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A single law for the activation energies of self-diffusion of various cubic metals, intermetallic compounds, ionic crystals and oxides

Physica Status Solidi (b), 2007-04, Vol.244 (4), p.1296-1303

Siethoff, Hans

2007

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The onset of secondary slip in the plastic deformation of tetrahedrally bound semiconductors

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2004-11, Vol.386 (1), p.68-73

Siethoff, Hans

2004

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Correspondence of the plasticity of rocksalt structure ceramics and tetrahedrally coordinated semiconductors

Journal of applied physics, 2003-09, Vol.94 (5), p.3128-3134

Siethoff, Hans

2003

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The onset of secondary slip in the plastic deformation of tetrahedrally bound semiconductors

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2004-11, Vol.386 (1-2), p.68-73

SIETHOFF, Hans

2004

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Elastic and thermal properties of δ-plutonium

Physica Status Solidi (b), 2005-07, Vol.242 (8), p.1606-1609

Siethoff, Hans

2005

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Homopolar band gap and thermal activation parameters of plasticity of diamond and zinc-blende semiconductors

Journal of applied physics, 2000-04, Vol.87 (7), p.3301-3305

Siethoff, Hans

2000

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The deformation regimes of the yield point of silicon

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2001-01, Vol.81 (1), p.145-152

Brion, Hans Siethoff, Hans Georg

2001

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Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2002-05, Vol.82 (7), p.1299-1316

Siethoff, Hans

2002

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Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature regimes

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2002-05, Vol.82 (7), p.1299-1316

Siethoff, Hans

2002

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The interaction of boron and phosphorus with dislocations in silicon

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2003-08, Vol.355 (1), p.311-314

2003

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Debye-temperature–elastic-constants relationship for materials with hexagonal and tetragonal symmetry

Journal of applied physics, 1996-03, Vol.79 (6), p.2968-2974

1996

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Yield point and dislocation mobility in silicon and germanium

Journal of applied physics, 1983-04, Vol.54 (4), p.1816-1820

1983

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A regime of the yield point of silicon at high temperatures

Applied physics letters, 1999-08, Vol.75 (9), p.1234-1236

1999

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Steady-State Deformation of the hcp Metals at High and Intermediate Temperatures

International journal of materials research, 1985-09, Vol.76 (9), p.627-634

1985

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Yield point of as-grown and predeformed GaAs:Zn

Journal of applied physics, 1998-11, Vol.84 (9), p.4885-4890

1998

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The yield point of as-grown and pre-deformed semiconductors

Philosophical magazine letters, 1992-07, Vol.66 (1), p.1-7

Siethoff, Hans

1992

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The yield point of GaAs:Zn pre-deformed in the Peierls regime

Philosophical magazine letters, 2001-03, Vol.81 (3), p.165-172

2001

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Plasticity of undoped GaAs deformed under liquid encapsulation

Journal of applied physics, 1990-04, Vol.67 (8), p.3673-3680

1990

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The effect of a nitrogen atmosphere on the lower yield point of silicon

Philosophical magazine letters, 1988-09, Vol.58 (3), p.129-133

Siethoff, Hans

1988

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The deformation regimes of the yield point of silicon

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2001-01, Vol.81 (1), p.145-152

2001

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Change in Steady-State Deformation Mechanism of FCC Metals at Intermediate Temperatures

International journal of materials research, 1986-08, Vol.77 (8), p.481-488

Siethoff, Hans

1986

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Die Streckgrenze von Silizium und Silizium-Germanium-Mischkristallen

Materials science and engineering, 1969-05, Vol.4 (2), p.155-162

Siethoff, Hans

1969

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The yield point of In-doped GaAs between 500 and 900°C

Journal of applied physics, 1993-07, Vol.74 (1), p.153-158

1993

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The Effect of Obstacles on Steady-State Deformation of hcp Metals / Der Einfluß von Hindernissen auf die stationäre Verformung von hexagonalen Metallen

International journal of materials research, 1989-09, Vol.80 (9), p.607-613

1989

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Cross-slip in the high-temperature deformation of germanium, silicon and indium antimonide

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1983-01, Vol.47 (5), p.657-669

Siethoff, Hans

1983

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A single law for the activation energies of self-diffusion of various cubic metals, intermetallic compounds, ionic crystals and oxides

The onset of secondary slip in the plastic deformation of tetrahedrally bound semiconductors

Correspondence of the plasticity of rocksalt structure ceramics and tetrahedrally coordinated semiconductors

The onset of secondary slip in the plastic deformation of tetrahedrally bound semiconductors

Elastic and thermal properties of δ-plutonium

Homopolar band gap and thermal activation parameters of plasticity of diamond and zinc-blende semiconductors

The deformation regimes of the yield point of silicon

Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature

Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature regimes

The interaction of boron and phosphorus with dislocations in silicon

Debye-temperature–elastic-constants relationship for materials with hexagonal and tetragonal symmetry

Yield point and dislocation mobility in silicon and germanium

A regime of the yield point of silicon at high temperatures

Steady-State Deformation of the hcp Metals at High and Intermediate Temperatures

Yield point of as-grown and predeformed GaAs:Zn

The yield point of as-grown and pre-deformed semiconductors

The yield point of GaAs:Zn pre-deformed in the Peierls regime

Plasticity of undoped GaAs deformed under liquid encapsulation

The effect of a nitrogen atmosphere on the lower yield point of silicon

The deformation regimes of the yield point of silicon

Change in Steady-State Deformation Mechanism of FCC Metals at Intermediate Temperatures

Die Streckgrenze von Silizium und Silizium-Germanium-Mischkristallen

The yield point of In-doped GaAs between 500 and 900°C

The Effect of Obstacles on Steady-State Deformation of hcp Metals / Der Einfluß von Hindernissen auf die stationäre Verformung von hexagonalen Metallen

Cross-slip in the high-temperature deformation of germanium, silicon and indium antimonide

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