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AlScN: A III-V semiconductor based ferroelectric

Journal of applied physics, 2019-03, Vol.125 (11)

2019

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Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN

Journal of applied physics, 2021-01, Vol.129 (3)

2021

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From Fully Strained to Relaxed: Epitaxial Ferroelectric Al1‐xScxN for III‐N Technology

Advanced functional materials, 2022-05, Vol.32 (21), p.n/a

2022

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AlScN-based MEMS magnetoelectric sensor

Applied physics letters, 2020-09, Vol.117 (13)

2020

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Stress controlled pulsed direct current co-sputtered Al1−xScxN as piezoelectric phase for micromechanical sensor applications

APL materials, 2015-11, Vol.3 (11), p.116102-116102-6

2015

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In‐Grain Ferroelectric Switching in Sub‐5 nm Thin Al0.74Sc0.26N Films at 1 V

Advanced science, 2023-09, Vol.10 (25), p.n/a

2023

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Thin-Film-Based SAW Magnetic Field Sensors

Sensors (Basel, Switzerland), 2021-12, Vol.21 (24), p.8166

2021

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Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Micromachines (Basel), 2022-08, Vol.13 (8), p.1282

2022

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Influence of the piezoelectric material on the signal and noise of magnetoelectric magnetic field sensors based on the delta-E effect

APL materials, 2021-03, Vol.9 (3), p.031108-031108-7

2021

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Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N

Advanced Physics Research, 2024-05, Vol.3 (5), p.n/a

2024

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Growth of Highly c-Axis Oriented AlScN Films on Commercial Substrates

Micromachines (Basel), 2022-05, Vol.13 (5), p.783

2022

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The interplay between imprint, wake-up, and domains in ferroelectric Al0.70Sc0.30N

Journal of applied physics, 2024-05, Vol.135 (20)

2024

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A spiking and adapting tactile sensor for neuromorphic applications

Scientific reports, 2020-10, Vol.10 (1), p.17260-17260, Article 17260

2020

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Domain Dynamics and Resistive Switching in Ferroelectric Al1–xScxN Thin Film Capacitors

Advanced functional materials, 2024-07, Vol.34 (28), p.n/a

2024

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Domain Dynamics and Resistive Switching in Ferroelectric Al 1–x Sc x N Thin Film Capacitors

Advanced functional materials, 2024-07, Vol.34 (28)

2024

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On the exceptional temperature stability of ferroelectric Al1-xScxN thin films

Applied physics letters, 2021-06, Vol.118 (23)

2021

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Clarification of the spontaneous polarization direction in crystals with wurtzite structure

Applied physics letters, 2024-07, Vol.125 (4)

2024

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A Comparative Study of Pt/Al 0.72 Sc 0.28 N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

ACS applied materials & interfaces, 2023-09, Vol.15 (35), p.41606-41613

2023

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Ultrathin Al1−xScxN for Low‐Voltage‐Driven Ferroelectric‐Based Devices

Physica status solidi. PSS-RRL. Rapid research letters, 2023-01, Vol.17 (1)

2023

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A Comparative Study of Pt/Al0.72Sc0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

ACS applied materials & interfaces, 2023-09, Vol.15 (35), p.41606-41613

2023

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Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems

Journal of applied physics, 2017-07, Vol.122 (3)

2017

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Frequency tunable resonant magnetoelectric sensors for the detection of weak magnetic field

Journal of micromechanics and microengineering, 2020-07, Vol.30 (7), p.75009

2020

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Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O 2 to AlN and Related Materials

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5)

2021

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Rapid Research Letters

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5)

2021

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Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O2 to AlN and Related Materials

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

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AlScN: A III-V semiconductor based ferroelectric

Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN

From Fully Strained to Relaxed: Epitaxial Ferroelectric Al1‐xScxN for III‐N Technology

AlScN-based MEMS magnetoelectric sensor

Stress controlled pulsed direct current co-sputtered Al1−xScxN as piezoelectric phase for micromechanical sensor applications

In‐Grain Ferroelectric Switching in Sub‐5 nm Thin Al0.74Sc0.26N Films at 1 V

Thin-Film-Based SAW Magnetic Field Sensors

Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Influence of the piezoelectric material on the signal and noise of magnetoelectric magnetic field sensors based on the delta-E effect

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N

Growth of Highly c-Axis Oriented AlScN Films on Commercial Substrates

The interplay between imprint, wake-up, and domains in ferroelectric Al0.70Sc0.30N

A spiking and adapting tactile sensor for neuromorphic applications

Domain Dynamics and Resistive Switching in Ferroelectric Al1–xScxN Thin Film Capacitors

Domain Dynamics and Resistive Switching in Ferroelectric Al 1–x Sc x N Thin Film Capacitors

On the exceptional temperature stability of ferroelectric Al1-xScxN thin films

Clarification of the spontaneous polarization direction in crystals with wurtzite structure

A Comparative Study of Pt/Al 0.72 Sc 0.28 N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

Ultrathin Al1−xScxN for Low‐Voltage‐Driven Ferroelectric‐Based Devices

A Comparative Study of Pt/Al0.72Sc0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates

Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems

Frequency tunable resonant magnetoelectric sensors for the detection of weak magnetic field

Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O 2 to AlN and Related Materials

Rapid Research Letters

Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O2 to AlN and Related Materials

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