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Defining the Value of Injection Current and Effective Electrical Contact Area for EGaIn-Based Molecular Tunneling Junctions

Journal of the American Chemical Society, 2013-12, Vol.135 (48), p.18131-18144

2013

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Odd–Even Effects in Charge Transport across n‑Alkanethiolate-Based SAMs

Journal of the American Chemical Society, 2014-12, Vol.136 (48), p.16919-16925

2014

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Progress in Micro- and Nanopatterning via Electrochemical Lithography

Journal of physical chemistry. C, 2009-11, Vol.113 (44), p.18987-18994

2009

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Hazard Screening Methods for Nanomaterials: A Comparative Study

International journal of molecular sciences, 2018-02, Vol.19 (3), p.649

2018

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The Au(111)/Electrolyte Interface: A Tunnel-Spectroscopic and DFT Investigation

Angewandte Chemie (International ed.), 2007-01, Vol.46 (46), p.8903-8906

2007

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Magnetic Assembly of Soft Robots with Hard Components

Advanced functional materials, 2014-04, Vol.24 (15), p.2180-2187

2014

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Multi-element analysis of single nanoparticles by ICP-MS using quadrupole and time-of-flight technologies

Journal of analytical atomic spectrometry, 2018, Vol.33 (5), p.835-845

2018

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Assessment of cytotoxicity of metal oxide nanoparticles on the basis of fundamental physical-chemical parameters: a robust approach to grouping

Environmental science. Nano, 2019-10, Vol.6 (1), p.312-3112

2019

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Tunneling across SAMs Containing Oligophenyl Groups

Journal of physical chemistry. C, 2016-06, Vol.120 (21), p.11331-11337

2016

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Gold nano-islands on FTO as plasmonic nanostructures for biosensors

Sensors and actuators. B, Chemical, 2011-03, Vol.152 (2), p.206-213

2011

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Additive nanoscale embedding of functional nanoparticles on silicon surface

Nanoscale, 2010-10, Vol.2 (10), p.2069-2072

2010

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Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

Angewandte Chemie (International ed.), 2014-04, Vol.53 (15), p.3889-3893

International ed. in English, 2014

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Tunneling behavior of electrified interfaces

Surface science, 2008-04, Vol.602 (7), p.1401-1407

2008

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Fabrication of Paper‐Templated Structures of Noble Metals

Advanced materials technologies, 2017-02, Vol.2 (2), p.n/a

2017

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Electrochemical behaviour of nano-faceted Ir(2 1 0)

Electrochemistry communications, 2009, Vol.11 (1), p.31-33

2009

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Active and Non-Active Large-Area Metal-Molecules-Metal Junctions

Unimolecular and Supramolecular Electronics II, 2012, Vol.313, p.85-119

Metzger, Robert M

2012

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Bridging the gap between nanoparticles and single crystal surfaces

Faraday discussions, 2008-01, Vol.140, p.69-80

2008

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Die Au(111)-Elektrolyt-Grenzschicht: eine Tunnelspektroskopie- und DFT-Untersuchung

Angewandte Chemie, 2007-11, Vol.119 (46), p.9061-9064

2007

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Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

Angewandte Chemie, 2014-04, Vol.126 (15), p.3970-3974

2014

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Assessing occupational risk in designs of production processes of nano-materials

NanoImpact, 2019-02, Vol.14, p.100149, Article 100149

2019

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Multi-element analysis of single nanoparticles by ICP-MS using quadrupole and time-of-flight technologiesElectronic supplementary information (ESI) available: ESI on the instrument specifics reported by the manufacturers (Table S1), parameters for spICP-MS measurements (Tables S2-S5), nanoparticle characteristics (Table S6, Fig. S1), particle size distributions of all particles involved in this study (Fig. S2), temporal shifts of Ti and Bi signals (Fig. S3) and distribution histogram of V/Bi and

2018-05

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Replacing Ag super(TS)SCH sub(2)-R with Ag super(TS)O sub(2)C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

Angewandte Chemie (International ed.), 2014-04, Vol.53 (15), p.3889-3893

2014

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Tunneling across SAMs Containing Oligophenyl Groups

Journal of physical chemistry. C, 2016-04, Vol.120 (21)

2016

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Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga 2 O 3 Top-Interface of Ag TS /S(CH 2 ) n T//Ga 2 O 3 /EGaIn Junctions

Nano letters, 2014-06, Vol.14 (6), p.3521-3526

2014

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Defining the Value of Injection Current and Effective Electrical Contact Area for EGaIn-Based Molecular Tunneling Junctions

Odd–Even Effects in Charge Transport across n‑Alkanethiolate-Based SAMs

Progress in Micro- and Nanopatterning via Electrochemical Lithography

Hazard Screening Methods for Nanomaterials: A Comparative Study

The Au(111)/Electrolyte Interface: A Tunnel-Spectroscopic and DFT Investigation

Magnetic Assembly of Soft Robots with Hard Components

Multi-element analysis of single nanoparticles by ICP-MS using quadrupole and time-of-flight technologies

Assessment of cytotoxicity of metal oxide nanoparticles on the basis of fundamental physical-chemical parameters: a robust approach to grouping

Tunneling across SAMs Containing Oligophenyl Groups

A computational view on nanomaterial intrinsic and extrinsic features for nanosafety and sustainability

Gold nano-islands on FTO as plasmonic nanostructures for biosensors

Additive nanoscale embedding of functional nanoparticles on silicon surface

Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

Tunneling behavior of electrified interfaces

Fabrication of Paper‐Templated Structures of Noble Metals

Electrochemical behaviour of nano-faceted Ir(2 1 0)

Active and Non-Active Large-Area Metal-Molecules-Metal Junctions

Bridging the gap between nanoparticles and single crystal surfaces

Die Au(111)-Elektrolyt-Grenzschicht: eine Tunnelspektroskopie- und DFT-Untersuchung

Replacing AgTSSCH2-R with AgTSO2C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

Assessing occupational risk in designs of production processes of nano-materials

Replacing Ag super(TS)SCH sub(2)-R with Ag super(TS)O sub(2)C-R in EGaIn-Based Tunneling Junctions Does Not Significantly Change Rates of Charge Transport

Tunneling across SAMs Containing Oligophenyl Groups

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga 2 O 3 Top-Interface of Ag TS /S(CH 2 ) n T//Ga 2 O 3 /EGaIn Junctions

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