UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 1.683

Sortiert nach

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Thin solid films, 2016-08, Vol.613, p.24-28

2016

Link zum Volltext

Verfügbarkeit prüfen

Effects of bone mineral density of the lumbar spine and prevalent vertebral fractures on the risk of immobility

Osteoporosis international, 2010-09, Vol.21 (9), p.1545-1551

2010

Link zum Volltext

Verfügbarkeit prüfen

Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

Applied physics letters, 2012-05, Vol.100 (22), p.222102-222102-4

2012

Link zum Volltext

Verfügbarkeit prüfen

Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

Applied physics letters, 2006-11, Vol.89 (20), p.201102-201102-3

2006

Link zum Volltext

Verfügbarkeit prüfen

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Thin solid films, 2014-04, Vol.557, p.76-79

2014

Link zum Volltext

Verfügbarkeit prüfen

Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Thin solid films, 2013-05, Vol.534, p.470-473

2013

Link zum Volltext

Verfügbarkeit prüfen

Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates

Journal of crystal growth, 2014-09, Vol.401, p.758-761

2014

Link zum Volltext

Verfügbarkeit prüfen

Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

Applied physics letters, 2007-07, Vol.91 (1), p.011104-011104-3

2007

Link zum Volltext

Verfügbarkeit prüfen

Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

IEEE journal of selected topics in quantum electronics, 2012-11, Vol.18 (6), p.1830-1838

2012

Link zum Volltext
IEEE_Xplore

Ultrashallow Ohmic contacts for n-type Ge by Sb δ -doping

Applied physics letters, 2010-10, Vol.97 (16), p.162108-162108-3

2010

Link zum Volltext

Verfügbarkeit prüfen

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Physical review. B, Condensed matter and materials physics, 2009-11, Vol.80 (20), Article 205206

2009

Link zum Volltext

Verfügbarkeit prüfen

Observation of whispering-gallery modes in Si microdisks at room temperature

Applied physics letters, 2007-04, Vol.90 (14), p.141102-141102-3

2007

Link zum Volltext

Verfügbarkeit prüfen

On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Journal of crystal growth, 2013-09, Vol.378, p.251-253

2013

Link zum Volltext

Verfügbarkeit prüfen

Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

Applied physics letters, 2007-08, Vol.91 (8), p.082108-082108-3

2007

Link zum Volltext

Verfügbarkeit prüfen

Silicon-Germanium (SiGe) Nanostructures - Production, Properties and Applications in Electronics

1, 2011

Link zum Volltext

Verfügbarkeit prüfen

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

Applied physics letters, 2009-09, Vol.95 (12)

2009

Link zum Volltext

Verfügbarkeit prüfen

Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

Journal of applied physics, 2010-05, Vol.107 (10), p.103509-103509-5

2010

Link zum Volltext

Verfügbarkeit prüfen

In-plane strain fluctuation in strained-Si/SiGe heterostructures

Applied physics letters, 2003-11, Vol.83 (21), p.4339-4341

2003

Link zum Volltext

Verfügbarkeit prüfen

Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Applied physics letters, 2002-07, Vol.81 (5), p.847-849

2002

Link zum Volltext

Verfügbarkeit prüfen

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Applied physics letters, 1995-05, Vol.66 (22), p.3024-3026

1995

Link zum Volltext

Verfügbarkeit prüfen

Compressive strain dependence of hole mobility in strained Ge channels

Applied physics letters, 2005-11, Vol.87 (19), p.192102-192102-3

2005

Link zum Volltext

Verfügbarkeit prüfen

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Applied physics letters, 1992-08, Vol.61 (5), p.557-559

1992

Link zum Volltext

Verfügbarkeit prüfen

Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

Applied physics letters, 1998-03, Vol.72 (13), p.1617-1619

1998

Link zum Volltext

Verfügbarkeit prüfen

AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Journal of electron spectroscopy and related phenomena, 2013-10, Vol.190, p.295-301

2013

Link zum Volltext

Verfügbarkeit prüfen

Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Applied physics letters, 1997-07, Vol.71 (2), p.258-260

1997

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 1.683

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(1.258)
Mit Volltextzugriff
(1.377)

Publikationsform

Sprache

Englisch
(1.581)
Japanisch
(491)
Deutsch
(3)
Französisch
(2)
Russisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(1.058)
Physics
(504)
Physical Sciences
(502)
Life Sciences & Biomedicine
(476)
Humans
(398)
Physics, Applied
(325)
Technology
(311)
Biological And Medical Sciences
(293)
Female
(274)
Exact Sciences And Technology
(261)
Male
(241)
Materials Science
(221)
Animals
(220)
Medical Sciences
(204)
Materials Science, Multidisciplinary
(176)
Physics, Condensed Matter
(175)
Middle Aged
(151)
Adult
(133)
Aged
(129)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(129)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Effects of bone mineral density of the lumbar spine and prevalent vertebral fractures on the risk of immobility

Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates

Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

Ultrashallow Ohmic contacts for n-type Ge by Sb δ -doping

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Observation of whispering-gallery modes in Si microdisks at room temperature

On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

Silicon-Germanium (SiGe) Nanostructures - Production, Properties and Applications in Electronics

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

In-plane strain fluctuation in strained-Si/SiGe heterostructures

Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Compressive strain dependence of hole mobility in strained Ge channels

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Suchergebnisse filtern