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Irradiation-induced broadening of the Raman spectra in monolayer graphene

Journal of applied physics, 2019-11, Vol.126 (19)

2019

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Raman scattering and electrical resistance of highly disordered graphene

Physical review. B, Condensed matter and materials physics, 2015-01, Vol.91 (4), Article 045414

2015

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Effect of annealing on Raman spectra of monolayer graphene samples gradually disordered by ion irradiation

Journal of applied physics, 2017-03, Vol.121 (11)

2017

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Isotopically engineered Si and Ge for spintronics and quantum computation

Journal of magnetism and magnetic materials, 2009-04, Vol.321 (7), p.884-887

Shlimak, I.

2009

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Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions

Journal of applied physics, 2016-07, Vol.120 (4)

2016

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Hopping magnetoresistance in ion irradiated monolayer graphene

Physica. E, Low-dimensional systems & nanostructures, 2016-02, Vol.76, p.158-163

2016

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Charge carrier transport asymmetry in monolayer graphene

Physical review. B, 2017-12, Vol.96 (24), Article 245143

2017

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Irradiation-induced metal-insulator transition in monolayer graphene

FlatChem, 2019-03, Vol.14, p.100084, Article 100084

2019

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Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

Physical review. B, Condensed matter and materials physics, 2013-10, Vol.88 (15), Article 155313

2013

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Long-lived spin echoes in a magnetically dilute system: An NMR study of Ge single crystals

Physical review. B, Condensed matter and materials physics, 2007-10, Vol.76 (15), Article 155201

2007

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Evidence of structural changes in ion-irradiated graphene independent of the incident ions mass

Applied surface science, 2022-09, Vol.597, p.153701, Article 153701

2022

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Analysis of fluctuations in the Raman spectra of suspended and supported graphene films

Applied surface science, 2021-01, Vol.536, p.147812, Article 147812

2021

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Electron transport in a slot-gate Si MOSFET

Europhysics letters, 2008-05, Vol.82 (4), p.47001-p1-47001-p3

2008

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Isotopically engineered silicon/silicon-germanium nanostructures as basic elements for a nuclear spin quantum computer

Journal of physics. Condensed matter, 2001-07, Vol.13 (26), p.6059-6065

2001

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Crossover phenomenon for two-dimensional hopping conductivity and density-of-states near the Fermi level

Solid state communications, 1999-03, Vol.109 (12), p.751-756

1999

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Transverse “resistance overshoot” in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime

Europhysics letters, 2005-03, Vol.69 (6), p.997-1002

2005

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Determination of the Critical Conductivity Exponent for the Metal-Insulator Transition at Nonzero Temperatures: Universality of the Transition

Physical review letters, 1996-08, Vol.77 (6), p.1103-1106

1996

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Fluctuation-stimulated variable-range hopping

Solid state communications, 2000-01, Vol.113 (10), p.587-591

2000

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Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density

Physica status solidi. C, 2008-03, Vol.5 (3), p.839-841

2008

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Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime

Physica status solidi. C, 2006-02, Vol.3 (2), p.309-312

2006

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Switching phenomena in elastic polymer films

Solid state communications, 1998-01, Vol.107 (9), p.443-446

1998

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Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

Physical review. B, Condensed matter, 2003, Vol.68 (7), Article 075321

2003

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Crossover phenomenon for hopping conduction in strong magnetic fields

Physical review letters, 1992-05, Vol.68 (20), p.3076-3079

1992

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Neutron transmutation doping in semiconductors: Science and applications

Physics of the solid state, 1999-05, Vol.41 (5), p.716-719

Shlimak, I. S.

1999

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Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO 2 films using Ge-ion implantation and neutron irradiation methods

Applied physics letters, 2011-02, Vol.98 (7), p.073103-073103-3

2011

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Irradiation-induced broadening of the Raman spectra in monolayer graphene

Raman scattering and electrical resistance of highly disordered graphene

Effect of annealing on Raman spectra of monolayer graphene samples gradually disordered by ion irradiation

Isotopically engineered Si and Ge for spintronics and quantum computation

Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions

Hopping magnetoresistance in ion irradiated monolayer graphene

Charge carrier transport asymmetry in monolayer graphene

Irradiation-induced metal-insulator transition in monolayer graphene

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

Long-lived spin echoes in a magnetically dilute system: An NMR study of Ge single crystals

Evidence of structural changes in ion-irradiated graphene independent of the incident ions mass

Analysis of fluctuations in the Raman spectra of suspended and supported graphene films

Electron transport in a slot-gate Si MOSFET

Isotopically engineered silicon/silicon-germanium nanostructures as basic elements for a nuclear spin quantum computer

Crossover phenomenon for two-dimensional hopping conductivity and density-of-states near the Fermi level

Transverse “resistance overshoot” in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime

Determination of the Critical Conductivity Exponent for the Metal-Insulator Transition at Nonzero Temperatures: Universality of the Transition

Fluctuation-stimulated variable-range hopping

Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density

Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime

Switching phenomena in elastic polymer films

Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

Crossover phenomenon for hopping conduction in strong magnetic fields

Neutron transmutation doping in semiconductors: Science and applications

Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO 2 films using Ge-ion implantation and neutron irradiation methods

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