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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Nanotechnology, 2024-04, Vol.35 (16), p.165203

2024

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Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Surface investigation, x-ray, synchrotron and neutron techniques, 2024-06, Vol.18 (3), p.586-593

2024

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Advanced 9 K × 9 K GPIXEL-Based NEVA9090 Camera for Wide-Field Survey Telescopes

Astrophysical bulletin, 2022, Vol.77 (4), p.509-515

2022

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A Facility for the Study of Atmospheric Parameters Based on the Shack–Hartmann Sensor

Astrophysical bulletin, 2022-06, Vol.77 (2), p.214-221

2022

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Urbach absorption edge in epitaxial erbium-doped silicon

Journal of applied physics, 2015-02, Vol.117 (5)

2015

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Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1552-1556

2017

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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1485-1489

2017

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Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1475-1478

2016

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Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Semiconductor science and technology, 2012-10, Vol.27 (10), p.105028

2012

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Extremely sharp electroluminescence from Er-doped silicon

Semiconductor science and technology, 2009-06, Vol.24 (6), p.065009-065009 (3)

2009

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High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4593-4596

2009

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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Thin solid films, 2008-11, Vol.517 (1), p.398-400

2008

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Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1556-1560

2006

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Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-01, Vol.146 (1), p.256-259

2008

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A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes

Semiconductor science and technology, 2006-10, Vol.21 (10), p.1459-1463

2006

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Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-12, Vol.105 (1), p.70-73

2003

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“Jaspers’ Scandal” and “Fischer’s Controversy” as the Central Elements of the “Historical Policy” in Western Germany of the 1960th

Vestnik Rossijskogo universiteta družby narodov. Seriâ Politologiâ (Online), 2013-12 (2), p.138-147

D V Shmagin

2013

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Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy

Nanotechnology, 2002-02, Vol.13 (1), p.97-102

2002

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The Indo-Russian UV Spectrograph Project for the Chinese Space Station (SING)

Solar system research, 2021-12, Vol.55 (7), p.688-691

2021

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Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.769-772

2003

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WSO–UV Project: New Touches

Solar system research, 2021-12, Vol.55 (7), p.677-687

2021

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The Vichy Syndrome: the Political Problems of the Collaborationist Past Rethinking

Vestnik Rossijskogo universiteta družby narodov. Seriâ Politologiâ (Online), 2012-06 (2), p.70-79

D V Shmagin

2012

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Hodographs in diode-structure diagnostics

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1443-1447

2015

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Silicon epilayers grown by chemical vapor deposition from high-purity silane

Inorganic materials, 2006-08, Vol.42 (8), p.815-818

2006

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Absorption cross section for the 4 I 15/2 → 4 I 13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

JETP letters, 2015-02, Vol.100 (12), p.807-811

2015

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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Advanced 9 K × 9 K GPIXEL-Based NEVA9090 Camera for Wide-Field Survey Telescopes

A Facility for the Study of Atmospheric Parameters Based on the Shack–Hartmann Sensor

Urbach absorption edge in epitaxial erbium-doped silicon

Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Extremely sharp electroluminescence from Er-doped silicon

High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

“Jaspers’ Scandal” and “Fischer’s Controversy” as the Central Elements of the “Historical Policy” in Western Germany of the 1960th

Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy

The Indo-Russian UV Spectrograph Project for the Chinese Space Station (SING)

Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

WSO–UV Project: New Touches

The Vichy Syndrome: the Political Problems of the Collaborationist Past Rethinking

Hodographs in diode-structure diagnostics

Silicon epilayers grown by chemical vapor deposition from high-purity silane

Absorption cross section for the 4 I 15/2 → 4 I 13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

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