UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Radiation hardness of ZnO at low temperatures

Semiconductor science and technology, 2004-06, Vol.19 (6), p.752-754

2004

Volltextzugriff (PDF)

The path to ZnO devices: donor and acceptor dynamics

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.171-177

2003

Volltextzugriff (PDF)

As-doped p-type ZnO produced by an evaporation∕sputtering process

Applied physics letters, 2004-11, Vol.85 (22), p.5269-5271

2004

Volltextzugriff (PDF)

Electrical properties of bulk ZnO

Solid state communications, 1998-02, Vol.105 (6), p.399-401

1998

Volltextzugriff (PDF)

Production and annealing of electron irradiation damage in ZnO

Applied physics letters, 1999-08, Vol.75 (6), p.811-813

1999

Volltextzugriff (PDF)

On the nitrogen vacancy in GaN

Applied physics letters, 2003-10, Vol.83 (17), p.3525-3527

2003

Volltextzugriff (PDF)

Predicted maximum mobility in bulk GaN

Applied physics letters, 2001-08, Vol.79 (8), p.1133-1135

2001

Volltextzugriff (PDF)

Characterization of multiple carriers in GaN using variable magnetic-field Hall measurements

Journal of electronic materials, 2004-05, Vol.33 (5), p.412-417

2004

Volltextzugriff (PDF)

Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C

Journal of applied physics, 1993-07, Vol.74 (1), p.306-310

1993

Volltextzugriff (PDF)

Residual Native Shallow Donor in ZnO

Physical review letters, 1999-03, Vol.82 (12), p.2552-2555

1999

Volltextzugriff (PDF)

Dislocation Scattering in GaN

Physical review letters, 1999-02, Vol.82 (6), p.1237-1240

1999

Volltextzugriff (PDF)

Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400°C

Applied physics letters, 1993-06, Vol.62 (23), p.3004-3006

1993

Volltextzugriff (PDF)

Accurate mobility and carrier concentration analysis for GaN

Solid state communications, 1997-04, Vol.102 (4), p.297-300

1997

Volltextzugriff (PDF)

Alloy scattering in p-type AlxGa1-xAs

Journal of applied physics, 1992, Vol.71 (1), p.260-266

1992

Volltextzugriff (PDF)

New AsGa related center in GaAs

Physical review letters, 1993-01, Vol.70 (4), p.465-468

1993

Volltextzugriff (PDF)

Point defect characterization of GaN and ZnO

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.30-32

1999

Volltextzugriff (PDF)

Shifted x-ray photoelectron peak in molecular beam epitaxial GaAs grown at 200°C

Applied physics letters, 1992-09, Vol.61 (11), p.1329-1331

1992

Volltextzugriff (PDF)

Defect Donor and Acceptor in GaN

Physical review letters, 1997-09, Vol.79 (12), p.2273-2276

1997

Volltextzugriff (PDF)

Defect production in electron-irradiated, n-type GaAs

Journal of applied physics, 1987-11, Vol.62 (9), p.3660-3664

1987

Volltextzugriff (PDF)

Photoluminescence of GaAs-related 1.32 eV emission in bulk GaAs

Semiconductor science and technology, 1992-04, Vol.7 (4), p.556-561

1992

Volltextzugriff (PDF)

On Hall scattering factors for holes in GaAs

Journal of applied physics, 1996-08, Vol.80 (3), p.1913-1915

1996

Volltextzugriff (PDF)

Semiconducting/semi-insulating reversibility in bulk GaAs

Applied physics letters, 1986-10, Vol.49 (17), p.1083-1085

1986

Volltextzugriff (PDF)

Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures

Journal of applied physics, 1994-07, Vol.76 (2), p.1029-1032

1994

Volltextzugriff (PDF)

Hopping Conduction in Molecular Beam Epitaxial GaAs Grown at Very Low Temperatures

Journal of the Electrochemical Society, 1994-03, Vol.141 (3), p.747-750

1994

Volltextzugriff (PDF)

Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs : hopping in a dense EL2-like band

Physical review. B, Condensed matter, 1990-08, Vol.42 (6), p.3578-3581

1990

Volltextzugriff (PDF)

1 – 25 von 65

Menü

Weitere Dienste

Einstellungen

Radiation hardness of ZnO at low temperatures

The path to ZnO devices: donor and acceptor dynamics

As-doped p-type ZnO produced by an evaporation∕sputtering process

Electrical properties of bulk ZnO

Production and annealing of electron irradiation damage in ZnO

On the nitrogen vacancy in GaN

Predicted maximum mobility in bulk GaN

Characterization of multiple carriers in GaN using variable magnetic-field Hall measurements

Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C

Residual Native Shallow Donor in ZnO

Dislocation Scattering in GaN

Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400°C

Accurate mobility and carrier concentration analysis for GaN

Alloy scattering in p-type AlxGa1-xAs

New AsGa related center in GaAs

Point defect characterization of GaN and ZnO

Shifted x-ray photoelectron peak in molecular beam epitaxial GaAs grown at 200°C

Defect Donor and Acceptor in GaN

Defect production in electron-irradiated, n-type GaAs

Photoluminescence of GaAs-related 1.32 eV emission in bulk GaAs

On Hall scattering factors for holes in GaAs

Semiconducting/semi-insulating reversibility in bulk GaAs

Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures

Hopping Conduction in Molecular Beam Epitaxial GaAs Grown at Very Low Temperatures

Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs : hopping in a dense EL2-like band

Suchergebnisse filtern