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The role of same-sex mentorship and organizational support in encouraging women to pursue surgery

The American journal of surgery, 2017-10, Vol.214 (4), p.640-644

2017

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Reducing ethnic and racial disparities by improving undertreatment, control, and engagement in blood pressure management with health information technology (REDUCE-BP) hybrid effectiveness-implementation pragmatic trial: Rationale and design

The American heart journal, 2023-01, Vol.255, p.12-21

2023

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High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

Applied physics letters, 2017-12, Vol.111 (24)

2017

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Nonresonant detection of terahertz radiation in field effect transistors

Journal of applied physics, 2002-06, Vol.91 (11), p.9346-9353

2002

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The 1.6-kV AlGaN/GaN HFETs

IEEE electron device letters, 2006-09, Vol.27 (9), p.716-718

2006

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An assessment of wide bandgap semiconductors for power devices

IEEE transactions on power electronics, 2003-05, Vol.18 (3), p.907-914

2003

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AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Applied physics letters, 2000-08, Vol.77 (9), p.1339-1341

2000

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Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Applied physics letters, 2002-05, Vol.80 (19), p.3542-3544

2002

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Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

IEEE electron device letters, 2005-08, Vol.26 (8), p.535-537

2005

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Investigating the Association Between Telemedicine Use and Timely Follow-Up Care After Acute Cardiovascular Hospital Encounters

JACC. Advances (Online), 2022-12, Vol.1 (5), p.100156-100156, Article 100156

2022

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Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Applied physics letters, 2002-02, Vol.80 (6), p.977-979

2002

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Field-plate engineering for HFETs

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2534-2540

2005

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An Efficient High-Frequency Drive Circuit for GaN Power HFETs

IEEE transactions on industry applications, 2009-03, Vol.45 (2), p.843-853

2009

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AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

IEEE electron device letters, 2002-08, Vol.23 (8), p.455-457

2002

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Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

Applied physics letters, 2003-11, Vol.83 (18), p.3722-3724

2003

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Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

IEEE electron device letters, 2007-09, Vol.28 (9), p.784-786

2007

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Third-order nonlinearity compensation in field effect transistors

Electronics letters, 2011-11, Vol.47 (24), p.1343-1345

2011

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Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

IEEE electron device letters, 2002-08, Vol.23 (8), p.449-451

2002

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Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Applied physics letters, 2002-12, Vol.81 (26), p.4910-4912

2002

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Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

Journal of applied physics, 2004-06, Vol.95 (11), p.6409-6413

2004

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Compact Model of Current Collapse in Heterostructure Field-Effect Transistors

IEEE electron device letters, 2007-05, Vol.28 (5), p.332-335

2007

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Mechanism of current collapse removal in field-plated nitride HFETs

IEEE electron device letters, 2005-10, Vol.26 (10), p.704-706

2005

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RF power limiter using capacitively-coupled contacts III-nitride varactor

Electronics letters, 2012-11, Vol.48 (23), p.1480-1481

2012

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Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Applied physics letters, 2001-10, Vol.79 (16), p.2651-2653

2001

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Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Applied physics letters, 2002-11, Vol.81 (22), p.4130-4132

2002

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The role of same-sex mentorship and organizational support in encouraging women to pursue surgery

Reducing ethnic and racial disparities by improving undertreatment, control, and engagement in blood pressure management with health information technology (REDUCE-BP) hybrid effectiveness-implementation pragmatic trial: Rationale and design

High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

Nonresonant detection of terahertz radiation in field effect transistors

The 1.6-kV AlGaN/GaN HFETs

An assessment of wide bandgap semiconductors for power devices

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

Investigating the Association Between Telemedicine Use and Timely Follow-Up Care After Acute Cardiovascular Hospital Encounters

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Field-plate engineering for HFETs

An Efficient High-Frequency Drive Circuit for GaN Power HFETs

AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

Third-order nonlinearity compensation in field effect transistors

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

Compact Model of Current Collapse in Heterostructure Field-Effect Transistors

Mechanism of current collapse removal in field-plated nitride HFETs

RF power limiter using capacitively-coupled contacts III-nitride varactor

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

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