UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Ohm's Law Survives to the Atomic Scale

Science (American Association for the Advancement of Science), 2012-01, Vol.335 (6064), p.64-67

2012

Volltextzugriff (PDF)

Spatially resolving valley quantum interference of a donor in silicon

Nature materials, 2014-06, Vol.13 (6), p.605-610

2014

Volltextzugriff (PDF)

Spatial metrology of dopants in silicon with exact lattice site precision

Nature nanotechnology, 2016-09, Vol.11 (9), p.763-768

2016

Volltextzugriff (PDF)

Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture

Nanotechnology, 2013-02, Vol.24 (4), p.045303-045303

2013

Volltextzugriff (PDF)

Atomically precise placement of single dopants in si

Physical review letters, 2003-09, Vol.91 (13), p.136104-136104, Article 136104

2003

Volltextzugriff (PDF)

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

Nanotechnology, 2011-09, Vol.22 (37), p.375203-1-5

2011

Volltextzugriff (PDF)

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Nano letters, 2004-10, Vol.4 (10), p.1969-1973

2004

Volltextzugriff (PDF)

Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport

Nano letters, 2012-09, Vol.12 (9), p.4953-4959

2012

Volltextzugriff (PDF)

Fano factor reduction on the 0.7 conductance structure of a ballistic one-dimensional wire

Physical review letters, 2004-09, Vol.93 (11), p.116602.1-116602.4, Article 116602

2004

Volltextzugriff (PDF)

Dual-temperature encapsulation of phosphorus in germanium δ ‐layers toward ultra-shallow junctions

Journal of crystal growth, 2011-02, Vol.316 (1), p.81-84

2011

Volltextzugriff (PDF)

Possible Spin Polarization in a One-Dimensional Electron Gas

Physical review letters, 1996-07, Vol.77 (1), p.135-138

1996

Volltextzugriff (PDF)

Precession and motional slowing of spin evolution in a high mobility two-dimensional electron gas

Physical review letters, 2002-12, Vol.89 (23), p.236601-236601, Article 236601

2002

Volltextzugriff (PDF)

Phosphine dissociation on the Si(001) surface

Physical review letters, 2004-11, Vol.93 (22), p.226102.1-226102.4, Article 226102

2004

Volltextzugriff (PDF)

Influence of doping density on electronic transport in degenerate Si:P δ -doped layers

Physical review. B, Condensed matter and materials physics, 2006-01, Vol.73 (3), Article 035401

2006

Volltextzugriff (PDF)

Interaction effects in a one-dimensional constriction

Physical review. B, Condensed matter, 1998-08, Vol.58 (8), p.4846-4852

1998

Volltextzugriff (PDF)

Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

Applied surface science, 2013-01, Vol.265, p.833-838

2013

Volltextzugriff (PDF)

Observation of Charge Transport by Negatively Charged Excitons

Science (American Association for the Advancement of Science), 2001-10, Vol.294 (5543), p.837-839

2001

Volltextzugriff (PDF)

Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

Applied physics letters, 2004-08, Vol.85 (8), p.1359-1361

2004

Volltextzugriff (PDF)

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Applied physics letters, 2002-10, Vol.81 (17), p.3197-3199

2002

Volltextzugriff (PDF)

Phosphine adsorption and dissociation on the Si(001) surface : An ab initio survey of structures

Physical review. B, Condensed matter and materials physics, 2005-09, Vol.72 (12), p.125328.1-125328.15, Article 125328

2005

Volltextzugriff (PDF)

Weak localization in high-quality two-dimensional systems

Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (24), p.245311.1-245311.16, Article 245311

2004

Volltextzugriff (PDF)

Metal-Insulator Transition at B = 0 in a Dilute Two Dimensional GaAs-AlGaAs Hole Gas

Physical review letters, 1998-02, Vol.80 (6), p.1292-1295

1998

Volltextzugriff (PDF)

Spin properties of low-density one-dimensional wires

Physical review. B, Condensed matter, 2000-05, Vol.61 (20), p.R13365-R13368

2000

Volltextzugriff (PDF)

Effect of encapsulation temperature on Si : P δ -doped layers

Applied physics letters, 2004-11, Vol.85 (21), p.4953-4955

2004

Volltextzugriff (PDF)

Weak localization, hole-hole interactions, and the "Metal"-insulator transition in two dimensions

Physical review letters, 2000-03, Vol.84 (11), p.2489-2492

2000

Volltextzugriff (PDF)

1 – 25 von 228

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(177)
Mit Volltextzugriff
(222)

Publikationsform

Sprache

Englisch
(228)
Japanisch
(37)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Ohm's Law Survives to the Atomic Scale

Spatially resolving valley quantum interference of a donor in silicon

Spatial metrology of dopants in silicon with exact lattice site precision

Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture

Atomically precise placement of single dopants in si

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport

Fano factor reduction on the 0.7 conductance structure of a ballistic one-dimensional wire

Dual-temperature encapsulation of phosphorus in germanium δ ‐layers toward ultra-shallow junctions

Possible Spin Polarization in a One-Dimensional Electron Gas

Precession and motional slowing of spin evolution in a high mobility two-dimensional electron gas

Phosphine dissociation on the Si(001) surface

Influence of doping density on electronic transport in degenerate Si:P δ -doped layers

Interaction effects in a one-dimensional constriction

Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

Observation of Charge Transport by Negatively Charged Excitons

Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Phosphine adsorption and dissociation on the Si(001) surface : An ab initio survey of structures

Weak localization in high-quality two-dimensional systems

Metal-Insulator Transition at B = 0 in a Dilute Two Dimensional GaAs-AlGaAs Hole Gas

Spin properties of low-density one-dimensional wires

Effect of encapsulation temperature on Si : P δ -doped layers

Weak localization, hole-hole interactions, and the "Metal"-insulator transition in two dimensions

Suchergebnisse filtern