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Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1552-1556

2017

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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1485-1489

2017

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Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1475-1478

2016

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Specific features of the nonradiative relaxation of [Er.sup.3+] ions in epitaxial Si structures

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1586

2014

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Hodographs in diode-structure diagnostics

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1443-1447

2015

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Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1500-1503

2013

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Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon p-n junction

Semiconductors (Woodbury, N.Y.), 2012, Vol.46 (1), p.130-135

2012

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High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4593-4596

2009

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Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE-grown Si:Er/Si diode structures

Physica. E, Low-dimensional systems & nanostructures, 2009-05, Vol.41 (6), p.899-901

2009

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Electroluminescence at a wavelength of 1.54 µm in Si:Er/Si structures consisting of a number of p-n junctions

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1430

2011

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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Thin solid films, 2008-11, Vol.517 (1), p.398-400

2008

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Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes [p.sup.+]/[n.sup.+]/n-Si:Er

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1486

2010

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Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1556-1560

2006

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Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Physica. E, Low-dimensional systems & nanostructures, 2009-05, Vol.41 (6), p.935-938

2009

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Electroluminescence at a wavelength of 1.5 µm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

Semiconductors (Woodbury, N.Y.), 2010-12, Vol.44 (12), p.1597

2010

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Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-01, Vol.146 (1), p.256-259

2008

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Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2011-01, Vol.45 (1), p.130-133

2011

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Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-12, Vol.105 (1), p.70-73

2003

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Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.769-772

2003

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Optical Er-doping of Si during sublimational molecular beam epitaxy

Journal of crystal growth, 1999-05, Vol.201, p.534-537

1999

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Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Thin solid films, 2001-01, Vol.381 (1), p.164-169

2001

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Properties of optically active Si:Er and Si 1− xGe x layers grown by the sublimation MBE method : [Thin Solid Films 369 (2000) 320–323] 1,2

Thin solid films, 2001, Vol.381 (1), p.164-169

2001

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Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Thin solid films, 2000-07, Vol.369 (1-2), p.426-430

2000

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Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

Physica. B, Condensed matter, 2001-12, Vol.308, p.361-364

2001

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High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

Journal of End-to-End-testing, 2009-12, Vol.404 (23-24), p.4593-4596

2009

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Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Specific features of the nonradiative relaxation of [Er.sup.3+] ions in epitaxial Si structures

Hodographs in diode-structure diagnostics

Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon p-n junction

High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE-grown Si:Er/Si diode structures

Electroluminescence at a wavelength of 1.54 µm in Si:Er/Si structures consisting of a number of p-n junctions

Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes [p.sup.+]/[n.sup.+]/n-Si:Er

Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Electroluminescence at a wavelength of 1.5 µm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Optical Er-doping of Si during sublimational molecular beam epitaxy

Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Properties of optically active Si:Er and Si 1− xGe x layers grown by the sublimation MBE method : [Thin Solid Films 369 (2000) 320–323] 1,2

Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

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