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(Invited) Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy

ECS transactions, 2021-10, Vol.104 (4), p.69-82

Shiojima, Kenji

2021

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Mapping of Au/a‐IGZO Schottky contacts by using scanning internal photoemission microscopy

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

2017

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Mapping of n-GaN Schottky contacts formed on facet-growth substrates using near-ultraviolet scanning internal photoemission microscopy

Semiconductor science and technology, 2021-03, Vol.36 (3)

2021

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Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy

Materials science in semiconductor processing, 2020-11, Vol.118, p.105182, Article 105182

2020

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Local bandgap narrowing in the forming state of threshold switching materials

Applied physics letters, 2024-07, Vol.125 (2)

2024

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Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy

Materials science in semiconductor processing, 2017-11, Vol.70, p.92-98

2017

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Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2022-08, Vol.61 (8), p.86506

2022

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Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1012

2023

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Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio

Japanese Journal of Applied Physics, 2016-06, Vol.55 (6), p.61101

2016

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Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

Japanese Journal of Applied Physics, 2021-05, Vol.60 (5), p.56503

2021

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Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD02

2019

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Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD13

2019

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Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1017-1023

2015

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Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.41002-1-041002-7

2015

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Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1059

2022

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Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy

Materials science in semiconductor processing, 2017-11, Vol.70, p.86-91

2017

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(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days

ECS transactions, 2023-09, Vol.112 (1), p.89-107

Shiojima, Kenji

2023

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Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD12

2021

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Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy

Applied physics express, 2015-04, Vol.8 (4), p.46502

2015

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Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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IoT社会の発展を支える半導体技術の新展開: ３．界面顕微光応答法によるワイドバンドギャップ材料・電極界面の2次元評価

材料, 2020/11/15, Vol.69(11), pp.837-842

塩島, 謙次

2020

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Two-dimensional characterization of 3C-SiC layers using scanning internal photoemission microscopy: Mapping of electrical characteristics and crystal quality in domain boundary regions

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CR06

2017

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Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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(Invited) Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy

Mapping of Au/a‐IGZO Schottky contacts by using scanning internal photoemission microscopy

Mapping of n-GaN Schottky contacts formed on facet-growth substrates using near-ultraviolet scanning internal photoemission microscopy

Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy

Local bandgap narrowing in the forming state of threshold switching materials

Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy

Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy

Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio

Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage

Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy

Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy

Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes

Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy

(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy

Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy

IoT社会の発展を支える半導体技術の新展開: ３．界面顕微光応答法によるワイドバンドギャップ材料・電極界面の2次元評価

Two-dimensional characterization of 3C-SiC layers using scanning internal photoemission microscopy: Mapping of electrical characteristics and crystal quality in domain boundary regions

Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

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