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Detailed structural and electrical characterization of plated crystalline silicon solar cells

Solar energy materials and solar cells, 2018-09, Vol.184, p.57-66

2018

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Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3062-3068

2020

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Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact

1, 2018

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Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Defect profiling in FEFET Si:HfO2 layers

Applied physics letters, 2020-11, Vol.117 (20)

2020

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Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors

Semiconductor science and technology, 2020-12, Vol.36 (2), p.24003

2020

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Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

IEEE electron device letters, 2022-05, Vol.43 (5), p.674-677

2022

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Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications

Journal of applied physics, 2014-12, Vol.116 (23)

2014

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Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Semiconductor science and technology, 2019-06, Vol.34 (7)

2019

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Junctionless versus inversion-mode lateral semiconductor nanowire transistors

Journal of physics. Condensed matter, 2018-09, Vol.30 (38), p.384002-384002

2018

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Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

AIP advances, 2021-01, Vol.11 (1), p.015219-015219-4

2021

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Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium

Applied physics letters, 2005-10, Vol.87 (17)

2005

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Geometry Dependence of Total-Dose Effects in Bulk FinFETs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2951-2958

2014

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Random telegraph noise: The key to single defect studies in nano-devices

Thin solid films, 2016-08, Vol.613, p.2-5

2016

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Impact strain engineering on gate stack quality and reliability

Solid-state electronics, 2008-08, Vol.52 (8), p.1115-1126

2008

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Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures

Semiconductor science and technology, 2016-12, Vol.31 (12), p.124006

2016

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Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

Semiconductor science and technology, 2020-02, Vol.36 (2), p.24002

2020

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Defects in Si foils fabricated by spalling at low temperature: electrical activity and atomic nature

Journal of physics. D, Applied physics, 2013-04, Vol.46 (15), p.155501

2013

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On the flicker noise in submicron silicon MOSFETs

Solid-state electronics, 1999-05, Vol.43 (5), p.865-882

1999

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2287-2296

2008

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Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si

Semiconductor science and technology, 2018-07, Vol.33 (7), p.75015

2018

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Diffusion, activation, and regrowth behavior of high dose P implants in Ge

Applied physics letters, 2006-04, Vol.88 (16), p.162118-162118-3

2006

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A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

Applied physics letters, 2009-03, Vol.94 (10), p.102115-102115-3

2009

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Origin of NBTI variability in deeply scaled pFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.26-32

2010

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Detailed structural and electrical characterization of plated crystalline silicon solar cells

Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Defect profiling in FEFET Si:HfO2 layers

Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Junctionless versus inversion-mode lateral semiconductor nanowire transistors

Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Random telegraph noise: The key to single defect studies in nano-devices

Impact strain engineering on gate stack quality and reliability

Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

Defects in Si foils fabricated by spalling at low temperature: electrical activity and atomic nature

On the flicker noise in submicron silicon MOSFETs

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si

Diffusion, activation, and regrowth behavior of high dose P implants in Ge

A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

Origin of NBTI variability in deeply scaled pFETs

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