamics

Physica status solidi. C, 2003-01 (3), p.171-177

2003

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Electrical, Optical, Structural, and Analytical Properties of Very Pure GaN

MRS proceedings, 2002, Vol.743, Article L10.1

2002

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Predicted maximum mobility in bulk GaN

Applied physics letters, 2001-08, Vol.79 (8), p.1133-1135

2001

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Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2

Journal of crystal growth, 1999-12, Vol.207 (4), p.255-265

1999

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Point defect characterization of GaN and ZnO

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.30-32

1999

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Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb 1 and Sb 2

Journal of crystal growth, 1999-12, Vol.207 (4), p.255-265

1999

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Production and annealing of electron irradiation damage in ZnO

Applied physics letters, 1999-08, Vol.75 (6), p.811-813

1999

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Residual Native Shallow Donor in ZnO

Physical review letters, 1999-03, Vol.82 (12), p.2552-2555

1999

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Dislocation Scattering in GaN

Physical review letters, 1999-02, Vol.82 (6), p.1237-1240

1999

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Electrical properties of bulk ZnO

Solid state communications, 1998-02, Vol.105 (6), p.399-401

1998

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Defect Donor and Acceptor in GaN

Physical review letters, 1997-09, Vol.79 (12), p.2273-2276

1997

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Accurate mobility and carrier concentration analysis for GaN

Solid state communications, 1997-04, Vol.102 (4), p.297-300

1997

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Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs

Solid-state electronics, 1996-09, Vol.39 (9), p.1398-1400

1996

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On Hall scattering factors for holes in GaAs

Journal of applied physics, 1996-08, Vol.80 (3), p.1913-1915

1996

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Accurate measurement of capture cross sections in deep level transient spectroscopy : application to EL2 in GaAs

Journal of electronic materials, 1995-10, Vol.24 (10), p.1461-1464

1995

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Depletion width and capacitance transient formulas for deep traps of high concentration

Journal of applied physics, 1995-08, Vol.78 (4), p.2848-2850

1995

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Convenient determination of concentration and energy in deep-level transient spectroscopy

Journal of applied physics, 1995-02, Vol.77 (4), p.1407-1410

1995

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Monte Carlo simulation of bulk hole transport in Al x Ga1− x As, In1− x Al x As, and GaAs x Sb1− x

Journal of applied physics, 1995-01, Vol.77 (2), p.661-664

1995

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A remote monitoring-enabled home exercise prescription for patients with interstitial lung disease at risk for exercise-induced desaturation

Deep level near E(C) - 0.55 ev in undoped 4H-SiC substrates

As-doped p-type ZnO produced by an evaporation∕sputtering process

Radiation hardness of ZnO at low temperatures

Characterization of multiple carriers in GaN using variable magnetic-field Hall measurements

On the nitrogen vacancy in GaN

The path to ZnO devices: donor and acceptor dynamics

The path to ZnO devices: donor and acceptor dynamics

Electrical, Optical, Structural, and Analytical Properties of Very Pure GaN

Predicted maximum mobility in bulk GaN

Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2

Point defect characterization of GaN and ZnO

Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb 1 and Sb 2

Production and annealing of electron irradiation damage in ZnO

Residual Native Shallow Donor in ZnO

Dislocation Scattering in GaN

Electrical properties of bulk ZnO

Defect Donor and Acceptor in GaN

Accurate mobility and carrier concentration analysis for GaN

Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs

On Hall scattering factors for holes in GaAs

Accurate measurement of capture cross sections in deep level transient spectroscopy : application to EL2 in GaAs

Depletion width and capacitance transient formulas for deep traps of high concentration

Convenient determination of concentration and energy in deep-level transient spectroscopy

Monte Carlo simulation of bulk hole transport in Al x Ga1− x As, In1− x Al x As, and GaAs x Sb1− x

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