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TILBW Bipolar Power Switching Transistor

Japanese Journal of Applied Physics, 1989-03, Vol.28 (3A), p.L356

1989

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High efficiency, large-area p+- n- n+ silicon solar cells

Solid-state electronics, 1987-04, Vol.30 (4), p.397-401

1987

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On the History of the Workers' Councils

Telos (New York, N.Y.), 1981-07, Vol.1981 (48), p.49-64

Silard, A.

1981

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Developmental experiments on large-area silicon solar cells

Journal of applied physics, 1989-05, Vol.65 (9), p.3680-3686

1989

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Predicting the surge capability of power thyristors

Electronics letters, 1980-01, Vol.16 (9), p.325

1980

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Using silicon dioxide as device engineering parameter in the fabrication of photovoltaic cells through masked ion implantation

Solar energy materials, 1986-10, Vol.14 (2), p.95-105

Silard, Andrei P

1986

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Analysis of ‘anomalous’ I- V characteristics of silicon p + -n-n + photodiodes fabricated by boron implant through SiO 2 layers

International journal of electronics, 1989-02, Vol.66 (2), p.247-261

SILARD, ANDREI P.

1989

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Electro-Optical Characteristics of Shallow Silicon Junctions Fabricated Through Masked Ion Implantation

MRS proceedings, 1985, Vol.45, Article 45

Silard, Andrei P.

1985

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Analysis of 'anomalous' I- V characteristics of silicon p+-n-n+ photodiodes fabricated by boron implant through SiO2 layers

International journal of electronics, 1989-02, Vol.66 (2), p.247-261

SILARD, ANDREI P.

1989

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Effective intrinsic concentration n i e in degenerately doped silicon

Journal of applied physics, 1987-11, Vol.62 (9), p.3813-3815

1987

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Importance of the n-base width in the turn-off performance of TIL GATT's

IEEE electron device letters, 1986-09, Vol.7 (9), p.546-548

Silard, A.P.

1986

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High-temperature physical effects underlying the failure mechanism in thyristors under surge conditions

IEEE transactions on electron devices, 1984-09, Vol.31 (9), p.1334-1340

Silard, A.P.

1984

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The dV/dt capability of double-interdigitated (TIL) thyristors

IEEE electron device letters, 1986-09, Vol.7 (9), p.531-533

Silard, A.P.

1986

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A new expression for breakdown voltage of practical linearly graded p-n junction

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.422-424

1991

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Switching characteristics of 45-A double-interdigitated GTO thyristors

IEEE transactions on electron devices, 1984-09, Vol.31 (9), p.1230-1237

Silard, A.P.

1984

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Achieving the limits of IATO in TIL GTO thyristors

IEEE electron device letters, 1984, Vol.5 (9), p.376-378

SILARD, A. P

1984

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Bifacial solar cells on large-area low-cost silicon wafers

IEEE electron device letters, 1988-01, Vol.9 (1), p.20-22

1988

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Effective intrinsic concentration nie in degenerately doped silicon

Journal of applied physics, 1987-11, Vol.62 (9), p.3813-3815

1987

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High-efficiency, low-cost solar cells on 3-inch silicon wafers

International journal of electronics, 1988-12, Vol.65 (6), p.1131-1136

1988

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Revised theory of linearly-graded silicon junctions: An analytical approach

Solid-state electronics, 1991-02, Vol.34 (2), p.167-172

1991

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Development of preferentially current-generating silicon solar cells

Applied physics letters, 1986-03, Vol.48 (10), p.673-675

1986

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Analysis of electric field distributions in ultra-shallow silicon junctions under thermodynamic equilibrium conditions

International journal of electronics, 1987-10, Vol.63 (4), p.587-600

SILARD, ANDREI P.

1987

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Majority-carrier diffusion coefficients in degenerately doped silicon

Journal of applied physics, 1987-11, Vol.62 (9), p.3809-3812

1987

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Double-interdigitated power transistors

IEEE transactions on electron devices, 1988-08, Vol.35 (8), p.1364-1371

1988

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The importance of the n-base in p-n-p-n-like structures subjected to dV/dt ramps

IEEE electron device letters, 1988-05, Vol.9 (5), p.197-199

1988

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TILBW Bipolar Power Switching Transistor

High efficiency, large-area p+- n- n+ silicon solar cells

On the History of the Workers' Councils

Developmental experiments on large-area silicon solar cells

Predicting the surge capability of power thyristors

Using silicon dioxide as device engineering parameter in the fabrication of photovoltaic cells through masked ion implantation

Analysis of ‘anomalous’ I- V characteristics of silicon p + -n-n + photodiodes fabricated by boron implant through SiO 2 layers

Electro-Optical Characteristics of Shallow Silicon Junctions Fabricated Through Masked Ion Implantation

Analysis of 'anomalous' I- V characteristics of silicon p+-n-n+ photodiodes fabricated by boron implant through SiO2 layers

Effective intrinsic concentration n i e in degenerately doped silicon

Importance of the n-base width in the turn-off performance of TIL GATT's

High-temperature physical effects underlying the failure mechanism in thyristors under surge conditions

The dV/dt capability of double-interdigitated (TIL) thyristors

A new expression for breakdown voltage of practical linearly graded p-n junction

Switching characteristics of 45-A double-interdigitated GTO thyristors

Achieving the limits of IATO in TIL GTO thyristors

Bifacial solar cells on large-area low-cost silicon wafers

Effective intrinsic concentration nie in degenerately doped silicon

High-efficiency, low-cost solar cells on 3-inch silicon wafers

Revised theory of linearly-graded silicon junctions: An analytical approach

Development of preferentially current-generating silicon solar cells

Analysis of electric field distributions in ultra-shallow silicon junctions under thermodynamic equilibrium conditions

Majority-carrier diffusion coefficients in degenerately doped silicon

Double-interdigitated power transistors

The importance of the n-base in p-n-p-n-like structures subjected to dV/dt ramps

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