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Signal Transmission in Real-Time Internal Radiation Dose Measurement System Using Magnetic Fields

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.4456-4459

2008

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High-luminance 1-m-long plasma tubes for wall displays

Journal of the Society for Information Display, 2004-09, Vol.12 (3), p.263-268, Article 263

2004

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A light and flexible plasma tube array with a film substrate

Journal of the Society for Information Display, 2005-08, Vol.13 (8), p.647-655

2005

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Differential involvement of phosphatidylinositol 3‐kinase‐related protein kinases in hyperphosphorylation of replication protein A2 in response to replication‐mediated DNA double‐strand breaks

Genes to cells : devoted to molecular & cellular mechanisms, 2006-03, Vol.11 (3), p.237-246

2006

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Epidemiology of suicidal ideation and help‐seeking behaviors among the elderly in Japan

Psychiatry and clinical neurosciences, 2001-12, Vol.55 (6), p.605-610

2001

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High-luminous-efficacy structure for plasma tubes

Journal of the Society for Information Display, 2005-11, Vol.13 (11), p.905-912

2005

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Basic Evaluation of Signal Transmission in a Real-Time Internal Radiation Dose Measurement System

Journal of the Magnetics Society of Japan, 2009/05/01, Vol.33(3), pp.337-340

2009

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18.3: Dynamic Driving Characteristics of Plasma Tubes Array

SID International Symposium Digest of technical papers, 2004-05, Vol.35 (1), p.810-813

2004

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Two-dimensional strongly coupled plasma on a liquid surface

AIP Conference Proceedings, 2002, p.434-437

2002

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リアルタイム体内線量測定システムにおける信号伝送に関する基礎検討

Journal of the Magnetics Society of Japan, 2009/05/01, Vol.33(3), pp.337-340

2009

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Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

APL materials, 2019-02, Vol.7 (2), p.022503-022503-6

2019

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THU0434 Three-dimensional power doppler sonographic evaluation of finger joints in patients with rheumatoid arthritis

Annals of the rheumatic diseases, 2013-06, Vol.71 (Suppl 3), p.302-302

2013

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Impact ionization coefficients of 4H silicon carbide

Applied physics letters, 2004-08, Vol.85 (8), p.1380-1382

2004

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Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Materials science forum, 2015-06, Vol.821-823, p.842-846

2015

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Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Applied physics letters, 2015-03, Vol.106 (10)

2015

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Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

Materials science forum, 2010-04, Vol.645-648, p.799-804

2010

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Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

Journal of applied physics, 2004-09, Vol.96 (5), p.2708-2715

2004

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Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Materials science forum, 2015-06, Vol.821-823, p.721-724

2015

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VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

Materials science forum, 2014-02, Vol.778-780, p.851-854

2014

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Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

Journal of applied physics, 2004-11, Vol.96 (10), p.5601-5606

2004

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Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Materials science forum, 2014-02, Vol.778-780, p.615-618

2014

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Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1954-1960

2008

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Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

Materials science forum, 2010-04, Vol.645-648, p.655-660

2010

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Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

Materials science forum, 2012-05, Vol.717-720, p.789-792

2012

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Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

Materials science forum, 2009-01, Vol.600-603, p.783-786

2009

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Signal Transmission in Real-Time Internal Radiation Dose Measurement System Using Magnetic Fields

High-luminance 1-m-long plasma tubes for wall displays

A light and flexible plasma tube array with a film substrate

Differential involvement of phosphatidylinositol 3‐kinase‐related protein kinases in hyperphosphorylation of replication protein A2 in response to replication‐mediated DNA double‐strand breaks

Epidemiology of suicidal ideation and help‐seeking behaviors among the elderly in Japan

High-luminous-efficacy structure for plasma tubes

Basic Evaluation of Signal Transmission in a Real-Time Internal Radiation Dose Measurement System

18.3: Dynamic Driving Characteristics of Plasma Tubes Array

Two-dimensional strongly coupled plasma on a liquid surface

リアルタイム体内線量測定システムにおける信号伝送に関する基礎検討

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

THU0434 Three-dimensional power doppler sonographic evaluation of finger joints in patients with rheumatoid arthritis

Impact ionization coefficients of 4H silicon carbide

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC

Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

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