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Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current

Applied physics letters, 2023-10, Vol.123 (16)

2023

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van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C

Applied physics letters, 2022-04, Vol.120 (16)

2022

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Neuro-Inspired-in-Memory Computing Using Charge-Trapping MemTransistor on Germanium as Synaptic Device

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.1-5

2020

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Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3459-3465

2016

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Acute Effects of Wearing Different Surgical Face Masks during High-Intensity, Short-Rest Resistance Exercise on Cardiorespiratory and Pulmonary Function and Perceptual Responses in Weightlifters

Biology (Basel, Switzerland), 2022-06, Vol.11 (7), p.992

2022

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The Effect of Repetitive Drop Jumps among Different Heights on Bilateral Asymmetry of Countermovement Jumps

Symmetry (Basel), 2022-01, Vol.14 (2), p.190

2022

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A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

Applied physics letters, 2010-02, Vol.96 (5)

2010

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Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.274-281

2023

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Inhibition of the MEK/ERK pathway reduces microglial activation and interleukin-1-beta expression in spinal cord ischemia/reperfusion injury in rats

The Journal of thoracic and cardiovascular surgery, 2007-04, Vol.133 (4), p.934-941

2007

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BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance

IEEE transactions on nanotechnology, 2024, Vol.23, p.474-477

2024

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In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.235-240

2013

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Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

IEEE electron device letters, 2022-10, Vol.43 (10), p.1605-1608

2022

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Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1776-1780

2022

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Effect of different resistance increments during warm-up on the snatch performance of male weightlifters

Heliyon, 2024-07, Vol.10 (14), p.e34827, Article e34827

2024

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High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory

IEEE electron device letters, 2020-11, Vol.41 (11), p.1649-1652

2020

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A two-dimensional RAKE receiver architecture with an FFT-based matched filtering

IEEE transactions on vehicular technology, 2005-01, Vol.54 (1), p.224-234

2005

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Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-09, Vol.36 (5)

2018

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Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Applied physics letters, 2010-05, Vol.96 (22)

2010

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Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1555-1560

2013

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Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Hormonal responses in heavy training and recovery periods in an elite male weightlifter

Journal of sports science & medicine, 2008-12, Vol.7 (4), p.560-561

2008

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Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide―metal structure

Thin solid films, 2010-12, Vol.519 (5), p.1536-1539

2010

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hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.235-240

2013

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Electrical Characteristics of / MOSCAPs and the Effect of Postdeposition Annealing Temperatures

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1555-1560

2013

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InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2015, p.415-418

2015

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Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current

van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C

Neuro-Inspired-in-Memory Computing Using Charge-Trapping MemTransistor on Germanium as Synaptic Device

Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

Acute Effects of Wearing Different Surgical Face Masks during High-Intensity, Short-Rest Resistance Exercise on Cardiorespiratory and Pulmonary Function and Perceptual Responses in Weightlifters

The Effect of Repetitive Drop Jumps among Different Heights on Bilateral Asymmetry of Countermovement Jumps

A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

Inhibition of the MEK/ERK pathway reduces microglial activation and interleukin-1-beta expression in spinal cord ischemia/reperfusion injury in rats

BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance

In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

Effect of different resistance increments during warm-up on the snatch performance of male weightlifters

High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory

A two-dimensional RAKE receiver architecture with an FFT-based matched filtering

Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures

Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Hormonal responses in heavy training and recovery periods in an elite male weightlifter

Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide―metal structure

hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

Electrical Characteristics of / MOSCAPs and the Effect of Postdeposition Annealing Temperatures

InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

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