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Towards actinide heterostructure synthesis and science

Nature communications, 2022-04, Vol.13 (1), p.2221-2221, Article 2221

2022

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GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

Applied physics letters, 2015-03, Vol.106 (11)

2015

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Tensile-strained growth on low-index GaAs

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Electrochemically induced amorphous-to-rock-salt phase transformation in niobium oxide electrode for Li-ion batteries

Nature materials, 2022-07, Vol.21 (7), p.795-803

2022

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Strain-driven quantum dot self-assembly by molecular beam epitaxy

Journal of applied physics, 2020-07, Vol.128 (3)

2020

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Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2017-01, Vol.35 (1)

2017

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Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots

ACS nano, 2023-02, Vol.17 (3), p.2318-2327

2023

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Advances in actinide thin films: synthesis, properties, and future directions

Reports on progress in physics, 2022-12, Vol.85 (12), p.123101

2022

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Supporting STEM graduate students in strengthening their professional identity through an authentic interdisciplinary partnership

Studies in Graduate and Postdoctoral Education, 2024-01, Vol.15 (1), p.96-116

2024

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Impact of arsenic species on self-assembly of triangular and hexagonal tensile-strained GaAs(111)A quantum dots

Semiconductor science and technology, 2020-10, Vol.35 (10), p.105001

2020

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Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

Scientific reports, 2019-12, Vol.9 (1), p.18179-10, Article 18179

2019

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Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A

Crystal growth & design, 2021-03, Vol.21 (3), p.1674-1682

2021

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Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A

Journal of crystal growth, 2020-03, Vol.533, p.125468, Article 125468

2020

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Self-assembly on (111)-oriented III-V surfaces

Applied physics letters, 2011-09, Vol.99 (12), p.123111-123111-3

2011

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Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Applied physics letters, 2014-12, Vol.105 (25)

2014

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Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting

JPhys photonics, 2021-04, Vol.3 (2), p.24012

2021

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Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Optics express, 2016-10, Vol.24 (20), p.23198-23206

2016

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Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

ACS nano, 2013-06, Vol.7 (6), p.5017-5023

2013

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Examination of the Shape and Structure of (111)-oriented GaAs Tensile-Strained Quantum Dots using Transmission Electron Microscopy, Electron Energy Loss Spectroscopy, and Atom Probe Tomography

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.2208-2209

2019

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Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Applied physics letters, 2015-03, Vol.106 (10)

2015

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Improved quantum dot stacking for intermediate band solar cells using strain compensation

Nanotechnology, 2014-11, Vol.25 (44), p.445402-445402

2014

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Self-assembled In0.5Ga0.5As quantum dots on GaP

Applied physics letters, 2010-11, Vol.97 (22)

2010

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Defect generation in TiO 2 nanotube anodes via heat treatment in various atmospheres for lithium-ion batteries

Physical chemistry chemical physics : PCCP, 2018-09, Vol.20 (35), p.22537-22546

2018

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Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots

Journal of crystal growth, 2015-09, Vol.425 (C), p.312-315

2015

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Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Applied physics letters, 2016-04, Vol.108 (16)

2016

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Towards actinide heterostructure synthesis and science

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

Tensile-strained growth on low-index GaAs

Electrochemically induced amorphous-to-rock-salt phase transformation in niobium oxide electrode for Li-ion batteries

Strain-driven quantum dot self-assembly by molecular beam epitaxy

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots

Advances in actinide thin films: synthesis, properties, and future directions

Supporting STEM graduate students in strengthening their professional identity through an authentic interdisciplinary partnership

Impact of arsenic species on self-assembly of triangular and hexagonal tensile-strained GaAs(111)A quantum dots

Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A

Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A

Self-assembly on (111)-oriented III-V surfaces

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

Examination of the Shape and Structure of (111)-oriented GaAs Tensile-Strained Quantum Dots using Transmission Electron Microscopy, Electron Energy Loss Spectroscopy, and Atom Probe Tomography

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Improved quantum dot stacking for intermediate band solar cells using strain compensation

Self-assembled In0.5Ga0.5As quantum dots on GaP

Defect generation in TiO 2 nanotube anodes via heat treatment in various atmospheres for lithium-ion batteries

Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots

Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

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