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Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

Solid state communications, 2011-02, Vol.151 (3), p.208-211

2011

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Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Modern electronic materials, 2017-03, Vol.3 (1), p.32-39

2017

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The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells

Journal of crystal growth, 2019-08, Vol.520, p.82-84

2019

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Effects of proton implantation on electrical and recombination properties of n-GaN

Solid-state electronics, 2000-11, Vol.44 (11), p.1971-1983

2000

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Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds

Journal of applied spectroscopy, 2023-03, Vol.90 (1), p.24-28

2023

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Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs

Journal of crystal growth, 2014-09, Vol.401, p.302-304

2014

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Radiation-induced defects in n-type GaN and InN

Physica. B, Condensed matter, 2001-12, Vol.308, p.58-61

2001

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Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

Solid-state electronics, 2001-02, Vol.45 (2), p.255-259

2001

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On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1173-1179

2016

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Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.942-949

2018

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Failure mechanisms in blue InGaN/GaN LEDs for high power operation

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2180-2183

2012

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Two channels of non-radiative recombination in InGaN/GaN LEDs

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4896-4898

2009

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Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells

Semiconductors (Woodbury, N.Y.), 2011-02, Vol.45 (2), p.221-224

2011

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Behavior of electrically active point defects in irradiated MOCVD n-GaN

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.101-104

1999

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Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.208-212

2012

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Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.415-421

2011

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Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.1101-1105

2010

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Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.462-465

2003

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Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.479-483

2003

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GaSb Applications for Solar Thermophotovoltaic Conversion

Thermophotovoltaic Generation of Electricity (AIP Conference Proceedings Volume 890), 2007, Vol.890, p.139-148

2007

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Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

physica status solidi (b), 1999-11, Vol.216 (1), p.533-536

1999

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Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1108-1112

2003

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Nonradiative recombination dynamics in InGaN/GaN LED defect system

Superlattices and microstructures, 2009-04, Vol.45 (4), p.301-307

2009

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Deep levels studies of AlGaN/GaN superlattices

Solid-state electronics, 2003-04, Vol.47 (4), p.671-676

2003

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New type of defects related to nonuniform distribution of compensating centers in p-GaN films

Solid-state electronics, 2003, Vol.47 (1), p.51-56

2003

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Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells

Effects of proton implantation on electrical and recombination properties of n-GaN

Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds

Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs

Radiation-induced defects in n-type GaN and InN

Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

Failure mechanisms in blue InGaN/GaN LEDs for high power operation

Two channels of non-radiative recombination in InGaN/GaN LEDs

Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells

Behavior of electrically active point defects in irradiated MOCVD n-GaN

Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure

Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN

GaSb Applications for Solar Thermophotovoltaic Conversion

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers

Nonradiative recombination dynamics in InGaN/GaN LED defect system

Deep levels studies of AlGaN/GaN superlattices

New type of defects related to nonuniform distribution of compensating centers in p-GaN films

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