UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Experimental and Theoretical Demonstration of Temperature Limitation for 4H-SiC MOSFET During Unclamped Inductive Switching

IEEE journal of emerging and selected topics in power electronics, 2020-03, Vol.8 (1), p.206-214

2020

Volltextzugriff (PDF)

Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2327-2334

2009

Volltextzugriff (PDF)

Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode

IEEE electron device letters, 2017-08, Vol.38 (8), p.1059-1062

2017

Volltextzugriff (PDF)

Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.303-310

2016

Volltextzugriff (PDF)

Deep Learning With Grouped Features for Spatial Spectral Classification of Hyperspectral Images

IEEE geoscience and remote sensing letters, 2017-01, Vol.14 (1), p.97-101

2017

Volltextzugriff (PDF)

A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

Micromachines (Basel), 2024-04, Vol.15 (4), p.461

2024

Volltextzugriff (PDF)

A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching

Micromachines (Basel), 2023-06, Vol.14 (7), p.1282

2023

Volltextzugriff (PDF)

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

IEEE access, 2019, Vol.7, p.28592-28596

2019

Volltextzugriff (PDF)

Design of GeSn-Based Heterojunction-Enhanced N-Channel Tunneling FET With Improved Subthreshold Swing and ON-State Current

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1262-1268

2015

Volltextzugriff (PDF)

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

Materials, 2023-02, Vol.16 (4), p.1484

2023

Volltextzugriff (PDF)

The Influence of Special Environments on SiC MOSFETs

Materials, 2023-09, Vol.16 (18), p.6193

2023

Volltextzugriff (PDF)

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Results in physics, 2023-10, Vol.53, p.107022, Article 107022

2023

Volltextzugriff (PDF)

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Micromachines (Basel), 2022-02, Vol.13 (2), p.248

2022

Volltextzugriff (PDF)

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n - /n + -Buffer Layer

Micromachines (Basel), 2022-12, Vol.13 (12), p.2193

2022

Volltextzugriff (PDF)

A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.300-305

2021

Volltextzugriff (PDF)

Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.146-151

2022

Volltextzugriff (PDF)

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Results in physics, 2021-10, Vol.29, p.104768, Article 104768

2021

Volltextzugriff (PDF)

A Linear 126-dB Dynamic Range Light-to-Frequency Converter With Dark Current Suppression Upto 125 °C for Blood Oxygen Concentration Detection

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3983-3988

2016

Volltextzugriff (PDF)

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Micromachines (Basel), 2024-05, Vol.15 (6), p.684

2024

Volltextzugriff (PDF)

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.197-202

2022

Volltextzugriff (PDF)

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

Micromachines (Basel), 2022-10, Vol.13 (10), p.1741

2022

Volltextzugriff (PDF)

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Micromachines (Basel), 2022-03, Vol.13 (3), p.464

2022

Volltextzugriff (PDF)

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Micromachines (Basel), 2023-05, Vol.14 (5), p.1074

2023

Volltextzugriff (PDF)

Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1335-1338

2020

Volltextzugriff (PDF)

Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

Micromachines (Basel), 2023-03, Vol.14 (3), p.688

2023

Volltextzugriff (PDF)

1 – 25 von 259

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(205)
Mit Volltextzugriff
(222)

Publikationsform

Artikel
(227)
Tagungsberichte
(32)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(182)
Technology
(130)
Engineering
(87)
Physical Sciences
(87)
Engineering, Electrical & Electronic
(76)
Physics
(74)
Physics, Applied
(57)
Breakdown Voltage
(37)
Voltage
(35)
Life Sciences & Biomedicine
(34)
Electric Fields
(32)
Logic Gates
(32)
Materials Science
(29)
Electric Potential
(27)
Materials Science, Multidisciplinary
(27)
Mosfet
(27)
Mosfets
(26)
Semiconductor Devices
(25)
Chemistry
(23)
Science & Technology - Other Topics
(23)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(9)

Menü

Weitere Dienste

Einstellungen

Experimental and Theoretical Demonstration of Temperature Limitation for 4H-SiC MOSFET During Unclamped Inductive Switching

Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator

Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode

Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET

Deep Learning With Grouped Features for Spatial Spectral Classification of Hyperspectral Images

A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

Design of GeSn-Based Heterojunction-Enhanced N-Channel Tunneling FET With Improved Subthreshold Swing and ON-State Current

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

The Influence of Special Environments on SiC MOSFETs

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n - /n + -Buffer Layer

A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery

Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

A Linear 126-dB Dynamic Range Light-to-Frequency Converter With Dark Current Suppression Upto 125 °C for Blood Oxygen Concentration Detection

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect

Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

Suchergebnisse filtern