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Photoelectrochemical etching of n-type 4H silicon carbide

Journal of applied physics, 2004-08, Vol.96 (4), p.2311-2322

2004

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High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

Journal of crystal growth, 2005-12, Vol.285 (4), p.486-490

2005

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Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC

Physical review letters, 2004-01, Vol.92

2004

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Nanoporous SiC: A Candidate Semi-Permeable Material for Biomedical Applications

Biomedical microdevices, 2004-12, Vol.6 (4), p.261-267

2004

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Fabrication and morphology of porous p -type SiC

Journal of applied physics, 2005-02, Vol.97 (4), p.044908-044908-5

2005

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Development of a high-growth rate 3C-SiC on Si CVD process

MRS proceedings, 2006, Vol.911, Article 0911-B08-01

2006

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Bulk growth of 6H-SiC on non-basal quasi-polar faces

Journal of crystal growth, 2006-06, Vol.291 (2), p.317-319

2006

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Growth of 3C-SiC on Si Molds for MEMS Applications

Materials science forum, 2006-10, Vol.527-529, p.307-310

2006

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Oxide of non-basal quasi-polar 6H-SiC surfaces

Journal of physics. D, Applied physics, 2006-07, Vol.39 (13), p.2692-2695

2006

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Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

Materials science forum, 2007-01, Vol.556-557, p.191-194

2007

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A Short Synopsis of the Current Status of Porous SiC and GaN

Materials Science Forum, 2005-05, Vol.483-485, p.251-256

2005

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Porous Silicon Carbide as a Membrane for Implantable Biosensors

Materials science forum, 2004-01, Vol.457-460, p.1463-1466

2004

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Reduction of rare earth metals’ oxides in pyrometallurgical reprocessing of spent nuclear fuel

AIP Conference Proceedings, 2020, Vol.2313 (1)

2020

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High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

Materials science forum, 2006-01, Vol.527-529, p.187-190

2006

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CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

Materials science forum, 2006-10, Vol.527-529, p.255-258

2006

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Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling

Materials science forum, 2007-09, Vol.556-557, p.61-64

2007

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Ribosomal RNA of Metchnikovellids in Gregarine Transcriptomes and rDNA of Microsporidia Sensu Lato in Metagenomes

Biology bulletin reviews, 2022, Vol.12 (3), p.213-239

2022

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Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates

Materials science forum, 2007-01, Vol.556-557, p.415-418

2007

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CVD of 6H-SiC on Non-Basal Quasi Polar Faces

Materials science forum, 2007-01, Vol.556-557, p.73-76

2007

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Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals

Materials Science Forum, 2005-01, Vol.483-485, p.273-276

2005

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Electrical and optical properties of erbium-related centers in 6H silicon carbide

Physica. B, Condensed matter, 2001-12, Vol.308, p.687-690

2001

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Triangular Pore Formation in Highly Doped n-Type 4H SiC

Materials science forum, 2004-01, Vol.457-460, p.1467-1470

2004

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Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

Materials science forum, 2004-01, Vol.457-460, p.1457-1462

2004

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Porous Structure of Anodized p-Type 6H SiC

Materials science forum, 2004-01, Vol.457-460, p.1471-1474

2004

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Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC

Materials Science Forum, 2005-05, Vol.483-485, p.277-280

2005

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Photoelectrochemical etching of n-type 4H silicon carbide

High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC

Nanoporous SiC: A Candidate Semi-Permeable Material for Biomedical Applications

Fabrication and morphology of porous p -type SiC

Development of a high-growth rate 3C-SiC on Si CVD process

Bulk growth of 6H-SiC on non-basal quasi-polar faces

Growth of 3C-SiC on Si Molds for MEMS Applications

Oxide of non-basal quasi-polar 6H-SiC surfaces

Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

A Short Synopsis of the Current Status of Porous SiC and GaN

Porous Silicon Carbide as a Membrane for Implantable Biosensors

Reduction of rare earth metals’ oxides in pyrometallurgical reprocessing of spent nuclear fuel

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling

Ribosomal RNA of Metchnikovellids in Gregarine Transcriptomes and rDNA of Microsporidia Sensu Lato in Metagenomes

Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates

CVD of 6H-SiC on Non-Basal Quasi Polar Faces

Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals

Electrical and optical properties of erbium-related centers in 6H silicon carbide

Triangular Pore Formation in Highly Doped n-Type 4H SiC

Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

Porous Structure of Anodized p-Type 6H SiC

Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC

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