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All-optical logic based on ultrafast gain and index dynamics in a semiconductor optical amplifier

IEEE journal of selected topics in quantum electronics, 2004-09, Vol.10 (5), p.1079-1092

2004

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Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices

IEEE journal of quantum electronics, 2001-08, Vol.37 (8), p.1059-1065

2001

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Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs-AlAs-AlAsSb Coupled Quantum Wells

IEEE photonics technology letters, 2007-04, Vol.19 (8), p.604-606

2007

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Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

IEEE photonics technology letters, 2008-12, Vol.20 (24), p.2183-2185

2008

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Indices of refraction of AlGaAsSb by an optical waveguide technique

Journal of applied physics, 2007-12, Vol.102 (11), p.113111-113111-4

2007

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Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device

IEEE photonics technology letters, 2000-10, Vol.12 (10), p.1301-1303

2000

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Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 2007-04, Vol.301, p.177-180

2007

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Ultrafast refractive-index dynamics in a multiquantum-well semiconductor optical amplifier

IEEE photonics technology letters, 2003-06, Vol.15 (6), p.792-794

2003

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InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

IEEE photonics technology letters, 2003-10, Vol.15 (10), p.1363-1365

2003

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Enhancement of third-order nonlinear optical susceptibilities in compressively strained quantum wells under the population inversion condition

IEEE journal of quantum electronics, 1999-12, Vol.35 (12), p.1817-1825

1999

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Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

Applied physics letters, 2002-06, Vol.80 (25), p.4696-4698

2002

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Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells

IEEE journal of quantum electronics, 2003-11, Vol.39 (11), p.1356-1361

2003

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High-efficiency wavelength conversion using FWM in an SOA integrated DFB laser

IEEE photonics technology letters, 2000-01, Vol.12 (1), p.31-33

2000

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Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells

IEEE journal of quantum electronics, 2003-02, Vol.39 (2), p.299-305

2003

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Design optimisation of SOA-integrated DFB laser wavelength converter

Electronics letters, 2002-02, Vol.38 (5), p.239-241

2002

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Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well

Electronics letters, 2001-09, Vol.37 (20), p.1265-1267

2001

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1.35 mu m intersubband transition in InGaAs/AlAsSb single quantum wells

Electronics letters, 2002-06, Vol.38 (12), p.600-602

2002

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Ultra-Low-Power (1.59 mW/Gbps), 56-Gbps PAM4 Operation of Si Photonic Transmitter Integrating Segmented PIN Mach-Zehnder Modulator and 28-nm CMOS Driver

2017 European Conference on Optical Communication (ECOC), 2017, p.1-3

2017

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Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 [mu]m AlGaInAs MQW distributed-reflector lasers

Electronics letters, 2012-04, Vol.48 (8), p.1

2012

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Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 mu m AlGaInAs MQW distributed-reflector lasers

Electronics letters, 2012-04, Vol.48 (8), p.1-1

2012

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Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 μm AlGalnAs MQW distributed-reflector lasers

Electronics letters, 2012, Vol.48 (8), p.450-452

2012

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Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 [micro sign]m AlGaInAs MQW distributed-reflector lasers

Electronics letters, 2012, Vol.48 (8), p.450

2012

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Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers

Applied physics letters, 2000-09, Vol.77 (12), p.1753-1755

2000

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4-Wavelength 25.8-Gbps directly modulated laser array of 1.3-μm AlGaInAs distributed-reflector lasers

ISLC 2012 International Semiconductor Laser Conference, 2012, p.54-55

2012

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High-Speed Directly Modulated Distributed-Reflector Lasers

2014 International Semiconductor Laser Conference, 2014, p.64-65

2014

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All-optical logic based on ultrafast gain and index dynamics in a semiconductor optical amplifier

Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices

Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs-AlAs-AlAsSb Coupled Quantum Wells

Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

Indices of refraction of AlGaAsSb by an optical waveguide technique

Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device

Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Ultrafast refractive-index dynamics in a multiquantum-well semiconductor optical amplifier

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

Enhancement of third-order nonlinear optical susceptibilities in compressively strained quantum wells under the population inversion condition

Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells

High-efficiency wavelength conversion using FWM in an SOA integrated DFB laser

Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells

Design optimisation of SOA-integrated DFB laser wavelength converter

Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well

1.35 mu m intersubband transition in InGaAs/AlAsSb single quantum wells

Ultra-Low-Power (1.59 mW/Gbps), 56-Gbps PAM4 Operation of Si Photonic Transmitter Integrating Segmented PIN Mach-Zehnder Modulator and 28-nm CMOS Driver

Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 [mu]m AlGaInAs MQW distributed-reflector lasers

Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 mu m AlGaInAs MQW distributed-reflector lasers

Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 μm AlGalnAs MQW distributed-reflector lasers

Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 [micro sign]m AlGaInAs MQW distributed-reflector lasers

Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers

4-Wavelength 25.8-Gbps directly modulated laser array of 1.3-μm AlGaInAs distributed-reflector lasers

High-Speed Directly Modulated Distributed-Reflector Lasers

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