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Fundamental Formulation for Plasmonic Nanolasers

IEEE journal of quantum electronics, 2009-08, Vol.45 (8), p.1014-1023

2009

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Theoretical and experimental study of optical gain, refractive index change, and linewidth enhancement factor of p-doped quantum-dot lasers

IEEE journal of quantum electronics, 2006-09, Vol.42 (9), p.942-952

2006

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Whispering Gallery Mode Lasing from Zinc Oxide Hexagonal Nanodisks

ACS nano, 2010-06, Vol.4 (6), p.3270-3276

2010

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Theory of optical gain of Ge-SixGeySn1-x-y quantum-well lasers

IEEE journal of quantum electronics, 2007-03, Vol.43 (3-4), p.249-256

2007

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Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Variable optical buffer using slow light in semiconductor nanostructures

Proceedings of the IEEE, 2003-11, Vol.91 (11), p.1884-1897

2003

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Quantum Efficiency Analysis of InAs-GaSb Type-II Superlattice Photodiodes

IEEE journal of quantum electronics, 2009-06, Vol.45 (6), p.737-743

2009

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Small-Signal Cross-Gain Modulation of Quantum-Dot Semiconductor Optical Amplifiers

IEEE photonics technology letters, 2006-12, Vol.18 (23), p.2538-2540

2006

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Strain-Balanced GezSn1-z-SixGeySn1-x-y Multiple-Quantum-Well Lasers

IEEE journal of quantum electronics, 2010-12, Vol.46 (11-12), p.1813-1820

2010

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InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition

Applied physics letters, 2010-06, Vol.96 (25)

2010

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Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers

Applied physics letters, 1998-06, Vol.72 (24), p.3103-3105

1998

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Slow Light Based on Coherent Population Oscillation in Quantum Dots at Room Temperature

IEEE journal of quantum electronics, 2007-02, Vol.43 (2), p.196-205

2007

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Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition

Applied physics letters, 2011-07, Vol.99 (1), p.011109-011109-3

2011

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InGaN/GaN Quantum Dot Red (\lambda=630~) Laser

IEEE journal of quantum electronics, 2013-11, Vol.49 (11), p.923-931

2013

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Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers

IEEE photonics technology letters, 2006-05, Vol.18 (9), p.1022-1024

2006

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Theory of high-speed nanolasers and nanoLEDs

Optics express, 2012-07, Vol.20 (15), p.16450

2012

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Variable group delay and pulse reshaping of high bandwidth optical signals

IEEE journal of quantum electronics, 2005-06, Vol.41 (6), p.885-891

2005

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Electronic and Optical Properties of a-and m-Plane Wurtzite InGaN-GaN Quantum Wells

IEEE journal of quantum electronics, 2007-12, Vol.43 (11-12), p.1175-1182

2007

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Metal-cavity surface-emitting microlaser at room temperature

Applied physics letters, 2010-06, Vol.96 (25), p.251101-251101-3

2010

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High optical gain of I–VII semiconductor quantum wells for efficient light-emitting devices

Applied physics letters, 2013-03, Vol.102 (12)

2013

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Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach

Journal of applied physics, 2000-11, Vol.88 (10), p.5554-5561

2000

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Ultraslow light ( < 200 m ∕ s ) propagation in a semiconductor nanostructure

Applied physics letters, 2005-10, Vol.87 (17), p.171102-171102-3

2005

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Electron spin polarization induced by linearly polarized light in a (110) GaAs quantum-well waveguide

Physical review letters, 2009-05, Vol.102 (20), p.206604-206604, Article 206604

2009

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A surface-emitting 3D metal-nanocavity laser: proposal and theory

Optics express, 2011-07, Vol.19 (14), p.13225-13244

2011

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Metal-cavity surface-emitting microlaser with hybrid metal-DBR reflectors

Optics letters, 2011-07, Vol.36 (13), p.2447

2011

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Fundamental Formulation for Plasmonic Nanolasers

Theoretical and experimental study of optical gain, refractive index change, and linewidth enhancement factor of p-doped quantum-dot lasers

Whispering Gallery Mode Lasing from Zinc Oxide Hexagonal Nanodisks

Theory of optical gain of Ge-SixGeySn1-x-y quantum-well lasers

Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control

Variable optical buffer using slow light in semiconductor nanostructures

Quantum Efficiency Analysis of InAs-GaSb Type-II Superlattice Photodiodes

Small-Signal Cross-Gain Modulation of Quantum-Dot Semiconductor Optical Amplifiers

Strain-Balanced GezSn1-z-SixGeySn1-x-y Multiple-Quantum-Well Lasers

InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition

Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers

Slow Light Based on Coherent Population Oscillation in Quantum Dots at Room Temperature

Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition

InGaN/GaN Quantum Dot Red (\lambda=630~) Laser

Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers

Theory of high-speed nanolasers and nanoLEDs

Variable group delay and pulse reshaping of high bandwidth optical signals

Electronic and Optical Properties of a-and m-Plane Wurtzite InGaN-GaN Quantum Wells

Metal-cavity surface-emitting microlaser at room temperature

High optical gain of I–VII semiconductor quantum wells for efficient light-emitting devices

Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach

Ultraslow light ( < 200 m ∕ s ) propagation in a semiconductor nanostructure

Electron spin polarization induced by linearly polarized light in a (110) GaAs quantum-well waveguide

A surface-emitting 3D metal-nanocavity laser: proposal and theory

Metal-cavity surface-emitting microlaser with hybrid metal-DBR reflectors

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