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High Thermal Conductivity of Bulk GaN Single Crystal: An Accurate Experimental Determination

JETP letters, 2020-07, Vol.112 (2), p.106-111

2020

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Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1369-1376

2016

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Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1665-1670

2015

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Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Semiconductors (Woodbury, N.Y.), 2006-05, Vol.40 (5), p.605-610

2006

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Hopping conductivity and dielectric relaxation in Schottky barriers on GaN

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1186-1193

2017

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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

Technical physics letters, 2016-11, Vol.42 (11), p.1099-1102

2016

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Amorphous carbon buffer layers for separating free gallium nitride films

Technical physics letters, 2016-11, Vol.42 (11), p.1076-1078

2016

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Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.127-134

2013

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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

Semiconductors (Woodbury, N.Y.), 2012-08, Vol.46 (8), p.1032-1039

2012

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.699-704

2016

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Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11), p.1342-1345

2008

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Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11), p.1355-1361

2008

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Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (5), p.594-599

2005

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Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

Semiconductors (Woodbury, N.Y.), 2007-01, Vol.41 (1), p.87-93

2007

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Determination of the coefficient of light attenuation in thin layers of light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2006-03, Vol.40 (3), p.375-378

2006

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Nonuniformity of carrier injection and the degradation of blue LEDs

Semiconductors (Woodbury, N.Y.), 2006-01, Vol.40 (1), p.118-123

2006

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The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (7), p.795-799

2005

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Optical properties of dislocations in silicon crystals

Physica status solidi. A, Applied research, 1993-08, Vol.138 (2), p.681-686

1993

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates

Semiconductors (Woodbury, N.Y.), 2016-05, p.699

2016

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Instability of an elastically compressed silicon surface under etching

Physics of the solid state, 1999-08, Vol.41 (8), p.1295-1297

1999

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Kinetic mechanism of surface instability evolution during etching, corrosion, and growth of elastically stressed solids

Physics of the solid state, 2001-01, Vol.43 (1), p.169-175

2001

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High-voltage optoelectronic voltage converter using a cascade of tunnel-coupled p +-i-n + diodes

Technical physics letters, 1998-11, Vol.24 (11), p.857-859

1998

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A Classification of the Dislocation-Related Photoluminescencence in Silicon

physica status solidi (b), 1992-07, Vol.172 (1), p.53-63

1992

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HIGH THERMAL CONDUCTIVITY OF BULK GAN SINGLE CRYSTAL: AN ACCURATE EXPERIMENTAL DETERMINATION

Pisʹma v žurnal êksperimentalʹnoj i teoretičeskoj fiziki, 2020, Vol.112 (1-2(7)), p.112-113

2020

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Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In{sub 0.2}Ga{sub 0.8}N/GaN quantum wells

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11)

2008

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High Thermal Conductivity of Bulk GaN Single Crystal: An Accurate Experimental Determination

Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Hopping conductivity and dielectric relaxation in Schottky barriers on GaN

The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

Amorphous carbon buffer layers for separating free gallium nitride films

Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells

Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities

Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

Determination of the coefficient of light attenuation in thin layers of light-emitting diodes

Nonuniformity of carrier injection and the degradation of blue LEDs

The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

Optical properties of dislocations in silicon crystals

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates

Instability of an elastically compressed silicon surface under etching

Kinetic mechanism of surface instability evolution during etching, corrosion, and growth of elastically stressed solids

High-voltage optoelectronic voltage converter using a cascade of tunnel-coupled p +-i-n + diodes

A Classification of the Dislocation-Related Photoluminescencence in Silicon

HIGH THERMAL CONDUCTIVITY OF BULK GAN SINGLE CRYSTAL: AN ACCURATE EXPERIMENTAL DETERMINATION

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In{sub 0.2}Ga{sub 0.8}N/GaN quantum wells

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