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Thermal Resistance Measurement of Edge-Emitting Semiconductor Lasers Using Spontaneous Emission Spectra

Semiconductors (Woodbury, N.Y.), 2023-06, Vol.57 (6), p.310-315

2023

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Information Encoding Using Two-Level Generation in a Quantum Dot Laser

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S219-S221

2023

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Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide

Semiconductors (Woodbury, N.Y.), 2022-04, Vol.56 (4), p.246-252

2022

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Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (12), p.539-542

2023

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Virtual cavity in distributed Bragg reflectors

Optics express, 2018-09, Vol.26 (19), p.25280-25292

2018

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Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (13), p.604-610

2023

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The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures

Semiconductors (Woodbury, N.Y.), 2023-11, Vol.57 (11), p.492-498

2023

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Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S196-S199

2023

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Internal Loss in Diode Lasers with Quantum Well-Dots

Semiconductors (Woodbury, N.Y.), 2023-11, Vol.57 (11), p.513-518

2023

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Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.333-340

2021

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Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.200-204

2019

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Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1462-1467

2018

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Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Applied physics letters, 2014-11, Vol.105 (18)

2014

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InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (12), p.1699-1704

2019

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Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots

Technical physics letters, 2019-10, Vol.45 (10), p.994-996

2019

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Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1311-1316

2018

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Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region

Technical physics letters, 2018-08, Vol.44 (8), p.675-677

2018

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Investigation of the Modified Structure of a Quantum Cascade Laser

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.126-130

2018

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Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures

Technical physics letters, 2019-06, Vol.45 (6), p.549-552

2019

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Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges

Technical physics letters, 2019-02, Vol.45 (2), p.163-166

2019

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Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers

Optics letters, 2024-11, Vol.49 (21), p.6213

2024

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On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1412-1415

2016

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Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

Semiconductors (Woodbury, N.Y.), 2015-08, Vol.49 (8), p.1090-1094

2015

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MBE-grown metamorphic lasers for applications at telecom wavelengths

Journal of crystal growth, 2007-04, Vol.301, p.914-922

2007

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Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates

Optics express, 2018-05, Vol.26 (11), p.13985-13994

2018

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Thermal Resistance Measurement of Edge-Emitting Semiconductor Lasers Using Spontaneous Emission Spectra

Information Encoding Using Two-Level Generation in a Quantum Dot Laser

Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide

Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots

Virtual cavity in distributed Bragg reflectors

Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers

The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures

Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers

Internal Loss in Diode Lasers with Quantum Well-Dots

Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots

Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots

Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region

Investigation of the Modified Structure of a Quantum Cascade Laser

Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures

Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges

Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers

On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

MBE-grown metamorphic lasers for applications at telecom wavelengths

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates

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