UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography

Applied physics letters, 2014-09, Vol.105 (13)

2014

Volltextzugriff (PDF)

Selective Area Metal-Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1053-1065

2009

Volltextzugriff (PDF)

Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (11), p.2500-2510

2015

Volltextzugriff (PDF)

Thermal stability and chemical bonding states of AlO x N y /Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

Applied surface science, 2010-12, Vol.257 (5), p.1638-1642

2010

Volltextzugriff (PDF)

Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

Applied surface science, 2010-12, Vol.257 (5), p.1638-1642

2010

Volltextzugriff (PDF)

Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

Journal of crystal growth, 2009-05, Vol.311 (10), p.2813-2816

2009

Volltextzugriff (PDF)

Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE

Journal of crystal growth, 2006-11, Vol.296 (2), p.179-185

2006

Volltextzugriff (PDF)

Ethanol-Assisted Flow-Type Supercritical Fluid Deposition of SrRuO3 for Stoichiometric Film Formation

ECS solid state letters, 2013-06, Vol.2 (9), p.P70-P72

2013

Volltextzugriff (PDF)

Effect of NH3 on the fabrication of HfN as gate-electrode using MOCVD

Thin solid films, 2006-03, Vol.498 (1-2), p.75-79

2006

Volltextzugriff (PDF)

CVD of cobalt–tungsten alloy film as a novel copper diffusion barrier

Microelectronic engineering, 2013-06, Vol.106, p.91-95

2013

Volltextzugriff (PDF)

X-ray photoelectron spectroscopic characterization of the adhesion behavior of chemical vapor deposited copper films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2642-2651

2001

Volltextzugriff (PDF)

Control of abnormal edge growth in selective area MOVPE of InP

Journal of crystal growth, 2006-01, Vol.287 (2), p.668-672

2006

Volltextzugriff (PDF)

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

Journal of crystal growth, 2007, Vol.298, p.85-89

2007

Volltextzugriff (PDF)

High Thermal Conductivity AlN Films for Advanced 3D Chiplets

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, p.1-2

2024

Volltextzugriff (PDF)

The Role of Gas‐Phase Reactions during Chemical Vapor Deposition of Copper from (hfac)Cu(tmvs)

Journal of the Electrochemical Society, 1998-12, Vol.145 (12), p.4226-4233

1998

Volltextzugriff (PDF)

Cu Wettability and Diffusion Barrier Property of Ru Thin Film for Cu Metallization

Journal of the Electrochemical Society, 2005, Vol.152 (8), p.G594

2005

Volltextzugriff (PDF)

X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes

Applied surface science, 2000-06, Vol.159, p.250-255

2000

Volltextzugriff (PDF)

Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE

Journal of crystal growth, 2000-12, Vol.221 (1), p.136-141

2000

Volltextzugriff (PDF)

Kinetic study of P and As desorption from binary and ternary III–V semiconductors surface by in situ ellipsometry

Journal of crystal growth, 2000-12, Vol.221 (1), p.129-135

2000

Volltextzugriff (PDF)

Surface Reaction Probabilities of Silicon Hydride Radicals in SiH4/H2 Thermal Chemical Vapor Deposition

Industrial & engineering chemistry research, 2002-05, Vol.41 (9), p.2129-2135

2002

Volltextzugriff (PDF)

Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy

Applied surface science, 1997-06, Vol.117, p.746-752

1997

Volltextzugriff (PDF)

Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas

Physica status solidi. B. Basic research, 2002-12, Vol.234 (3), p.961-964

2002

Volltextzugriff (PDF)

Chemical Vapor Deposition Reactor Design Using Small‐Scale Diagnostic Experiments Combined with Computational Fluid Dynamics Simulations

Journal of the Electrochemical Society, 1999-05, Vol.146 (5), p.1780-1788

1999

Volltextzugriff (PDF)

MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

Applied surface science, 2000-06, Vol.159, p.318-327

2000

Volltextzugriff (PDF)

Surface kinetics in MOVPE of InP and InGaP analyzed by flow modulation method

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.479-482

2005

Volltextzugriff (PDF)

1 – 25 von 180

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(128)
Mit Volltextzugriff
(140)

Publikationsform

Sprache

Englisch
(176)
Japanisch
(80)

Erscheinungsjahr

n.n

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography

Selective Area Metal-Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect

Thermal stability and chemical bonding states of AlO x N y /Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE

Ethanol-Assisted Flow-Type Supercritical Fluid Deposition of SrRuO3 for Stoichiometric Film Formation

Effect of NH3 on the fabrication of HfN as gate-electrode using MOCVD

CVD of cobalt–tungsten alloy film as a novel copper diffusion barrier

X-ray photoelectron spectroscopic characterization of the adhesion behavior of chemical vapor deposited copper films

Control of abnormal edge growth in selective area MOVPE of InP

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

High Thermal Conductivity AlN Films for Advanced 3D Chiplets

The Role of Gas‐Phase Reactions during Chemical Vapor Deposition of Copper from (hfac)Cu(tmvs)

Cu Wettability and Diffusion Barrier Property of Ru Thin Film for Cu Metallization

X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes

Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE

Kinetic study of P and As desorption from binary and ternary III–V semiconductors surface by in situ ellipsometry

Surface Reaction Probabilities of Silicon Hydride Radicals in SiH4/H2 Thermal Chemical Vapor Deposition

Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy

Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas

Chemical Vapor Deposition Reactor Design Using Small‐Scale Diagnostic Experiments Combined with Computational Fluid Dynamics Simulations

MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

Surface kinetics in MOVPE of InP and InGaP analyzed by flow modulation method

Suchergebnisse filtern