UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 42

Sortiert nach

Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation

Nano letters, 2015-08, Vol.15 (8), p.5052-5058

2015

Volltextzugriff (PDF)

Assessment of phonon scattering-related mobility in β-Ga2O3

Semiconductor science and technology, 2018-09, Vol.33 (10)

2018

Volltextzugriff (PDF)

High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

Applied physics letters, 2022-02, Vol.120 (7)

2022

Volltextzugriff (PDF)

Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates

AIP advances, 2019-05, Vol.9 (5), p.055018-055018-7

2019

Volltextzugriff (PDF)

Electric-field dependent conduction mechanisms in crystalline chromia

Applied physics letters, 2015-03, Vol.106 (11)

2015

Volltextzugriff (PDF)

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

Scientific reports, 2017-09, Vol.7 (1), p.11256-9, Article 11256

2017

Volltextzugriff (PDF)

Assessment of phonon scattering-related mobility in β -Ga 2 O 3

Semiconductor science and technology, 2018-10, Vol.33 (10), p.105008

2018

Volltextzugriff (PDF)

High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

Applied physics letters, 2022-02, Vol.120 (7)

2022

Volltextzugriff (PDF)

Height-selective etching for regrowth of self-aligned contacts using MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1984-1987

2009

Volltextzugriff (PDF)

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

IEEE electron device letters, 2011-02, Vol.32 (2), p.137-139

2011

Volltextzugriff (PDF)

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

IEEE electron device letters, 2006-05, Vol.27 (5), p.313-316

2006

Volltextzugriff (PDF)

Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2988-2995

2012

Volltextzugriff (PDF)

Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies

Chemphyschem, 2015-09, Vol.16 (13), p.2842-2848

2015

Volltextzugriff (PDF)

Frequency Limits of InP-based Integrated Circuits

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.9-13

2007

Volltextzugriff (PDF)

Ultra-Low Resistance Ohmic Contacts to InGaAs/InP

2007 65th Annual Device Research Conference, 2007, p.149-150

2007

Volltextzugriff (PDF)

Conduction Mechanisms in CVD-Grown Monolayer MoS 2 Transistors: From Variable-Range Hopping to Velocity Saturation

Nano letters, 2015-08, Vol.15 (8), p.5052-5058

2015

Volltextzugriff (PDF)

Conduction Mechanisms in CVD-Grown Monolayer MoS sub(2) Transistors: From Variable-Range Hopping to Velocity Saturation

Nano letters, 2015-08, Vol.15 (8), p.5052-5058

2015

Volltextzugriff (PDF)

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm g, and 0.66- \Omega\cdot \hbox R

IEEE electron device letters, 2012-01, Vol.33 (1), p.26-28

2012

Volltextzugriff (PDF)

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

IEEE electron device letters, 2011-01, Vol.32 (1), p.33-35

2011

Volltextzugriff (PDF)

Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si

Physica. E, Low-dimensional systems & nanostructures, 2003-07, Vol.19 (1), p.167-172

2003

Volltextzugriff (PDF)

[Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

IEEE electron device letters, 2009-11, Vol.30 (11), p.1128

2009

Volltextzugriff (PDF)

hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

IEEE electron device letters, 2009-11, Vol.30 (11), p.1128-1130

2009

Volltextzugriff (PDF)

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

69th Device Research Conference, 2011, p.211-212

2011

Volltextzugriff (PDF)

Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 Ω-mm Ron

69th Device Research Conference, 2011, p.1-2

2011

Volltextzugriff (PDF)

hbox In 0.53 hbox Ga 0.47 hbox As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

IEEE electron device letters, 2009-01, Vol.30 (11)

2009

Volltextzugriff (PDF)

1 – 25 von 42

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(26)
Mit Volltextzugriff
(41)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(25)
Physical Sciences
(16)
Physics
(16)
Technology
(16)
Engineering
(13)
Engineering, Electrical & Electronic
(13)
Transistors
(10)
Indium Gallium Arsenide
(9)
Indium Phosphide
(9)
Physics, Applied
(9)
Exact Sciences And Technology
(8)
Hemts
(8)
Applied Sciences
(7)
Electronics
(7)
Materials Science
(7)
Mosfets
(7)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(7)
Bandwidth
(6)
Conductivity
(6)
Devices
(6)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation

Assessment of phonon scattering-related mobility in β-Ga2O3

High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates

Electric-field dependent conduction mechanisms in crystalline chromia

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

Assessment of phonon scattering-related mobility in β -Ga 2 O 3

High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

Height-selective etching for regrowth of self-aligned contacts using MBE

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies

Frequency Limits of InP-based Integrated Circuits

Ultra-Low Resistance Ohmic Contacts to InGaAs/InP

Conduction Mechanisms in CVD-Grown Monolayer MoS 2 Transistors: From Variable-Range Hopping to Velocity Saturation

Conduction Mechanisms in CVD-Grown Monolayer MoS sub(2) Transistors: From Variable-Range Hopping to Velocity Saturation

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm g, and 0.66- \Omega\cdot \hbox R

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si

[Formula Omitted] Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

hbox\hbox\hbox Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 Ω-mm Ron

hbox In 0.53 hbox Ga 0.47 hbox As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Suchergebnisse filtern