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Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins

Nature (London), 2000-06, Vol.405 (6788), p.767-769

2000

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Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Applied physics letters, 2012-02, Vol.100 (6)

2012

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Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

APL materials, 2014-08, Vol.2 (8), p.086104-086104-6

2014

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Observation of Antiferromagnetic Domains in Epitaxial Thin Films

Science (American Association for the Advancement of Science), 2000-02, Vol.287 (5455), p.1014-1016

2000

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CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

Solid-state electronics, 2012-08, Vol.74, p.71-76

2012

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Optical properties of epitaxial SrHfO3 thin films grown on Si

Journal of applied physics, 2007-11, Vol.102 (10)

2007

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SrHfO3 as gate dielectric for future CMOS technology

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.1869-1873

2007

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An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T176-T177

2015

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IEEE_Xplore

Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si

Applied physics letters, 2003-12, Vol.83 (25), p.5211-5213

2003

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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

Journal of crystal growth, 2013-09, Vol.378, p.109-112

2013

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GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.387-392

2011

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1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1066-1069

2011

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Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

Applied physics letters, 2005-12, Vol.87 (26), p.262905-262905-3

2005

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Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices

Microelectronic engineering, 2009-07, Vol.86 (7), p.1635-1637

2009

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Co-integrating high mobility channels for future CMOS, from substrate to circuits

26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014, p.1-2

2014

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IEEE_Xplore

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2142-2145

2007

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Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

Journal of applied physics, 2003-11, Vol.94 (10), p.6607-6610

2003

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Field-effect transistors with SrHfO3 as gate oxide

Applied physics letters, 2006-07, Vol.89 (5)

2006

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Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit

Applied physics letters, 2011-08, Vol.99 (5)

2011

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Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low D it

Applied physics letters, 2011-08, Vol.99 (5), p.052102-052102-3

2011

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Mobility and Dit distributions for p -channel MOSFETs with HfO 2 /LaGeO x passivating layers on germanium

Journal of applied physics, 2011-12, Vol.110 (11), p.114504-114504-7

2011

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Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistors

Applied physics letters, 2012-02, Vol.100 (6), p.063505-063505-3

2012

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Mobility and Dit distributions for p -channel MOSFETs with HfO2/LaGeO x passivating layers on germanium

Journal of applied physics, 2011-12, Vol.110 (11)

2011

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Solid phase epitaxy of SrTiO3 on (Ba,Sr)O∕Si(100): The relationship between oxygen stoichiometry and interface stability

Journal of applied physics, 2006-04, Vol.99 (8)

2006

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GaAs on 200mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.387-392

2011

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Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

Observation of Antiferromagnetic Domains in Epitaxial Thin Films

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

Optical properties of epitaxial SrHfO3 thin films grown on Si

SrHfO3 as gate dielectric for future CMOS technology

An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch

Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si

Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs

Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices

Co-integrating high mobility channels for future CMOS, from substrate to circuits

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction

Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

Field-effect transistors with SrHfO3 as gate oxide

Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit

Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low D it

Mobility and Dit distributions for p -channel MOSFETs with HfO 2 /LaGeO x passivating layers on germanium

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistors

Mobility and Dit distributions for p -channel MOSFETs with HfO2/LaGeO x passivating layers on germanium

Solid phase epitaxy of SrTiO3 on (Ba,Sr)O∕Si(100): The relationship between oxygen stoichiometry and interface stability

GaAs on 200mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

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