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Promises and prospects of two-dimensional transistors

Nature (London), 2021-03, Vol.591 (7848), p.43-53

2021

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Triboelectric Series of 2D Layered Materials

Advanced materials (Weinheim), 2018-09, Vol.30 (39), p.e1801210-n/a

2018

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An Atomically Thin Optoelectronic Machine Vision Processor

Advanced materials (Weinheim), 2020-09, Vol.32 (36), p.e2002431-n/a

2020

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High‐Performance Triboelectric Nanogenerators Based on Electrospun Polyvinylidene Fluoride–Silver Nanowire Composite Nanofibers

Advanced functional materials, 2018-01, Vol.28 (2), p.n/a

2018

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High‐Throughput Growth of Wafer‐Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening

Advanced materials (Weinheim), 2020-10, Vol.32 (42), p.e2003542-n/a

2020

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Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

ACS nano, 2017-02, Vol.11 (2), p.1588-1596

2017

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Transparent Flexible Graphene Triboelectric Nanogenerators

Advanced materials (Weinheim), 2014-06, Vol.26 (23), p.3918-3925

2014

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Ultralow-dielectric-constant amorphous boron nitride

Nature (London), 2020-06, Vol.582 (7813), p.511-514

2020

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Efficient Reduction of Graphite Oxide by Sodium Borohydride and Its Effect on Electrical Conductance

Advanced functional materials, 2009-06, Vol.19 (12), p.1987-1992

2009

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Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

Nano letters, 2012-02, Vol.12 (2), p.714-718

2012

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Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth

Advanced materials (Weinheim), 2022-12, Vol.34 (48), p.e2103286-n/a

2022

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Spiral‐Driven Vertical Conductivity in Nanocrystalline Graphene

Small (Weinheim an der Bergstrasse, Germany), 2024-02, Vol.20 (7), p.e2308176-n/a

2024

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Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth

Nano letters, 2011-10, Vol.11 (10), p.4144-4148

2011

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Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation

Advanced materials (Weinheim), 2009-06, Vol.21 (22), p.2328-2333

2009

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Control of Triboelectrification by Engineering Surface Dipole and Surface Electronic State

ACS applied materials & interfaces, 2016-07, Vol.8 (28), p.18519-18525

2016

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Synthesis of Multilayer Graphene Balls by Carbon Segregation from Nickel Nanoparticles

ACS nano, 2012-08, Vol.6 (8), p.6803-6811

2012

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Interface‐Driven Partial Dislocation Formation in 2D Heterostructures

Advanced materials (Weinheim), 2019-04, Vol.31 (15), p.e1807486-n/a

2019

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Fully Rollable Transparent Nanogenerators Based on Graphene Electrodes

Advanced materials (Weinheim), 2010-05, Vol.22 (19), p.2187-2192

2010

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Non-specular scattering of carriers from surface defects in thin metal interconnects

Journal of applied physics, 2020-11, Vol.128 (18)

2020

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Suppressing π–π stacking interactions for enhanced solid-state emission of flat aromatic molecules via edge functionalization with picket-fence-type groups

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-12, Vol.8 (48), p.17289-17296

2020

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Vertical MoS 2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

Nano letters, 2019-04, Vol.19 (4), p.2411-2417

2019

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Surface roughness mediated specularity parameter of thin Cu films

Applied physics letters, 2021-03, Vol.118 (13)

2021

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Transfer-Free Growth of Few-Layer Graphene by Self-Assembled Monolayers

Advanced materials (Weinheim), 2011-10, Vol.23 (38), p.4392-4397

2011

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Functionalization and Dispersion of Hexagonal Boron Nitride (h-BN) Nanosheets Treated with Inorganic Reagents

Chemistry, an Asian journal, 2012-03, Vol.7 (3), p.554-560

2012

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Introduction of an Al Seed Layer for Facile Adsorption of MoCl5 during Atomic Layer Deposition of MoS2

Physica status solidi. A, Applications and materials science, 2020-08, Vol.217 (15), p.n/a

2020

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Promises and prospects of two-dimensional transistors

Triboelectric Series of 2D Layered Materials

An Atomically Thin Optoelectronic Machine Vision Processor

High‐Performance Triboelectric Nanogenerators Based on Electrospun Polyvinylidene Fluoride–Silver Nanowire Composite Nanofibers

High‐Throughput Growth of Wafer‐Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Transparent Flexible Graphene Triboelectric Nanogenerators

Ultralow-dielectric-constant amorphous boron nitride

Efficient Reduction of Graphite Oxide by Sodium Borohydride and Its Effect on Electrical Conductance

Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth

Spiral‐Driven Vertical Conductivity in Nanocrystalline Graphene

Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth

Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation

Control of Triboelectrification by Engineering Surface Dipole and Surface Electronic State

Synthesis of Multilayer Graphene Balls by Carbon Segregation from Nickel Nanoparticles

Interface‐Driven Partial Dislocation Formation in 2D Heterostructures

Fully Rollable Transparent Nanogenerators Based on Graphene Electrodes

Non-specular scattering of carriers from surface defects in thin metal interconnects

Suppressing π–π stacking interactions for enhanced solid-state emission of flat aromatic molecules via edge functionalization with picket-fence-type groups

Vertical MoS 2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV

Surface roughness mediated specularity parameter of thin Cu films

Transfer-Free Growth of Few-Layer Graphene by Self-Assembled Monolayers

Functionalization and Dispersion of Hexagonal Boron Nitride (h-BN) Nanosheets Treated with Inorganic Reagents

Introduction of an Al Seed Layer for Facile Adsorption of MoCl5 during Atomic Layer Deposition of MoS2

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