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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Applied physics letters, 2008-03, Vol.92 (9)

2008

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Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Applied physics letters, 2007-08, Vol.91 (6)

2007

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Investigating the Potential of Capric Acid as Phase Change Material by Simulating its Consequence on the Thermal Performance of Building with Diverse Wall Materials

International journal of engineering trends and technology, 2021-07, Vol.69 (7), p.132-142

2021

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Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon

Applied physics letters, 2006-03, Vol.88 (11), p.112907-112907-3

2006

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Exploring the potential of fly ash cenosphere—capric acid composite phase change material in concrete incorporating supplementary cementitious material

Structural concrete : journal of the FIB, 2024-05

2024

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Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)

Applied physics letters, 2005-05, Vol.86 (20)

2005

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Deposition of Hf–silicate gate dielectric on SixGe1−x(100): Detection of interfacial layer growth

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-05, Vol.22 (3), p.616-623

2004

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Impact of ozone concentration on atomic layer deposited HfO 2 on GaAs

Microelectronic engineering, 2012, Vol.89, p.80-83

2012

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Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)

Journal of applied physics, 2007-06, Vol.101 (11), p.114108-114108-4

2007

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The electrical properties and stability of the hafnium Silicate/Si0.8Ge0.2(100) interface

Journal of electronic materials, 2004-09, Vol.33 (9), p.1016-1021

2004

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Impact of ozone concentration on atomic layer deposited HfO2 on GaAs

Microelectronic engineering, 2012-01, Vol.89, p.80-83

2012

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Impact of ozone concentration on atomic layer deposited HfO sub(2) on GaAs

Microelectronic engineering, 2012-01, Vol.89, p.80-83

2012

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Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)

Applied physics letters, 2006-10, Vol.89 (15), p.152903-152903-3

2006

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Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

Applied physics letters, 2008-11, Vol.93 (19), p.192115-192115-3

2008

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Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

2009 Symposium on VLSI Technology, 2009, p.34-35

2009

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Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

2007 IEEE Symposium on VLSI Technology, 2007, p.68-69

2007

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Higher permittivity rare earth doped Hf O 2 for sub- 45 - nm metal-insulator-semiconductor devices

Applied physics letters, 2007-08, Vol.91 (6), p.062906-062906-3

2007

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Impact of ozone concentration on atomic layer deposited Hf02 on GaAs

Microelectronic engineering, 2012, Vol.89, p.80-83

2012

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Thermal stability of lanthanum scandate dielectrics on Si(100)

Applied physics letters, 2006-12, Vol.89 (24), p.242907-242907-3

2006

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Dipole model explaining high- k /metal gate field effect transistorthreshold voltage tuning

Applied physics letters, 2008-03, Vol.92 (9), p.092901-092901-3

2008

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Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning

ECS transactions, 2009, Vol.19 (1), p.269-276

2009

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Outdiffusion of La and Al from amorphous LaAlO 3 in direct contactwith Si (001)

Applied physics letters, 2005-05, Vol.86 (20), p.201901-201901-3

2005

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The Electrical Properties and Stability of the Hafnium Silicate/Si^sub 0.8^Ge^sub 0.2^(100) Interface

Journal of electronic materials, 2004-09, Vol.33 (9), p.1016

2004

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The electrical properties and stability of the hafnium silicate/SiO.8Ge0.2(100) interface

Journal of electronic materials, 2004-09, Vol.33 (9), p.1016-1021

2004

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Deposition of Hf–silicate gate dielectric on Si x Ge 1−x (100): Detection of interfacial layer growth

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-05, Vol.22 (3), p.616-623

2004

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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Investigating the Potential of Capric Acid as Phase Change Material by Simulating its Consequence on the Thermal Performance of Building with Diverse Wall Materials

Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon

Exploring the potential of fly ash cenosphere—capric acid composite phase change material in concrete incorporating supplementary cementitious material

Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)

Deposition of Hf–silicate gate dielectric on SixGe1−x(100): Detection of interfacial layer growth

Impact of ozone concentration on atomic layer deposited HfO 2 on GaAs

Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)

The electrical properties and stability of the hafnium Silicate/Si0.8Ge0.2(100) interface

Impact of ozone concentration on atomic layer deposited HfO2 on GaAs

Impact of ozone concentration on atomic layer deposited HfO sub(2) on GaAs

Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)

Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

Higher permittivity rare earth doped Hf O 2 for sub- 45 - nm metal-insulator-semiconductor devices

Impact of ozone concentration on atomic layer deposited Hf02 on GaAs

Thermal stability of lanthanum scandate dielectrics on Si(100)

Dipole model explaining high- k /metal gate field effect transistorthreshold voltage tuning

Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning

Outdiffusion of La and Al from amorphous LaAlO 3 in direct contactwith Si (001)

The Electrical Properties and Stability of the Hafnium Silicate/Si^sub 0.8^Ge^sub 0.2^(100) Interface

The electrical properties and stability of the hafnium silicate/SiO.8Ge0.2(100) interface

Deposition of Hf–silicate gate dielectric on Si x Ge 1−x (100): Detection of interfacial layer growth

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