UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied physics letters, 2015-04, Vol.106 (14)

2015

Volltextzugriff (PDF)

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Journal of materials research, 2021-12, Vol.36 (23), p.4638-4664

2021

Volltextzugriff (PDF)

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of applied physics, 2014-09, Vol.116 (12)

2014

Volltextzugriff (PDF)

Shallow Si donor in ion-implanted homoepitaxial AlN

Applied physics letters, 2020-04, Vol.116 (17)

2020

Volltextzugriff (PDF)

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Journal of crystal growth, 2016-03, Vol.438, p.81-89

2016

Volltextzugriff (PDF)

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

Journal of applied physics, 2021-11, Vol.130 (20)

2021

Volltextzugriff (PDF)

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Applied physics letters, 2015-06, Vol.106 (23)

2015

Volltextzugriff (PDF)

Complexes and compensation in degenerately donor doped GaN

Applied physics letters, 2020-09, Vol.117 (10)

2020

Volltextzugriff (PDF)

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied physics letters, 2018-02, Vol.112 (6)

2018

Volltextzugriff (PDF)

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied physics letters, 2015-08, Vol.107 (9)

2015

Volltextzugriff (PDF)

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

Journal of applied physics, 2020-03, Vol.127 (11)

2020

Volltextzugriff (PDF)

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

Journal of applied physics, 2018-09, Vol.124 (10)

2018

Volltextzugriff (PDF)

The role of surface kinetics on composition and quality of AlGaN

Journal of crystal growth, 2016-10, Vol.451, p.65-71

2016

Volltextzugriff (PDF)

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Applied physics letters, 2021-01, Vol.118 (2)

2021

Volltextzugriff (PDF)

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of applied physics, 2017-12, Vol.122 (24)

2017

Volltextzugriff (PDF)

The role of chemical potential in compensation control in Si:AlGaN

Journal of applied physics, 2020-03, Vol.127 (10)

2020

Volltextzugriff (PDF)

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Journal of applied physics, 2014-03, Vol.115 (10)

2014

Volltextzugriff (PDF)

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of applied physics, 2016-09, Vol.120 (10)

2016

Volltextzugriff (PDF)

Advances in Bulk Crystal Growth of AlN and GaN

MRS bulletin, 2009-04, Vol.34 (4), p.259-265

2009

Volltextzugriff (PDF)

Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

Journal of applied physics, 2014-10, Vol.116 (13)

2014

Volltextzugriff (PDF)

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied physics letters, 2014-12, Vol.105 (22), p.222101

2014

Volltextzugriff (PDF)

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

Volltextzugriff (PDF)

Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures

Applied physics letters, 2020-08, Vol.117 (9)

2020

Volltextzugriff (PDF)

Schottky contact formation on polar and non-polar AlN

Journal of applied physics, 2014-11, Vol.116 (19)

2014

Volltextzugriff (PDF)

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Applied physics letters, 2021-03, Vol.118 (11)

2021

Volltextzugriff (PDF)

1 – 25 von 275

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(232)
Mit Volltextzugriff
(226)

Publikationsform

Sprache

Englisch
(273)
Japanisch
(82)

Erscheinungsjahr

n.n

Thema

Physics
(178)
Science & Technology
(174)
Physical Sciences
(164)
Physics, Applied
(142)
Materials Science
(83)
Technology
(69)
Materials Science, Multidisciplinary
(59)
Applied Physics
(56)
Aluminum Nitride
(49)
Substrates
(41)
Gallium Nitrides
(38)
Physics, Condensed Matter
(36)
Aluminum Gallium Nitrides
(35)
Exact Sciences And Technology
(27)
Cross-Disciplinary Physics: Materials Science; Rheology
(20)
Single Crystals
(19)
Sapphire
(18)
Silicon
(18)
Carrier Density
(17)
Photoluminescence
(17)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Shallow Si donor in ion-implanted homoepitaxial AlN

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Complexes and compensation in degenerately donor doped GaN

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

The role of surface kinetics on composition and quality of AlGaN

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

The role of chemical potential in compensation control in Si:AlGaN

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Advances in Bulk Crystal Growth of AlN and GaN

Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures

Schottky contact formation on polar and non-polar AlN

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Suchergebnisse filtern