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Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.99-105

2019

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Defect-Assisted Tunneling via Ni/n-GaN Schottky Barriers

Technical physics, 2024-05, Vol.69 (5), p.1146-1153

2024

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Two modes of HVPE growth of GaN and related macrodefects

Physica status solidi. C, 2013-03, Vol.10 (3), p.468-471

2013

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Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.934-941

2018

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Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes

Applied physics letters, 2013-11, Vol.103 (19)

2013

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Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12203

2020

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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Applied physics letters, 2010-03, Vol.96 (13)

2010

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Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Journal of physics. Conference series, 2019-03, Vol.1199 (1), p.12004

2019

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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.115-121

2017

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Light scattering by dislocations in group-III nitrides

Physica status solidi. A, Applications and materials science, 2005-12, Vol.202 (15), p.2880-2887

2005

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Strain and microstructure variation in grains of CVD diamond film

Diamond and related materials, 1995-09, Vol.4 (10), p.1222-1234

1995

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Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells

Semiconductors (Woodbury, N.Y.), 2014-08, Vol.48 (8), p.1079-1087

2014

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ICP etching of III-nitride based laser structure with Cl 2 –Ar plasma assisted by Si coverplate material

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.687-692

2005

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Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

Physica status solidi. A, Applied research, 1997-11, Vol.164 (1), p.141-144

1997

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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.827-835

2015

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Light Emitting Diode with Charge Asymmetric Resonance Tunneling

Physica status solidi. A, Applied research, 2000-07, Vol.180 (1), p.121-126

2000

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Space-Charge-Limited Efficiency of Electrically-Injected Carriers Localization

Physics of the Solid State, 2023, Vol.65 (1), p.133

2023

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Misfit dislocations and radiative efficiency of InxGa1−xN/GaN quantum wells

Applied surface science, 2000-10, Vol.166 (1-4), p.300-303

2000

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Origin of yellow luminescence from reduced pressure grown bulk GaN crystals

Applied physics. A, Materials science & processing, 2000-07, Vol.71 (1), p.55-58

2000

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Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

MRS Internet journal of nitride semiconductor research, 2001-01, Vol.6, p.1-1

2001

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Defect-related tunneling mechanism of efficiency droop in III-nitridelight-emitting diodes

Applied physics letters, 2010-03, Vol.96 (13), p.133502-133502-3

2010

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Anisotropic polarization of dislocation-related luminescence in thin ZnSe films

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.895-897

1999

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Mechanism of the GaN LED efficiency falloff with increasing current

Semiconductors (Woodbury, N.Y.), 2010-06, Vol.44 (6), p.794-800

2010

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Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystals

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.883-888

1996

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Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

MRS Internet journal of nitride semiconductor research, 2001, Vol.6, p.6-6, Article e6

2001

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Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Defect-Assisted Tunneling via Ni/n-GaN Schottky Barriers

Two modes of HVPE growth of GaN and related macrodefects

Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency

Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Light scattering by dislocations in group-III nitrides

Strain and microstructure variation in grains of CVD diamond film

Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells

ICP etching of III-nitride based laser structure with Cl 2 –Ar plasma assisted by Si coverplate material

Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Light Emitting Diode with Charge Asymmetric Resonance Tunneling

Space-Charge-Limited Efficiency of Electrically-Injected Carriers Localization

Misfit dislocations and radiative efficiency of InxGa1−xN/GaN quantum wells

Origin of yellow luminescence from reduced pressure grown bulk GaN crystals

Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

Defect-related tunneling mechanism of efficiency droop in III-nitridelight-emitting diodes

Anisotropic polarization of dislocation-related luminescence in thin ZnSe films

Mechanism of the GaN LED efficiency falloff with increasing current

Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystals

Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

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