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Influence of standoff distance on the structure and properties of carbon coatings deposited by atmospheric plasma jet

Applied surface science, 2011-01, Vol.257 (7), p.2694-2699

2011

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Hydrogen influence on the structure and properties of amorphous hydrogenated carbon films deposited by direct ion beam

Thin solid films, 2008-02, Vol.516 (8), p.1683-1692

2008

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Growth of germanium sulfide by hot wire chemical vapor deposition for nonvolatile memory applications

Journal of non-crystalline solids, 2012-07, Vol.358 (12-13), p.1511-1515

2012

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The role of hydrogen in hot wire chemical vapor deposition of Ge-Sb-Te thin films

Thin solid films, 2011-01, Vol.519 (7), p.2150-2154

2011

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Low energy post-growth irradiation of amorphous hydrogenated carbon (a-C:H) films

Diamond and related materials, 2002-03, Vol.11 (3-6), p.1026-1030

2002

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Laser-induced transformation of a-C:H thin films

Vacuum, 2009-05, Vol.83, p.S152-S154

2009

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Investigation of strontium tantalate thin films for high-k gate dielectric applications

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.1102-1107

2006

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The role of hydrogen in a-C:H films deposited from hexane or acetylene using direct ion beam deposition method

Vacuum, 2004-07, Vol.75 (3), p.261-267

2004

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STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD

Integrated ferroelectrics, 2006-01, Vol.86 (1), p.31-39

2006

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Optimization of electric properties of high- k zirconium dioxide by varying deposition and annealing conditions

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.1037-1042

2006

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Investigation of ion irradiation effects in a-SiXC1-X:H thin films

Vacuum, 2002-11, Vol.68 (3), p.257-261

2002

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Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications

Applied physics letters, 2011-04, Vol.98 (15)

2011

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STRONTIUM BISMUTH TANTALATE THIN FILM DEPOSITION BY LIQUID-DELIVERY MOCVD USING NOVEL LIQUID BISMUTH PRECURSORS

Integrated ferroelectrics, 2006-11, Vol.79 (1), p.195-202

2006

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TRIBUTYLBISMUTH AS A LIQUID BISMUTH PRECURSOR IN AN AVD SYSTEM FOR STRONTIUM BISMUTH TANTALATE THIN FILM DEPOSITION

Integrated ferroelectrics, 2006-01, Vol.84 (1), p.189-196

2006

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Hot wire chemical vapor deposition of germanium selenide thin filmsfor nonvolatile random access memory applications

Applied physics letters, 2011-04, Vol.98 (15), p.151901-151901-3

2011

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ELECTRICAL CHARACTERIZATION OF ZIRCONIUM OXIDE LAYERS GROWN BY LIQUID DELIVERY MOCVD

Integrated ferroelectrics, 2005-01, Vol.74 (1), p.113-122

2005

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CHARACTERISATION OF FERROELECTRIC PbZrXTi1-XO3 (PZT) THIN FILMS PREPARED BY LIQUID-DELIVERY METALORGANIC CHEMICAL VAPOR DEPOSITION

Integrated ferroelectrics, 2006-11, Vol.81 (1), p.289-295

2006

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CHARACTERISATION OF FERROELECTRIC PbZrXTi 1-X O 3 (PZT) THIN FILMS PREPARED BY LIQUID-DELIVERY METALORGANIC CHEMICAL VAPOR DEPOSITION

Integrated ferroelectrics, 2006-11, Vol.81 (1), p.289-295

2006

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Characterisation of ferroelectric PbZr(x)Ti(1-x)O3 (PZT) thin films prepared by liquid-delivery metalorganic chemical vapor deposition

Integrated ferroelectrics, 2006-01, Vol.81, p.289-295

2006

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Liquid-Delivery MOCVD of Strontium Bismuth Tantalate Thin Films Using Sr[Ta(OC2H5)5(OCH2CH2OCH3)]2 and Liquid Bi(CH2CH=CH2)3 as Precursors

Chemical vapor deposition, 2005-04, Vol.11 (4), p.213-218

2005

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Preparation of Strontium Bismuth Tantalate Thin Film by Liquid-Delivery Metalorganic Chemical Vapor Deposition

MRS proceedings, 2004, Vol.830, Article D6.17

2004

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The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2 + O2 and O2 plasmas

Applied surface science, 1999, Vol.138-39, p.581-586

1999

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Investigation of ion irradiation effects in a-Si XC 1−X:H thin films

Vacuum, 2002, Vol.68 (3), p.257-261

2002

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The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2+O2 and O2 plasmas

Applied surface science, 1999-01, Vol.138-139, p.581-586

1999

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The oxidation of surface layers during reactive ion etching of GaAs in CF 2Cl 2+O 2 and O 2 plasmas

Applied surface science, 1999, Vol.138, p.581-586

1999

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Influence of standoff distance on the structure and properties of carbon coatings deposited by atmospheric plasma jet

Hydrogen influence on the structure and properties of amorphous hydrogenated carbon films deposited by direct ion beam

Growth of germanium sulfide by hot wire chemical vapor deposition for nonvolatile memory applications

The role of hydrogen in hot wire chemical vapor deposition of Ge-Sb-Te thin films

Low energy post-growth irradiation of amorphous hydrogenated carbon (a-C:H) films

Laser-induced transformation of a-C:H thin films

Investigation of strontium tantalate thin films for high-k gate dielectric applications

The role of hydrogen in a-C:H films deposited from hexane or acetylene using direct ion beam deposition method

STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD

Optimization of electric properties of high- k zirconium dioxide by varying deposition and annealing conditions

Investigation of ion irradiation effects in a-SiXC1-X:H thin films

Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications

STRONTIUM BISMUTH TANTALATE THIN FILM DEPOSITION BY LIQUID-DELIVERY MOCVD USING NOVEL LIQUID BISMUTH PRECURSORS

TRIBUTYLBISMUTH AS A LIQUID BISMUTH PRECURSOR IN AN AVD SYSTEM FOR STRONTIUM BISMUTH TANTALATE THIN FILM DEPOSITION

Hot wire chemical vapor deposition of germanium selenide thin filmsfor nonvolatile random access memory applications

ELECTRICAL CHARACTERIZATION OF ZIRCONIUM OXIDE LAYERS GROWN BY LIQUID DELIVERY MOCVD

CHARACTERISATION OF FERROELECTRIC PbZrXTi1-XO3 (PZT) THIN FILMS PREPARED BY LIQUID-DELIVERY METALORGANIC CHEMICAL VAPOR DEPOSITION

CHARACTERISATION OF FERROELECTRIC PbZrXTi 1-X O 3 (PZT) THIN FILMS PREPARED BY LIQUID-DELIVERY METALORGANIC CHEMICAL VAPOR DEPOSITION

Characterisation of ferroelectric PbZr(x)Ti(1-x)O3 (PZT) thin films prepared by liquid-delivery metalorganic chemical vapor deposition

Liquid-Delivery MOCVD of Strontium Bismuth Tantalate Thin Films Using Sr[Ta(OC2H5)5(OCH2CH2OCH3)]2 and Liquid Bi(CH2CH=CH2)3 as Precursors

Preparation of Strontium Bismuth Tantalate Thin Film by Liquid-Delivery Metalorganic Chemical Vapor Deposition

The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2 + O2 and O2 plasmas

Investigation of ion irradiation effects in a-Si XC 1−X:H thin films

The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2+O2 and O2 plasmas

The oxidation of surface layers during reactive ion etching of GaAs in CF 2Cl 2+O 2 and O 2 plasmas

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