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Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene

Journal of applied physics, 2021-02, Vol.129 (5)

2021

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Pandemic Equation and COVID-19 Evolution

Encyclopedia (Basel, Switzerland), 2024-04, Vol.4 (2), p.682-694

Shur, Michael

2024

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Terahertz Plasmonic Technology

IEEE sensors journal, 2021-06, Vol.21 (11), p.12752-12763

Shur, Michael S.

2021

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Far-infrared photodetectors based on graphene/black-AsP heterostructures

Optics express, 2020-01, Vol.28 (2), p.2480-2498

2020

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p-Diamond, Si, GaN, and InGaAs TeraFETs

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4858-4865

2020

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Deep-Ultraviolet Light-Emitting Diodes

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.12-25

2010

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TeraFET terahertz detectors with spatially non-uniform gate capacitances

Applied physics letters, 2021-10, Vol.119 (16)

2021

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Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Sensors (Basel, Switzerland), 2021-11, Vol.21 (23), p.7907

2021

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Ultrashort Pulse Detection and Response Time Analysis Using Plasma-Wave Terahertz Field-Effect Transistors

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.903-910

2021

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Selective Gas Sensing with a Single Pristine Graphene Transistor

Nano letters, 2012-05, Vol.12 (5), p.2294-2298

2012

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Erratum: “Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene” [J. Appl. Phys. 129, 053102 (2021)]

Journal of applied physics, 2021-03, Vol.129 (11)

2021

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Cubic boron nitride as a material for future electron device applications: A comparative analysis

Applied physics letters, 2022-03, Vol.120 (12)

2022

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Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies

Optics letters, 2016-11, Vol.41 (22), p.5333-5336

2016

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Compact Terahertz SPICE/ADS Model

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2496-2501

2019

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Compact Terahertz SPICE Model: Effects of Drude Inductance and Leakage

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5350-5356

2018

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Coulomb Drag by Injected Ballistic Carriers in Graphene n+−i−n−n+ Structures: Doping and Temperature Effects

Physica status solidi. A, Applications and materials science, 2021-11, Vol.218 (21), p.n/a

2021

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The transition between the collision-dominated and ballistic electron transport regimes as the device length is reduced: A continuum analysis

Journal of applied physics, 2024-07, Vol.136 (3)

2024

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Plasmons in Ballistic Nanostructures With Stubs: Transmission Line Approach

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.126-131

2019

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Wide band gap semiconductor technology: State-of-the-art

Solid-state electronics, 2019-05, Vol.155, p.65-75

Shur, Michael

2019

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Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field‐Effect Transistors and Lateral Diodes

Physica status solidi. A, Applications and materials science, 2022-01, Vol.219 (1), p.n/a

2022

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The impact of device length on the electron’s effective mobility

Journal of applied physics, 2023-09, Vol.134 (12)

2023

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Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis

Journal of applied physics, 2020-11, Vol.128 (18)

2020

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Synthetic Turbulence Generators for RANS-LES Interfaces in Zonal Simulations of Aerodynamic and Aeroacoustic Problems

Flow, turbulence and combustion, 2014-07, Vol.93 (1), p.63-92

2014

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Frequency to digital conversion using Si TeraFETs

Optical engineering, 2021-02, Vol.60 (8)

2021

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Potential Amplification Mechanism of Rotor–Stator-Interaction Noise via Spiral-Poiseuille-Flow Instability

AIAA journal, 2022-04, Vol.60 (4), p.2441-2457

2022

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Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene

Pandemic Equation and COVID-19 Evolution

Terahertz Plasmonic Technology

Far-infrared photodetectors based on graphene/black-AsP heterostructures

p-Diamond, Si, GaN, and InGaAs TeraFETs

Deep-Ultraviolet Light-Emitting Diodes

TeraFET terahertz detectors with spatially non-uniform gate capacitances

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Ultrashort Pulse Detection and Response Time Analysis Using Plasma-Wave Terahertz Field-Effect Transistors

Selective Gas Sensing with a Single Pristine Graphene Transistor

Erratum: “Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene” [J. Appl. Phys. 129, 053102 (2021)]

Cubic boron nitride as a material for future electron device applications: A comparative analysis

Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies

Compact Terahertz SPICE/ADS Model

Compact Terahertz SPICE Model: Effects of Drude Inductance and Leakage

Coulomb Drag by Injected Ballistic Carriers in Graphene n+−i−n−n+ Structures: Doping and Temperature Effects

The transition between the collision-dominated and ballistic electron transport regimes as the device length is reduced: A continuum analysis

Plasmons in Ballistic Nanostructures With Stubs: Transmission Line Approach

Wide band gap semiconductor technology: State-of-the-art

Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field‐Effect Transistors and Lateral Diodes

The impact of device length on the electron’s effective mobility

Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis

Synthetic Turbulence Generators for RANS-LES Interfaces in Zonal Simulations of Aerodynamic and Aeroacoustic Problems

Frequency to digital conversion using Si TeraFETs

Potential Amplification Mechanism of Rotor–Stator-Interaction Noise via Spiral-Poiseuille-Flow Instability

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