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Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Journal of applied physics, 2024-04, Vol.135 (14)

2024

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Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes

Semiconductor science and technology, 2023-04, Vol.38 (4), p.45011

2023

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Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

Applied physics letters, 2020-06, Vol.116 (22)

2020

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Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2019-11, Vol.216 (22), p.n/a

2019

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Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Comparative Study of Boron Precursors for Chemical Vapor‐Phase Deposition‐Grown Hexagonal Boron Nitride Thin Films

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3

physica status solidi (b), 2020-02, Vol.257 (2), p.n/a

2020

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Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

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Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Applied physics letters, 2021-10, Vol.119 (14)

2021

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Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.91001

2019

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Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface

Scientific reports, 2018-01, Vol.8 (1), p.1391-10, Article 1391

2018

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Nd } Fe } N } Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission

IEEE transactions on magnetics, 2019-10, Vol.55 (10), p.1-5

2019

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Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs

Japanese Journal of Applied Physics, 2022-02, Vol.61 (2), p.21007

2022

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Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD06

2019

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Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.70310

2018

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Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer

Japanese Journal of Applied Physics, 2019-02, Vol.58 (SA)

2019

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Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods

Materials, 2020-02, Vol.13 (4), p.899

2020

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Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S)

2018

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Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

CrystEngComm, 2018, Vol.2 (45), p.7364-737

2018

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Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth

Japanese Journal of Applied Physics, 2021-11, Vol.60 (11), p.115501

2021

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Reduction of radiated emission from resonance coil in GaN wireless power transmission circuit by using Nd–Fe–N magnetic material

AIP advances, 2020-02, Vol.10 (2), p.025121-025121-5

2020

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High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition

CrystEngComm, 2017, Vol.19 (8), p.124-129

2017

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Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs

Journal of crystal growth, 2019-02, Vol.507, p.437-441

2019

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Nondestructive visualization of threading dislocations in GaN by micro raman mapping

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB06

2019

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Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes

Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory

Comparative Study of Boron Precursors for Chemical Vapor‐Phase Deposition‐Grown Hexagonal Boron Nitride Thin Films

Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface

Nd } Fe } N } Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs

Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices

Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity

Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer

Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth

Reduction of radiated emission from resonance coil in GaN wireless power transmission circuit by using Nd–Fe–N magnetic material

High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition

Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs

Nondestructive visualization of threading dislocations in GaN by micro raman mapping

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