UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 167

Sortiert nach

Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials

Applied physics letters, 2016-05, Vol.108 (22)

2016

Link zum Volltext

Verfügbarkeit prüfen

GaSb-based heterostructure with buried vacuum pocket photonic crystal layer

Electronics letters, 2020-04, Vol.56 (8), p.388-390

2020

Link zum Volltext

Verfügbarkeit prüfen

InAsSb-based heterostructures for infrared light modulation

Applied physics letters, 2019-08, Vol.115 (8)

2019

Link zum Volltext

Verfügbarkeit prüfen

Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m

Semiconductor science and technology, 2020-02, Vol.35 (2), p.25016

2020

Link zum Volltext

Verfügbarkeit prüfen

Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K

Electronics letters, 2010-10, Vol.46 (21), p.1455-1457

2010

Link zum Volltext

Verfügbarkeit prüfen

Lattice parameter engineering for III–V long wave infrared photonics

Electronics letters, 2015-09, Vol.51 (19), p.1521-1522

2015

Link zum Volltext

Verfügbarkeit prüfen

Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys

Journal of physics. D, Applied physics, 2016-02, Vol.49 (10)

2016

Link zum Volltext

Verfügbarkeit prüfen

Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb

Journal of applied physics, 2016-06, Vol.119 (21)

2016

Link zum Volltext

Verfügbarkeit prüfen

Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 [mu]m

Electronics letters, 2016-05, Vol.52 (10), p.857-859

2016

Link zum Volltext

Verfügbarkeit prüfen

Distributed feedback 3.27 mu m diode lasers with continuous-wave output power above 15 mW at room temperature

Electronics letters, 2014-09, Vol.50 (19), p.1378-1378

2014

Link zum Volltext

Verfügbarkeit prüfen

Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm

Electronics letters, 2016-05, Vol.52 (10), p.857-859

2016

Link zum Volltext

Verfügbarkeit prüfen

AlInAsSb for M-LWIR detectors

Journal of crystal growth, 2015-09, Vol.425, p.357-359

2015

Link zum Volltext

Verfügbarkeit prüfen

Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching

Electronics letters, 2017-01, Vol.53 (1), p.40-42

2017

Link zum Volltext

Verfügbarkeit prüfen

Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous-wave output power

Electronics letters, 2013-05, Vol.49 (10), p.667-669

2013

Link zum Volltext

Verfügbarkeit prüfen

Highly efficient holmium fibre laser diode pumped at 1.94 μm

Electronics letters, 2011-09, Vol.47 (19), p.1089-1090

2011

Link zum Volltext

Verfügbarkeit prüfen

Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature

Electronics letters, 2014-09, Vol.50 (19), p.1378-1380

2014

Link zum Volltext

Verfügbarkeit prüfen

Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

Journal of physics. Conference series, 2017-11, Vol.917 (6), p.62027

2017

Link zum Volltext

Verfügbarkeit prüfen

Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12017

2017

Link zum Volltext

Verfügbarkeit prüfen

Diode lasers emitting at 3 μm with 300 mW of continuous-wave output power

Electronics letters, 2009-08, Vol.45 (18), p.942-943

2009

Link zum Volltext

Verfügbarkeit prüfen

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

Applied physics letters, 2002-10, Vol.81 (17), p.3146-3148

2002

Link zum Volltext

Verfügbarkeit prüfen

High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

Applied physics letters, 2003-09, Vol.83 (10), p.1926-1928

2003

Link zum Volltext

Verfügbarkeit prüfen

Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12148

2016

Link zum Volltext

Verfügbarkeit prüfen

Mid-infrared photoluminescence from structures with InAs GaSb type II quantum wells

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12078, Article 012078

2015

Link zum Volltext

Verfügbarkeit prüfen

Type-I Diode Lasers for Spectral Region Above 3 μm

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1426-1434

2011

Link zum Volltext
IEEE_Xplore

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

IEEE journal of quantum electronics, 2008-12, Vol.44 (12), p.1204-1210

2008

Link zum Volltext
IEEE_Xplore

1 – 25 von 167

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(125)
Mit Volltextzugriff
(163)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(64)
Physics
(63)
Physical Sciences
(55)
Physics, Applied
(41)
Technology
(38)
Engineering
(36)
Engineering, Electrical & Electronic
(35)
Diode Lasers
(33)
Lasers
(32)
Optics
(30)
Semiconductor Lasers
(28)
Gas Lasers
(22)
Quantum Wells
(22)
Waveguide Lasers
(18)
Laser Modes
(17)
Exact Sciences And Technology
(16)
Materials Science
(16)
Quantum Well Lasers
(16)
Gasb
(15)
Photoluminescence
(14)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials

GaSb-based heterostructure with buried vacuum pocket photonic crystal layer

InAsSb-based heterostructures for infrared light modulation

Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m

Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K

Lattice parameter engineering for III–V long wave infrared photonics

Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys

Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb

Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 [mu]m

Distributed feedback 3.27 mu m diode lasers with continuous-wave output power above 15 mW at room temperature

Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm

AlInAsSb for M-LWIR detectors

Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching

Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous-wave output power

Highly efficient holmium fibre laser diode pumped at 1.94 μm

Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature

Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination

Diode lasers emitting at 3 μm with 300 mW of continuous-wave output power

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

Mid-infrared photoluminescence from structures with InAs GaSb type II quantum wells

Type-I Diode Lasers for Spectral Region Above 3 μm

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

Suchergebnisse filtern