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Steep-slope hysteresis-free negative capacitance MoS2 transistors

Nature nanotechnology, 2017-12, Vol.13 (1), p.24-28

2017

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A critical review of recent progress on negative capacitance field-effect transistors

Applied physics letters, 2019-03, Vol.114 (9)

2019

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Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

Nature nanotechnology, 2020-07, Vol.15 (7), p.585-591

2020

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High-Performance Depletion/Enhancement-ode \beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

IEEE electron device letters, 2017-01, Vol.38 (1), p.103-106

2017

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Ultra-wide bandgap semiconductor Ga2O3 power diodes

Nature communications, 2022-07, Vol.13 (1), p.3900-3900, Article 3900

2022

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Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

Applied physics letters, 2019-08, Vol.115 (7)

2019

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Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

ACS nano, 2018-07, Vol.12 (7), p.6700-6705

2018

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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Nano letters, 2021-01, Vol.21 (1), p.500-506

2021

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Al2O3/ \beta -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

IEEE electron device letters, 2016-11, Vol.37 (11), p.1411-1414

2016

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Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor

Nano letters, 2018-06, Vol.18 (6), p.3682-3687

2018

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Overview and outlook of emerging non-volatile memories

MRS bulletin, 2021-10, Vol.46 (10), p.946-958

2021

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Performance Potential and Limit of MoS2 Transistors

Advanced materials (Weinheim), 2015-03, Vol.27 (9), p.1547-1552

2015

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Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances

IEEE electron device letters, 2013-10, Vol.34 (10), p.1328-1330

2013

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The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights

IEEE electron device letters, 2014-07, Vol.35 (7), p.795-797

2014

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Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in a Ferroelectric/Dielectric Stack

ACS applied electronic materials, 2019-05, Vol.1 (5), p.745-751

2019

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Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

Nano letters, 2013-06, Vol.13 (6), p.2640-2646

2013

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Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid-State Refrigeration

ACS nano, 2019-08, Vol.13 (8), p.8760-8765

2019

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Polarization switching in Hf0.5Zr0.5O2-dielectric stack: The role of dielectric layer thickness

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

Nature electronics, 2020-03, Vol.3 (3), p.141-147

2020

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A tunable ferroelectric based unreleased RF resonator

Microsystems & nanoengineering, 2020-01, Vol.6 (1), p.8-8, Article 8

2020

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Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Nano research, 2019-03, Vol.12 (3), p.669-674

2019

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Germanium nMOSFETs With Recessed Channel and S/D: Contact, Scalability, Interface, and Drain Current Exceeding 1 A/mm

IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1419-1426

2015

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Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3049-3057

2016

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High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric

IEEE electron device letters, 2016-05, Vol.37 (5), p.556-559

2016

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Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3516-3523

2015

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Steep-slope hysteresis-free negative capacitance MoS2 transistors

A critical review of recent progress on negative capacitance field-effect transistors

Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

High-Performance Depletion/Enhancement-ode \beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

Al2O3/ \beta -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor

Overview and outlook of emerging non-volatile memories

Performance Potential and Limit of MoS2 Transistors

Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances

The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights

Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in a Ferroelectric/Dielectric Stack

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid-State Refrigeration

Polarization switching in Hf0.5Zr0.5O2-dielectric stack: The role of dielectric layer thickness

Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

A tunable ferroelectric based unreleased RF resonator

Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Germanium nMOSFETs With Recessed Channel and S/D: Contact, Scalability, Interface, and Drain Current Exceeding 1 A/mm

Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling

High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric

Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs

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