UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing

Current Applied Physics, 2023, 49(0), , pp.83-90

2023

Volltextzugriff (PDF)

Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs

Nanoscale research letters, 2021-10, Vol.16 (1), p.159-159, Article 159

2021

Volltextzugriff (PDF)

Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

Journal of crystal growth, 2018-05, Vol.490, p.19-24

2018

Volltextzugriff (PDF)

Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition

Applied physics express, 2019-01, Vol.12 (1), p.15502

2019

Volltextzugriff (PDF)

Small-Signal Analysis of Channel Resistance R L at Low Gate Bias Voltages in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6033-6038

2021

Volltextzugriff (PDF)

Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6033-6038

2021

Volltextzugriff (PDF)

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Engineering Research Express, 2024-06, Vol.6 (2), p.25309

2024

Volltextzugriff (PDF)

Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping

Applied surface science, 2018-08, Vol.449, p.823-828

2018

Volltextzugriff (PDF)

Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio

Journal of crystal growth, 2019-09, Vol.522, p.30-36

2019

Volltextzugriff (PDF)

An improved parasitic resistance extraction strategy alongside the effect of C ds at low gate bias voltages for AlGaN/GaN HEMTs

Engineering Research Express, 2021-03, Vol.3 (1), p.15009

2021

Volltextzugriff (PDF)

An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs

Engineering Research Express, 2021-03, Vol.3 (1)

2021

Volltextzugriff (PDF)

Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Journal of crystal growth, 2019-01, Vol.506, p.45-54

2019

Volltextzugriff (PDF)

Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT

2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020, p.117-118

2020

Volltextzugriff (PDF)

Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD

Materials science in semiconductor processing, 2021-11, Vol.135, p.106103, Article 106103

2021

Volltextzugriff (PDF)

Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap

Materials science in semiconductor processing, 2019-11, Vol.103, p.104605, Article 104605

2019

Volltextzugriff (PDF)

Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance

Materials science in semiconductor processing, 2019-10, Vol.101, p.247-252

2019

Volltextzugriff (PDF)

Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET

ECS journal of solid state science and technology, 2021-06, Vol.10 (6), p.61004

2021

Volltextzugriff (PDF)

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409

2020

Volltextzugriff (PDF)

Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate

IEEE transactions on nanotechnology, 2018-11, Vol.17 (6), p.1151-1158

2018

Volltextzugriff (PDF)

Selective Area Epitaxy of Axial Wurtzite -InAs Nanowire on InGaAs NW by MOCVD

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, p.1-2

2021

Volltextzugriff (PDF)

Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor

Engineering Research Express, 2020-09, Vol.2 (3), p.35004

2020

Volltextzugriff (PDF)

An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability

2020 5th IEEE International Conference on Emerging Electronics (ICEE), 2020, p.1-3

2020

Volltextzugriff (PDF)

CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), 2022, p.235-240

2022

Volltextzugriff (PDF)

A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects

Microelectronics, 2019-05, Vol.87, p.51-54

2019

Volltextzugriff (PDF)

Growth and crystal structure investigation of self-catalyst InAs/GaSb heterostructure nanowires on Si substrate

2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), 2017, p.133-134

2017

Volltextzugriff (PDF)

1 – 25 von 109

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(71)
Mit Volltextzugriff
(86)

Publikationsform

Sprache

Englisch
(109)

Erscheinungsjahr

n.n

Thema

Science & Technology
(59)
Life Sciences & Biomedicine
(31)
Technology
(26)
Physical Sciences
(19)
Engineering
(17)
Physics
(14)
Physics, Applied
(14)
Materials Science
(12)
Materials Science, Multidisciplinary
(11)
Biomedical And Life Sciences
(10)
Engineering, Electrical & Electronic
(10)
Life Sciences
(10)
Microbiology
(10)
Plant Sciences
(10)
Original Article
(8)
Science & Technology - Other Topics
(8)
Surgery
(8)
Plant Growth
(7)
Abiotic Stress
(6)
Aluminum Gallium Nitrides
(6)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing

Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs

Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition

Small-Signal Analysis of Channel Resistance R L at Low Gate Bias Voltages in AlGaN/GaN HEMTs

Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping

Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio

An improved parasitic resistance extraction strategy alongside the effect of C ds at low gate bias voltages for AlGaN/GaN HEMTs

An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs

Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT

Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD

Simulation study of gated nanowire InAs/Si Hetero p channel TFET and effects of interface trap

Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance

Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate

Selective Area Epitaxy of Axial Wurtzite -InAs Nanowire on InGaAs NW by MOCVD

Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor

An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability

CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing

A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects

Growth and crystal structure investigation of self-catalyst InAs/GaSb heterostructure nanowires on Si substrate

Suchergebnisse filtern