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Development of automatic regrinding program for PC-based tool grinding machine

Journal of mechanical science and technology, 2007-10, Vol.21 (10), p.1612-1616

2007

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Shubnikov–de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

Semiconductor science and technology, 2002-09, Vol.17 (9), p.999-1003

2002

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Photoluminescence characterization of midinfrared InNxAs1−x/In0.53Ga0.47As∕InP multiquantum wells with various N contents

Applied physics letters, 2005-08, Vol.87 (8)

2005

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Study of the SiO2/Si interface endurance property during rapid thermal nitridation and reoxidation processing

Applied physics letters, 1989-02, Vol.54 (9), p.822-824

1989

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Effects of post-nitridation anneals on radiation hardness in rapid thermal nitrided gate oxides

Applied physics letters, 1989-12, Vol.55 (23), p.2405-2407

1989

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Mitochondrial encephalomyopathies: CT and MRI findings and correlations with clinical features

European neurology, 1995, Vol.35 (4), p.199-205

1995

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Effect of rapid thermal reoxidation on the electrical properties of rapid thermally nitrided thin-gate oxides

IEEE transactions on electron devices, 1992-04, Vol.39 (4), p.883-892

1992

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Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing

Applied physics letters, 1990-03, Vol.56 (10), p.979-981

1990

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Mechanism of rapid thermal nitridation of thin oxides

Journal of applied physics, 1990-12, Vol.68 (11), p.5851-5855

1990

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Nitrogen-induced enhancement of the electron effective mass in InNxAs1−x

Applied physics letters, 2002-02, Vol.80 (5), p.796-798

2002

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Rapid thermal oxidation of thin nitride/oxide stacked layer

Applied physics letters, 1989-01, Vol.54 (5), p.430-432

1989

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Metal-oxide-semiconductor characteristics of rapid thermal nitrided thin oxides

Applied physics letters, 1988-05, Vol.52 (20), p.1698-1700

1988

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Stable, self-aligned TiNxOy/TiSi2 contact formation for submicron device applications

Applied physics letters, 1987-06, Vol.50 (22), p.1598-1600

1987

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Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy

Journal of electronic materials, 2003-04, Vol.32 (4), p.244-248

2003

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Study of interface state generation in thin oxynitride gate dielectrics under hot-electron stressing

Electronics letters, 1989-01, Vol.25 (20), p.1354-1355

1989

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Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics

Electronics letters, 1989-09, Vol.25 (20), p.1403-1405

1989

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Short-channel MOSFETs with oxynitride gate dielectrics fabricated using multiple rapid thermal processing

Electronics letters, 1989-09, Vol.25 (3), p.190-191

1989

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Transconductance degradation and interface state generation in metal-oxide-semiconductor field-effect transistors with oxynitride gate dielectrics under hot-carrier stress

Applied physics letters, 1990-01, Vol.56 (3), p.250-252

1990

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Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

Applied physics letters, 1988-03, Vol.52 (11), p.877-879

1988

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Radiation effects in ultrathin nitrided oxides prepared by rapid thermal processing

Applied physics letters, 1989-08, Vol.55 (9), p.840-842

1989

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Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared laser applications

IEE proceedings. Optoelectronics, 2003-06, Vol.150 (3), p.253-258

2003

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Improved radiation hardness of mos devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processing

Electronics letters, 1989-09, Vol.25 (13), p.812-813

1989

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Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.267-268

2005

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Probing the electronic structures of III–V-nitride semiconductors by x-ray photoelectron spectroscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.1491-1494

2004

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Mitochondrial DNA mutation in a Chinese family with myoclonic epilepsy and ragged-red fiber disease

Biochemical and biophysical research communications, 1991-02, Vol.174 (3), p.1109-1116

1991

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Development of automatic regrinding program for PC-based tool grinding machine

Shubnikov–de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

Photoluminescence characterization of midinfrared InNxAs1−x/In0.53Ga0.47As∕InP multiquantum wells with various N contents

Study of the SiO2/Si interface endurance property during rapid thermal nitridation and reoxidation processing

Effects of post-nitridation anneals on radiation hardness in rapid thermal nitrided gate oxides

Mitochondrial encephalomyopathies: CT and MRI findings and correlations with clinical features

Effect of rapid thermal reoxidation on the electrical properties of rapid thermally nitrided thin-gate oxides

Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing

Mechanism of rapid thermal nitridation of thin oxides

Nitrogen-induced enhancement of the electron effective mass in InNxAs1−x

Rapid thermal oxidation of thin nitride/oxide stacked layer

Metal-oxide-semiconductor characteristics of rapid thermal nitrided thin oxides

Stable, self-aligned TiNxOy/TiSi2 contact formation for submicron device applications

Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy

Study of interface state generation in thin oxynitride gate dielectrics under hot-electron stressing

Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics

Short-channel MOSFETs with oxynitride gate dielectrics fabricated using multiple rapid thermal processing

Transconductance degradation and interface state generation in metal-oxide-semiconductor field-effect transistors with oxynitride gate dielectrics under hot-carrier stress

Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

Radiation effects in ultrathin nitrided oxides prepared by rapid thermal processing

Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared laser applications

Improved radiation hardness of mos devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processing

Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

Probing the electronic structures of III–V-nitride semiconductors by x-ray photoelectron spectroscopy

Mitochondrial DNA mutation in a Chinese family with myoclonic epilepsy and ragged-red fiber disease

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