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Motionless system to measure relative angular emission intensity of decaying or modulated light emitting diodes

Review of scientific instruments, 2014-10, Vol.85 (10)

2014

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Meyer–Neldel rule for charge carrier transport in fullerene devices: A comparative study

Organic electronics, 2011, Vol.12 (1), p.161-168

2011

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Dependence of Meyer-Neldel energy on energetic disorder in organic field effect transistors

Applied physics letters, 2010-05, Vol.96 (21), p.213306-213306-3

2010

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Effect of source-drain electric field on the Meyer-Neldel energy in organic field effect transistors

Applied physics letters, 2011-05, Vol.98 (22), p.223301-223301-3

2011

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Quantitative luminous efficiency determination for large-area light-emitting devices

Applied physics. A, Materials science & processing, 2010-02, Vol.98 (2), p.337-344

2010

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Electric field and grain size dependence of Meyer–Neldel energy in C60 films

Synthetic metals, 2011-09, Vol.161 (17-18), p.1987-1990

2011

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Modification of para-sexiphenyl layer growth by UV induced polarity changes of polymeric substrates

Organic electronics, 2009-04, Vol.10 (2), p.326-332

2009

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GaN: δ -Mg grown by MOVPE: Structural properties and their effect on the electronic and optical behavior

Journal of crystal growth, 2008-01, Vol.310 (1), p.13-21

2008

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Phase-dependent distribution of Fe-rich nanocrystals in MOVPE-grown (Ga,Fe)N

Journal of crystal growth, 2008-07, Vol.310 (14), p.3294-3298

2008

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Magnetic properties of a new spintronic material—GaN:Fe

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-01, Vol.126 (2), p.222-225

2006

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Periodic Mg distribution in GaN:δ-Mg and the effect of annealing on structural and optical properties

Applied surface science, 2008-11, Vol.255 (3), p.731-733

2008

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In situ growth observation of GaN/AlGaN superlattice structures by simultaneous X-ray diffraction and ellipsometry

Journal of crystal growth, 2007-10, Vol.308 (2), p.258-262

2007

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In-situ and real-time monitoring of MOCVD growth of III-nitrides by simultaneous multi-wavelength-ellipsometry and X-ray-diffraction

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1704-1707

2006

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In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithm

Journal of crystal growth, 2007, Vol.298, p.243-245

2007

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Fe onto GaN(0 0 0 1) grown in a full MOVPE process

Journal of crystal growth, 2008-04, Vol.310 (7), p.1772-1776

2008

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Investigation of NiOx-based contacts on p-GaN

Journal of materials science. Materials in electronics, 2008, Vol.19 (8-9), p.855-862

2008

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In situ monitoring of periodic structures during MOVPE of III-nitrides

Journal of crystal growth, 2008-04, Vol.310 (7), p.1607-1613

2008

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Growth and optical properties of α -sexithiopene doped para-sexiphenyl nanofibers

Applied physics letters, 2009-07, Vol.95 (1), p.013306-013306-3

2009

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In situ X-ray diffraction during MOCVD of III-nitrides

Physica status solidi. A, Applications and materials science, 2007-08, Vol.204 (8), p.2798-2803

2007

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Photoluminescence and Hall studies of GaN:Fe and (Ga,Fe)N:Mg layers

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.86-91

2007

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Investigation of NiO x -based contacts on p-GaN

Journal of materials science. Materials in electronics, 2008-09, Vol.19 (8-9), p.855-862

2008

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Para-sexiphenyl-CdSe/ZnS nanocrystal hybrid light emitting diodes

Applied physics letters, 2009-02, Vol.94 (7), p.073505-073505-3

2009

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Fourier analysis applied on in situ laser reflectometry during III-nitride metal organic chemical vapor deposition growth

Journal of applied physics, 2007-05, Vol.101 (9), p.093501-093501-7

2007

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On the effect of periodic Mg distribution in GaN:δ-Mg

Applied physics letters, 2007-04, Vol.90 (14)

2007

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Electric field and grain size dependence of Meyer-Neldel energy in C(60) films

Synthetic metals, 2011-09, Vol.161 (17-18), p.1987-1990

2011

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Motionless system to measure relative angular emission intensity of decaying or modulated light emitting diodes

Meyer–Neldel rule for charge carrier transport in fullerene devices: A comparative study

Dependence of Meyer-Neldel energy on energetic disorder in organic field effect transistors

Effect of source-drain electric field on the Meyer-Neldel energy in organic field effect transistors

Quantitative luminous efficiency determination for large-area light-emitting devices

Electric field and grain size dependence of Meyer–Neldel energy in C60 films

Modification of para-sexiphenyl layer growth by UV induced polarity changes of polymeric substrates

GaN: δ -Mg grown by MOVPE: Structural properties and their effect on the electronic and optical behavior

Phase-dependent distribution of Fe-rich nanocrystals in MOVPE-grown (Ga,Fe)N

Magnetic properties of a new spintronic material—GaN:Fe

Periodic Mg distribution in GaN:δ-Mg and the effect of annealing on structural and optical properties

In situ growth observation of GaN/AlGaN superlattice structures by simultaneous X-ray diffraction and ellipsometry

In-situ and real-time monitoring of MOCVD growth of III-nitrides by simultaneous multi-wavelength-ellipsometry and X-ray-diffraction

In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithm

Fe onto GaN(0 0 0 1) grown in a full MOVPE process

Investigation of NiOx-based contacts on p-GaN

In situ monitoring of periodic structures during MOVPE of III-nitrides

Growth and optical properties of α -sexithiopene doped para-sexiphenyl nanofibers

In situ X-ray diffraction during MOCVD of III-nitrides

Photoluminescence and Hall studies of GaN:Fe and (Ga,Fe)N:Mg layers

Investigation of NiO x -based contacts on p-GaN

Para-sexiphenyl-CdSe/ZnS nanocrystal hybrid light emitting diodes

Fourier analysis applied on in situ laser reflectometry during III-nitride metal organic chemical vapor deposition growth

On the effect of periodic Mg distribution in GaN:δ-Mg

Electric field and grain size dependence of Meyer-Neldel energy in C(60) films

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