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Stack of two III-nitride laser diodes interconnected by a tunnel junction

Optics express, 2019-02, Vol.27 (4), p.5784-5791

2019

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Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Optics express, 2022-07, Vol.30 (15), p.27004-27014

2022

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Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Journal of physics. D, Applied physics, 2014-02, Vol.47 (7), p.1-18

2014

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GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Optical and quantum electronics, 2022, Vol.54 (1), Article 62

2022

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Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Applied physics letters, 2018-07, Vol.113 (3)

2018

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III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA0801

2022

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Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Optics express, 2020-11, Vol.28 (23), p.35321-35329

2020

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Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Journal of crystal growth, 2013-03, Vol.367, p.115-121

2013

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Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]

Applied physics letters, 2018-08, Vol.113 (9)

2018

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Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2017-02, Vol.459, p.129-134

2017

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Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

Applied physics letters, 2015-12, Vol.107 (26)

2015

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The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

Applied physics letters, 2011-06, Vol.98 (23), p.231902-231902-3

2011

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Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

Physical review materials, 2018-01, Vol.2 (1), Article 011601

2018

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Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Applied physics. A, Materials science & processing, 2014-06, Vol.115 (3), p.1015-1023

2014

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Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Journal of applied physics, 2011-09, Vol.110 (6), p.063110-063110-7

2011

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Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

Materials science in semiconductor processing, 2019-03, Vol.91, p.387-391

2019

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Determination of gain in AlGaN cladding free nitride laser diodes

Applied physics letters, 2013-08, Vol.103 (6)

2013

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MBE fabrication of III-N-based laser diodes and its development to industrial system

Journal of crystal growth, 2013-09, Vol.378, p.278-282

2013

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High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2015-09, Vol.425, p.398-400

2015

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Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2005-01, Vol.86 (1), p.011114-011114-3

2005

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High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

Applied physics letters, 2005-03, Vol.86 (10)

2005

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InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

2012

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"Aluminum free nitride laser diodes grown by plasma assisted MBE"

2016 74th Annual Device Research Conference (DRC), 2016, p.1-1

2016

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Stack of two III-nitride laser diodes interconnected by a tunnel junction

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]

Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy

Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

Determination of gain in AlGaN cladding free nitride laser diodes

MBE fabrication of III-N-based laser diodes and its development to industrial system

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

"Aluminum free nitride laser diodes grown by plasma assisted MBE"

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