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Radiofrequency power effects on the optical and structural properties of hydrogenated silicon films prepared by radiofrequency magnetron sputtering

Thin solid films, 2013-10, Vol.545, p.245-250

2013

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Surface roughness and optoelectronic properties of intrinsic and doped nc-Si:H prepared by Rf-magnetron sputtering at low temperature

Materials science in semiconductor processing, 2014-10, Vol.26, p.231-237

2014

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Ellipsometric and Raman spectroscopic study of nanocrystalline silicon thin films prepared by a rf magnetron sputtering technique

Journal of physics. Condensed matter, 2008-11, Vol.20 (44), p.445221-445221 (6)

2008

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Effects of ion bombardment on the structural and optical properties in hydrogenated silicon thin films

Thin solid films, 2015-11, Vol.594, p.138-146

2015

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Optoelectronic properties of hydrogenated amorphous germanium deposited by rf-PECVD as a function of applied rf-power

Journal of physics. Condensed matter, 2005-08, Vol.17 (33), p.5149-5158

2005

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Optical and structural properties of hydrogenated silicon films prepared by rf-magnetron sputtering at low growth temperatures: Study as function of argon gas dilution

Journal of non-crystalline solids, 2012-02, Vol.358 (4), p.854-859

2012

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Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies

Journal of non-crystalline solids, 2008-05, Vol.354 (19-25), p.2291-2295

2008

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Deposition of nanocryctalline silicon thin films: Effect of total pressure and substrate temperature

Thin solid films, 2008-04, Vol.516 (12), p.3965-3970

2008

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Determination of absorption coefficients from the ratio between absorptance and transmittance measurements of weakly absorbing films

Optics communications, 2000-05, Vol.178 (1), p.111-116

2000

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Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si1−xGex:H with large x

Journal of physics. Condensed matter, 2007-09, Vol.19 (35), p.356215-356215 (14)

2007

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Low temperature growth of nanocrystalline silicon carbide films

AIP Conference Proceedings, 2013, Vol.1569 (1), p.260

2013

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Numerical study of thermal generation current in a-Si : H based schottky barrier

Solid state communications, 1998-11, Vol.108 (11), p.813-816

1998

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Hydrogen related crystallization in silicon carbide thin films

Optik (Stuttgart), 2018-02, Vol.154, p.459-466

2018

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Density of states in hydrogenated amorphous germanium seen via optical absorption spectra

Solid state communications, 2003-06, Vol.126 (12), p.675-680

2003

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The enhancement of near infrared light trapping in solar cells with backside crystalline silicon gratings: Realization and characterization investigation

Optik (Stuttgart), 2020-01, Vol.200, p.163143, Article 163143

2020

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Optical, structural evolution and surface morphology studies of hydrogenated silicon films synthesized by rf-magnetron sputtering: Effects of pressure and radio frequency power at low temperature

Optik (Stuttgart), 2018-09, Vol.168, p.65-76

2018

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Comparative studies of the influence of hydrogen incorporation on the electronic properties of a-Ge:H films prepared by two different techniques

Canadian journal of physics, 1999-09, Vol.77 (9), p.659-666

1999

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Crystalline Volume Fraction Effect on the Electronic Properties of Hydrogenated Microcrystalline Silicon (c-Si:H Investigated by Ellipsometry and AMPS-1D Simulation

Journal of Nano- and Electronic Physics, 2019, Vol.11 (1), p.1014-1014-5

2019

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Monte-Carlo simulation of hydrogenated amorphous silicon growth

Journal of the Association of Arab Universities for Basic & Applied Sciences, 2012-10, Vol.12 (1), p.11-16

2012

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Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si 1− x Ge x :H with large x

Journal of physics. Condensed matter, 2007-09, Vol.19 (35), p.356215

2007

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Structural properties of intrinsic and doped nc-Si:H films prepared by RFMS: Study as function of deposition time and substrate temperature

Physica status solidi. C, 2010-04, Vol.7 (3-4), p.565-570

2010

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Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si1-x Gex:H with large x

Journal of physics. Condensed matter, 2007, Vol.19 (35)

2007

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Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

Superlattices and microstructures, 2016-12, Vol.100, p.228-236

2016

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New Numerical Simulation of the Optical Behavior of Nanocrystalline Silicon Thin Films

Physics procedia, 2009, Vol.2 (3), p.655-663

2009

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Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

Journal of modern physics, 2011, Vol.2 (9), p.1030-1036

2011

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Radiofrequency power effects on the optical and structural properties of hydrogenated silicon films prepared by radiofrequency magnetron sputtering

Surface roughness and optoelectronic properties of intrinsic and doped nc-Si:H prepared by Rf-magnetron sputtering at low temperature

Ellipsometric and Raman spectroscopic study of nanocrystalline silicon thin films prepared by a rf magnetron sputtering technique

Effects of ion bombardment on the structural and optical properties in hydrogenated silicon thin films

Optoelectronic properties of hydrogenated amorphous germanium deposited by rf-PECVD as a function of applied rf-power

Optical and structural properties of hydrogenated silicon films prepared by rf-magnetron sputtering at low growth temperatures: Study as function of argon gas dilution

Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering: Structural and optical studies

Deposition of nanocryctalline silicon thin films: Effect of total pressure and substrate temperature

Determination of absorption coefficients from the ratio between absorptance and transmittance measurements of weakly absorbing films

Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si1−xGex:H with large x

Low temperature growth of nanocrystalline silicon carbide films

Numerical study of thermal generation current in a-Si : H based schottky barrier

Hydrogen related crystallization in silicon carbide thin films

Density of states in hydrogenated amorphous germanium seen via optical absorption spectra

The enhancement of near infrared light trapping in solar cells with backside crystalline silicon gratings: Realization and characterization investigation

Optical, structural evolution and surface morphology studies of hydrogenated silicon films synthesized by rf-magnetron sputtering: Effects of pressure and radio frequency power at low temperature

Comparative studies of the influence of hydrogen incorporation on the electronic properties of a-Ge:H films prepared by two different techniques

Crystalline Volume Fraction Effect on the Electronic Properties of Hydrogenated Microcrystalline Silicon (c-Si:H Investigated by Ellipsometry and AMPS-1D Simulation

Monte-Carlo simulation of hydrogenated amorphous silicon growth

Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si 1− x Ge x :H with large x

Structural properties of intrinsic and doped nc-Si:H films prepared by RFMS: Study as function of deposition time and substrate temperature

Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si1-x Gex:H with large x

Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

New Numerical Simulation of the Optical Behavior of Nanocrystalline Silicon Thin Films

Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

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