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Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

Materials, 2017-06, Vol.10 (7), p.700

2017

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Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors

Nanomaterials (Basel, Switzerland), 2019-10, Vol.9 (11), p.1518

2019

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Efficiency enhancement of single-junction GaAs solar cells coated with europium-doped silicate-phosphor luminescent-down-shifting layer

Thin solid films, 2018-08, Vol.660, p.651-656

2018

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Enhancing the Brightness of GaN Light-Emitting Diodes by Manipulating the Illumination Direction in the Photoelectrochemical Process

IEEE photonics technology letters, 2010-11, Vol.22 (22), p.1653-1655

2010

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Elimination of Burn-in Effect in Metal–Organic Chemical Vapor Deposition Grown InGaP/GaAs Heterojunction Bipolar Transistors by Multistep In situ Annealing

Japanese Journal of Applied Physics, 2008-01, Vol.47 (1R), p.51

Shiao, Hung-Pin

2008

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Improved the current matching of the middle-cell current-limited triple-junction GaAs/Ge solar cells after epitaxial grown using matrix profile TiO2 layer and indium nanoparticles plasmonics

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2086-2088

2013

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Current matched improving of triple-junctions GaAs-Based solar cell using periodic patterns incorporated with indium nanoparticle plasmonics

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013, p.511-513

2013

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Performance improvement of triple-junctions GaAs-based solar cell using SiO2-nanopillars/SiO2/TiO2 graded-index anti-reflection coating

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013, p.452-454

2013

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Thermal Annealing Effects Study on Electrical and Structural Properties for Ni-Au/n-GaN Schottky Contacts

Applied Mechanics and Materials, 2013-01, Vol.284-287, p.241-244

2013

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Wide temperature operational range of a 1310 nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coating

Solid-state electronics, 2009-09, Vol.53 (9), p.940-943

2009

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Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2005-08, Vol.44 (8R), p.5909

2005

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AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors

Solid-state electronics, 2006-02, Vol.50 (2), p.125-128

Shiao, Hung-Pin

2006

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Efficiency Increasing of Single-Junction GaAs Solar Cells Coated with Species of NIR Up-Conversion Phosphors Layer on Front-Side Surface by Spin-On Film Deposition

2018 Conference on Lasers and Electro-Optics (CLEO), 2018, p.1-2

2018

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Realization of High-power DFB Lasers with Single and Multiple Partially Corrugated Gratings

2023 28th Microoptics Conference (MOC), 2023, p.1-2

2023

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High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

IEEE photonics technology letters, 1997-05, Vol.9 (5), p.660-662

1997

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Growth and Performance Study of Aluminum-Free InGaAs/GaAs/InGaAsP Strained Quantum-Well Pump Lasers

Japanese Journal of Applied Physics, 2001, Vol.40 (11R), p.6384-6390

2001

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Fabrication of plasmonics Si solar cells based on indium nanoparticles and TiO2 space layer

2013 International Symposium on Next-Generation Electronics, 2013, p.417-419

2013

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Novel binary buffer layers for applications in the heteroepitaxy of highly mismatched In0.53Ga0.47As epilayers grown on GaAs substrates

Applied physics letters, 1993-10, Vol.63 (17), p.2417-2419

1993

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The Spectral Conversion Layer Incorporated with Species of LDS and UC Phosphors on Single-Junction GaAs Solar Cells to Enhance Photovoltaic Performance

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, p.2886-2889

2018

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The Spectral Conversion Layer Incorporated with Species of LDS and UC Phosphors on Single-Junction GaAs Solar Cells to Enhance Photovoltaic Performance

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018, p.2890-2893

2018

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Electrical and optical characterization of thermally deposited indium-tin-oxide film on high efficiency single-junction GaAs solar cell

2017 International Conference on Applied System Innovation (ICASI), 2017, p.1805-1807

2017

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Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2000, Vol.208 (1), p.137-144

2000

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The InxGa1−xAsyP1−y (0.53<x<1,0<y<1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy

Journal of crystal growth, 1992-10, Vol.123 (3-4), p.451-458

1992

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Low threshold 1.5 μm quantum well lasers with continuous linear-graded-index InGaAsP layers prepared by organometallic vapor-phase epitaxy

Applied physics letters, 1993-03, Vol.62 (11), p.1239-1241

1993

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Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals

Solid-state electronics, 1997, Vol.41 (1), p.1-5

1997

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Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors

Efficiency enhancement of single-junction GaAs solar cells coated with europium-doped silicate-phosphor luminescent-down-shifting layer

Enhancing the Brightness of GaN Light-Emitting Diodes by Manipulating the Illumination Direction in the Photoelectrochemical Process

Elimination of Burn-in Effect in Metal–Organic Chemical Vapor Deposition Grown InGaP/GaAs Heterojunction Bipolar Transistors by Multistep In situ Annealing

Improved the current matching of the middle-cell current-limited triple-junction GaAs/Ge solar cells after epitaxial grown using matrix profile TiO2 layer and indium nanoparticles plasmonics

Current matched improving of triple-junctions GaAs-Based solar cell using periodic patterns incorporated with indium nanoparticle plasmonics

Performance improvement of triple-junctions GaAs-based solar cell using SiO2-nanopillars/SiO2/TiO2 graded-index anti-reflection coating

Thermal Annealing Effects Study on Electrical and Structural Properties for Ni-Au/n-GaN Schottky Contacts

Wide temperature operational range of a 1310 nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coating

Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition

AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors

Efficiency Increasing of Single-Junction GaAs Solar Cells Coated with Species of NIR Up-Conversion Phosphors Layer on Front-Side Surface by Spin-On Film Deposition

Realization of High-power DFB Lasers with Single and Multiple Partially Corrugated Gratings

High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

Growth and Performance Study of Aluminum-Free InGaAs/GaAs/InGaAsP Strained Quantum-Well Pump Lasers

Fabrication of plasmonics Si solar cells based on indium nanoparticles and TiO2 space layer

Novel binary buffer layers for applications in the heteroepitaxy of highly mismatched In0.53Ga0.47As epilayers grown on GaAs substrates

The Spectral Conversion Layer Incorporated with Species of LDS and UC Phosphors on Single-Junction GaAs Solar Cells to Enhance Photovoltaic Performance

The Spectral Conversion Layer Incorporated with Species of LDS and UC Phosphors on Single-Junction GaAs Solar Cells to Enhance Photovoltaic Performance

Electrical and optical characterization of thermally deposited indium-tin-oxide film on high efficiency single-junction GaAs solar cell

Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition

The InxGa1−xAsyP1−y (0.53<x<1,0<y<1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy

Low threshold 1.5 μm quantum well lasers with continuous linear-graded-index InGaAsP layers prepared by organometallic vapor-phase epitaxy

Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals

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