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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Infrared physics & technology, 2020-03, Vol.105, p.103182, Article 103182

2020

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MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Opto-electronics review, 2019-09, Vol.27 (3), p.282-290

2019

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The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

Infrared physics & technology, 2015-11, Vol.73, p.312-315

2015

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Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Infrared physics & technology, 2017-03, Vol.81, p.223-227

2017

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Water --- a source electrically active centres in CdHgTe

Semiconductors, 2023, Vol.57 (2), p.107

2023

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HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.385-391

2011

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Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

Thin solid films, 2010-05, Vol.518 (14), p.3879-3881

2010

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Defects in the crystal structure of [Cd.sub.x][Hg.sub.1 - x]Te layers grown on the Si substrates

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.926

2011

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Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

Journal of crystal growth, 2005-02, Vol.274 (3-4), p.339-346

2005

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Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

Opto-electronics review, 2010, Vol.18 (3), p.259-262

2010

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The electrical characteristics of MBE n-[Hg.sub.1-x][Cd.sub.x]Te MIS structures with sharp inhomogeneities in composition

Russian physics journal, 2011-08, Vol.54 (3), p.263

2011

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Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

Opto-electronics review, 2010, Vol.18 (3), p.263-266

2010

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320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Opto-electronics review, 2010, Vol.18 (3), p.236-240

2010

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Study of the Defect Structure of Hg 1-x Cd x Te Films by Ion Milling

Acta physica Polonica, A, 2008-11, Vol.114 (5), p.1293-1301

2008

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In situ ellipsometry for control of Hg1−xCdxTe nanolayer structures and inhomogeneous layers during MBE growth

Thin solid films, 2004-05, Vol.455-456, p.688-694

2004

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Investigation and characterization of Hg1−Cd Te epilayers

Journal of alloys and compounds, 2004-11, Vol.382 (1-2), p.288-291

2004

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In situ ellipsometry for control of Hg 1− xCd xTe nanolayer structures and inhomogeneous layers during MBE growth

Thin solid films, 2004, Vol.455, p.688-694

2004

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Linear HgCdTe IR FPA 288×4 with bidirectional scanning

Opto-electronics review, 2010, Vol.18 (3), p.332-337

2010

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HgCdTe quantum wells grown by molecular beam epitaxy

Semiconductor physics, quantum electronics, and optoelectronics, 2008-01, Vol.10 (4), p.47-53

2008

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Growth of Hg 1-xCd xTe nanostructures by molecular beam epitaxy with ellipsometric control

International journal of nanotechnology., 2006, Vol.3 (1), p.120

2006

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Investigation and characterization of Hg1−xCdxTe epilayers

Journal of alloys and compounds, 2004-11, Vol.382 (1-2), p.288-291

2004

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Molecular beam epitaxy of high quality Hg1 − xCdxTe films with control of the composition distribution

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.1161-1166

1996

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Peculiarities of the MBE growth physics and technology of narrow-gap II–VI compounds

Thin solid films, 1997-09, Vol.306 (2), p.253-265

1997

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The heteroepitaxy of II–VI compounds on the non-isovalent substrates (ZnTe/Si)

Thin solid films, 2000-05, Vol.367 (1-2), p.203-209

2000

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A study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

Applied surface science, 1999-04, Vol.142 (1), p.485-489

1999

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Water --- a source electrically active centres in CdHgTe

HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

Defects in the crystal structure of [Cd.sub.x][Hg.sub.1 - x]Te layers grown on the Si substrates

Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

The electrical characteristics of MBE n-[Hg.sub.1-x][Cd.sub.x]Te MIS structures with sharp inhomogeneities in composition

Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Study of the Defect Structure of Hg 1-x Cd x Te Films by Ion Milling

In situ ellipsometry for control of Hg1−xCdxTe nanolayer structures and inhomogeneous layers during MBE growth

Investigation and characterization of Hg1−Cd Te epilayers

In situ ellipsometry for control of Hg 1− xCd xTe nanolayer structures and inhomogeneous layers during MBE growth

Linear HgCdTe IR FPA 288×4 with bidirectional scanning

HgCdTe quantum wells grown by molecular beam epitaxy

Growth of Hg 1-xCd xTe nanostructures by molecular beam epitaxy with ellipsometric control

Investigation and characterization of Hg1−xCdxTe epilayers

Molecular beam epitaxy of high quality Hg1 − xCdxTe films with control of the composition distribution

Peculiarities of the MBE growth physics and technology of narrow-gap II–VI compounds

The heteroepitaxy of II–VI compounds on the non-isovalent substrates (ZnTe/Si)

A study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

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