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Towards Si1−xGex quantum-well resonant-state terahertz laser

Applied physics letters, 2001-12, Vol.79 (24), p.3909-3911

2001

Volltextzugriff (PDF)

Terahertz emission of SiGe/Si quantum wells

Thin solid films, 2000-12, Vol.380 (1), p.237-239

2000

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Kinetics of shallow acceptor impact ionization and recombination in p-Ge

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012034

2009

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Hole transport due to shallow acceptors along boron doped SiGe quantum wells

Thin solid films, 2000-12, Vol.380 (1), p.218-220

2000

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Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.831-834

2003

Volltextzugriff (PDF)

THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures

Physica Status Solidi (b), 2003-02, Vol.235 (2), p.293-296

2003

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Widely tunable continuous-wave THz laser

Applied physics letters, 1999-08, Vol.75 (6), p.757-759

1999

Volltextzugriff (PDF)

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.192-196

2007

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Terahertz stimulated emission from strained p-Ge and SiGe/Si structures

Journal of communications technology & electronics, 2003-09, Vol.48 (9), p.1047-1054

2003

Volltextzugriff (PDF)

THz lasing of SiGe/Si quantum-well structures due to shallow acceptors

physica status solidi (b), 2003-01, Vol.235 (1), p.135-138

2003

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Acceptor States in Boron Doped SiGe Quantum Wells

Materials science forum, 1997-01, Vol.258-263, p.1613-1618

1997

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Acceptor States in Boron Doped SiGe Quantum Wells

Materials science forum, 1997-01, Vol.258-263, p.91-96

1997

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Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge

Materials science forum, 1997-01, Vol.258-263, p.71-76

1997

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Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium

Journal of experimental and theoretical physics, 1999-01, Vol.88 (1), p.51-57

1999

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Low-Voltage Lasing of p-Ge under Uniaxial Stress

Materials science forum, 2002-01, Vol.384-385, p.189-192

2002

Volltextzugriff (PDF)

Negative Differential Conductivity in InAs/AlSb Superlattices

Acta physica Polonica, A, 2011-02, Vol.119 (2), p.210-211

2011

Volltextzugriff (PDF)

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron

physica status solidi (b), 1999-01, Vol.211 (1), p.495-499

1999

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Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure

physica status solidi (b), 1996-11, Vol.198 (1), p.35-40

1996

Volltextzugriff (PDF)

Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium

Physica. B, Condensed matter, 1999-12, Vol.272 (1), p.458-460

1999

Volltextzugriff (PDF)

Shallow Acceptor States in SiGe Quantum Wells

physica status solidi (b), 1998-12, Vol.210 (2), p.667-670

1998

Volltextzugriff (PDF)

Gunn domains and stimulated far-infrared radiation in p-Ge under uniaxial deformation

Physics letters. A, 1993-05, Vol.176 (1), p.133-136

1993

Volltextzugriff (PDF)

Spontaneous and stimulated emission of radiation from hot holes from uniaxially stressed germanium

Optical and quantum electronics, 1991, Vol.23 (2), p.S211-S216

1991

Volltextzugriff (PDF)

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures

Physica status solidi. B. Basic research, 2007, Vol.244 (1), p.192-196

2007

Volltextzugriff (PDF)

Hot carrier effect on resonant state THz laser operation

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S84-S86

2004

Volltextzugriff (PDF)

Low-voltage THz stimulated emission of stressed p-Ge

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2001, p.59-62

2001

Volltextzugriff (PDF)

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Towards Si1−xGex quantum-well resonant-state terahertz laser

Terahertz emission of SiGe/Si quantum wells

Kinetics of shallow acceptor impact ionization and recombination in p-Ge

Hole transport due to shallow acceptors along boron doped SiGe quantum wells

Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures

Widely tunable continuous-wave THz laser

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures

Terahertz stimulated emission from strained p-Ge and SiGe/Si structures

THz lasing of SiGe/Si quantum-well structures due to shallow acceptors

Acceptor States in Boron Doped SiGe Quantum Wells

Acceptor States in Boron Doped SiGe Quantum Wells

Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge

Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium

Low-Voltage Lasing of p-Ge under Uniaxial Stress

Negative Differential Conductivity in InAs/AlSb Superlattices

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron

Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure

Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium

Shallow Acceptor States in SiGe Quantum Wells

Gunn domains and stimulated far-infrared radiation in p-Ge under uniaxial deformation

Spontaneous and stimulated emission of radiation from hot holes from uniaxially stressed germanium

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures

Hot carrier effect on resonant state THz laser operation

Low-voltage THz stimulated emission of stressed p-Ge

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